Xilinx Reliability Monitor Report - Quarter 4 CY 2001

Jan. 1, 2002 

P. 1 

The 

Reliability Data 

Program 

Expanded Version

Jan. 1, 2002 

P. 2 

TABLE OF CONTENTS 

Introduction ............................................................................................................................................…4 

The Reliability Program........... .................................................................................................................…4 

New Process Qualification....................................................................................................……… 5 

New Package Qualifications............................................................................................................…6 

New Device Qualification………………………………...…………………………………………………7 

Reliability Monitor.............................................................................................................................….6 

Process Monitor....................................................................................................................…...7 

Assembly Package Monitor.....................................................................................................…8 

Process Technology Family......................................................................................................................….9 

Failure Analysis......................................................................................................................................…..10 

Failure Rate Determination............…………...........................................................................…….…10 

Table I Failure Analysis Acronyms.................….................................................…………...........…….11

Jan. 1, 2002 

P. 3 

TABLE OF CONTENTS 

Continued 

Plastic Encapsulant Data............................…..........................................................................................12 

Typical IR-Reflow Profile.......…...............…..............................................................................................13 

Product Moisture Classification...….….………………………………………………………………………….14 

ESD & Latch-up Data...….................................................................................................................. 15 - 17 

The FPGA Products...….…..........................................................................................................…18 - 97 

The Coolrunner Products……...................................................................................................…. 98 - 115 

The CPLD and EPROM Products..….........................................................................................…116 - 171 

Package Qualification & Monitor...............................................................................................….172 - 207 

Plastic Package Qualification Test Data ......................…............................................................. 172 - 203 

Ceramic Package Qualification Test Data ..…............................................................................…204- 207 

Solderability Test Qualification per EIAJ ..............…..................................................................…208 - 213 

Low Temperature Soldering Test....….........................................................................................…214 -215 

Board Level Reliability Tests….......….........................................................................................…216 -222

1. This reliability report is published by Xilinx to provide insight to our customers regarding the reliability of Xilinx products. 

Reliability is defined as product performance to specification over time in response to varied (specified) environmental 

stress. The ultimate goal of our reliability program is to achieve continuous improvement in the robustness of the 

product being evaluated. 

Jan. 1, 2002 

P. 4 

As part of this program, finished product reliability is measured periodically to ensure that the product performance 

meets or exceeds internal and external reliability specifications. Reliability programs are executed in response to 

internal programs as well as to individual customer requirements. All testing is performed or supervised by experienced 

Xilinx employees using facilities which are approved and audited by Xilinx for compliance to the requirements of DSCC- 

VAC and MIL-STD-883 requirements. 

2. The Reliability Program: The reliability qualifications of new devices, wafer processes, and packages are designed 

to ensure that these Xilinx’s products satisfy the internal and external customer requirements before transfer into 

production. The reliability qualification and monitor requirements will be outlined as follows:

Jan. 1, 2002 

P. 5 

2.1 Wafer Process Qualification 

Reliability Test Condition Duration 

High Temperature 

Operating Life (HTOL) 

Temperature Humidity 

Bias (THB) or 

High Accelerated stress 

Test (HAST) 

Temperature Cycling 

(TC) 


Storage (HTS) C 

Data RetentionD Program EraseC,D Note: 

Ta >/=125°C, 

V DD Max 

85°C, 85% R.H., 

V DD or 

130°C, 85% R.H., 

V DD 

Lot 

Qty 

SS/lot A Acceptance 

1,000 hours 3 76 0 fail 

1,000 hours 

or 

100 hours 

2 76 0 fail 

-65°C/+150°C or 

-55°C/+125°C B 

500 cycles or 1 76 0 fail 

1,000 cycles 

Ta = 150°C 1,000 hours 1 76 0 fail 

Ta = 150°C 1,000 hours 1 76 0 fail 

Ta = 75°C 10,000 cycles 1 76 0 fail 

A. The sample size listed is based on the die size

Jan. 1, 2002 

P. 6 

2.2 Non-Hermetic Package/Assembly Qualification: 



Bias (THB) or 


Test (HAST) 


(TC) B 

85°C, 85% R.H., 

V DD or 

130°C, 85% R.H., 

V DD 

-65°C/+150°C, 

-55°C/+125°C, 

-40°C/+125°C or 

-0°C/+100°C 

121°C, 100% R.H.or 

1,000 hours 

or 

100 hours 

500 cycles 

or 

1,000 

cycles 

Lot 

Qty 

SS/lot A Acceptance 

1 76 0 fail 

1 76 0 fail 

Autoclave or 

96 hours 1 76 0 fail 

Moisture Resistance 85°C, 85% R.H 1,000 hours 

Resistance to Solvent 1 3 0 fail 

Solderability 1 3 0 fail 

Lead Fatigue 1 3 0 fail 

Ball Shear 1 5(40) C 0 fail 

Bond Pull 1 5 (40) C 0 fail 

Note: 


Jan. 1, 2002 

P. 7 

2.3 Device Qualification: 

For a new device from a previously qualified process, the requirements are as follows: 

Reliability Test Condition Lot Qty SS/lot A Acceptance 

ESD HBM 1 3 >/=2000V 

Latch up Current injection 

Ta =25°C 

1 4 >/=200mA 

2.4 Hermetic Packages: The hermetic package qualification requires a full group D 

test per MIL-STD-883, Method 5005. 

2.5 Reliability Monitor 

2.5.1 Wafer Process 



Operating Life (HTOL) 

Data Retention A 

Extended Static Life 

Test 

Ta >/=125°C 

VDD Max 

A- For CPLD and Eprom products only. 

B. One lot is pulled per quarter to extend to 2,000 hours. 

Lot 

Qty 

SS/ process 

family/quarter 

1,000 hours 1 45 0 fail 

Ta=150C 1,000 hours 1 45 0 fail 

Ta >/=125°C 

VDD Max 

2,000 hours 1 B 

45 0 fail 

Acceptance

Jan. 1, 2002 

P. 8 

2.5 Reliability Monitor (cont’d) 

2.5.2 Package/ Assembly (Monitor) 



Bias (THB) or 


Test (HAST) 


(TC) B 

Lot 

Qty 

SS/ site /pkg 

family/quarter 

85°C, 85% R.H., V DD 1,000 hours 1 45 0 fail 

130°C, 85% R.H., 

VDD 

-65°C/+150°C , 

-55°C/+125°C, 

-40°C/+125°C or 

-0°C/+100°C 

121°C, 100% R.H. or 


500 cycles 

or 

1,000 cycles 

1 45 0 fail 

Autoclave or 


Moisture Resistance 85°C, 85% R.H., 1,000 hours 

Solderability 1 3 0 fail 

Mark Permanency 1 3 0 fail 

Lead Fatigue 1 3 0 fail 

Physical Dimension 1 5 0 fail 

Note: 

Acceptance 


Jan. 1, 2002 

4. Failure Analysis: At Xilinx analysis is performed on all Qualification stress test failures, with the 

appropriate failure mechanism identified. Each failure analysis is analyzed and categorized in accordance 

with the failure mechanism. (Table I) 

P. 9 

3. Process Technology Family 

Process Technology Device 

0.15 um XC2VXXX 

0.18 /0.15 um XCVXXXEA 

0.18 um XCVXXXE 

0.22 / 0.18 um XC2SXXX, XCVXXXA 

0.22 um XCVXXX 

0.25 um XC4XXXXL/XLA, XCSXXXL 

0.35 um XC17VXX (Eprom), XC18VXX (Flash) 

0.35 um XC4XXXXL, XCSXX, XC95XXXL (Flash) 

0.5 um XC4XXXE/EX, XC95XXX 

0.6 um XC17XXX/L/E (Eprom), XC4XXX/L/E

Jan. 1, 2002 

P. 10 

5. Failure Rate Determination 

The failure rate is typically defined in unit of FIT (Failures In Time). One FIT means 1 failure per 

1billion device hours. For example, 5 fails expected out of 1 million components operating for 1000 

hours will have failure rate of 5 FIT. The following is the failure rate calculation method: 

Failure Rate = 

c 2 10 9 

2(No. of dev.)(No. of hrs.) (acc. Factor) 

Where c² = Chi-squared value at a desired confidence level and (2f + 2) degrees of 

freedom, where f is the number of failures. 

The acceleration factor is calculated using the Arrhenius relationship 

A = exp { Ea/k (1/Tj 2 -1/Tj 1) } 

Ea = Thermal activation energy (0.7ev is assumed and used in failure rate calculation) 

A = Acceleration factor 

k = Boltzman's constant, 8.617164 x 10 -5 ev/ o K 

Tj 1 = Use junction temperature in degrees Kelvin (°K =°C + 273.16) 

Tj 2 = Stress junction temperature in degrees Kelvin (°K =°C + 273.16)

Jan. 1, 2002 P. 11 

F/A ACRONYM 

DESCRIPTION 

ASL Lifted Ball Bond 

FANC Failure Analysis not 

completed 

MST Moisture in package 

TABLE I 

MARG Marginal parametric failure 

NDF No Defect found 

PFSM Particle found in 2 Metal 

causing short 

GAOD Gate Oxide defect 

MSKD Masking Defect 

F/A ACRONYM 

DESCRIPTION 

CMGL Fine Leak at seal glass 

between Ceramic material 

glass. 

INC Inconclusive 

RAND Random defect 

VCMD Via contact to metal 

defect 

VUO Via opened 

CRCP Cracked in Passivation 

PSD Package Substrate 

defect

Volume Resistivity (Ohm.cm) 150C 

Jan. 1, 2002 P. 12 

Plastic Encapsulant Data (Typical) 

Test Conditions 6300HS 7320C 7304 MP8000CH4 

Water Absorption ) Boil 48 hrs (wt%) 0.3/24 hrs 0.22/24 hrs 0.25/24 hrs 0.3/48 hrs 

Spiral Flow (cm) 80 180 125 90cm 

Ionic Impurities 

160C x 23 hrs Extraction 

Na+ (ppm)

Temperature (C o ) 

XILINX Typical Convection Oven Reflow 

Jan. 1, 2002 P. 13 

1 

1 

220 - 225 o C 

≅ 10-40 sec max 

1 Transition rate 4 - 5 o C/s 

Preheat and drying dwell 

120 s max between 

100o - 150o 2 

C 

2 Dwell is intended for partial dryout 

3 

Ramp down 

1 - 4 o C/s 

These Guidelines are for reference. It is recommended that actual 

packages with known loads be checked with the commercial 

equipment prior to engaging in mass production. 

100 200 300 400 500 

Time (seconds) 

Dwell 60-120 s @ >/= 183 o C

Jan. 1, 2002 P. 14 

Product Moisture Classification 

PLCC (20, 44) 

PLCC (68) 

Note : Classification is per J-STD-020 

ALL Level 1 / Unlimited 

90% Level 1 / Unlimited 

10% Level 3 

PLCC 84 ALL 30% Level 1 / Unlimited 

70% Level 3 / 168 hours 

PQFP (44, 100, 160, 208, 240) ALL Level 3 / 168 hours 

TQFP (44, 100, 144, 176) ALL Level 3 / 168 hours 

HQFP (160, 208, 240, 304) ALL Level 3 / 168 hours 

VQFP (44, 64, 100) ALL Level 3 / 168 hours 

HTQFP (144, 176, 208) ALL Level 3 / 168 hours 

PPGA (132, 175) ALL Level 1 / Unlimited 

CS (48, 144, 280) ALL Level 3 / 168 hours 

CP (56) XCR3064A/L Level 3 / 168 hours 

MQFP (208, 240) ALL Level 1 / Unlimited 

BGA (225, 256) ALL Level 3 / 168 hours 

SBGA (352, 432, 560, 728) ALL Level 3 / 168 hours 

SBGA (560) ALL Level 3 / 168 hours 

FFBGA (896,957,1152,1517) 

BG388 

FBGA (256, 456, 556, 676, 

680, 900, 860, 1156) 

XC2VXXX 

Level 4/96 4 / 96 hours 

XCCACEM16 

ALL Level 3 / 168 hours 

®

Jan. 1, 2002 P. 15 

ESD and Latch-up Data 

Device Latch-Up Human Body Model Charge Device Model 

XC17XXD/L +/- 300 mA +2000V to +4000V +2000V (1) 

XC17XXE, XC17SXX +/- 300 mA +2000V to +4000V +1000V (8) 

XC18VXX +/- 250 mA +2000V +500V (9) 

XC31XX/A +/- 250 mA +1750V to +8000V +1000V (3) 

XC3XXX/A +/- 220 mA +4000V to +7000V +2000V (2) 

XC4XXX/A +/- 300 mA +1000V to +8000V +2000V (4) 

XC4XXXE +/- 250 mA +3000V to +8000V +2000V (5) 

XC4XXXEX +/- 250 mA +3000V to +7000V +2000V (6) 

XC4XXXXL +/- 250 mA +2000V to +8000V +1000V (7) 

XC4XXXXLA +/- 260 mA +2000V to +7000V +500V(Core)/ +1000V(corner)(10) 

®

Jan. 1, 2002 P. 16 

ESD and Latch-up Data 

Device Latch-Up Human Body Model Charge Device Model 

XCVXXXX +/- 200 mA +1000V to +1800V +500V (11) 

XCVXXXE +/- 210 mA +1000V to +2500V(23) +300V (12) 

XCVXXXEA +/- 210 mA +2000V to +3000V +500V (13) 

XCSXX +/- 310 mA +6000V +1000V (14) 

XCSXXXL +/- 250 mA +3000V +500V (15) 

XC2SXXX +/- 210 mA +2000V +500V (16)(17) 

XC5XXX +/- 250 mA +3000V to +7000V +2000V (18) 

XC95XXX +/- 250 mA +2000V to +4000V +1000V (19) 

XC95XXXL +/- 350 mA +2000V to +4000V +1000V (20) 

XCRXXX +/- 210 mA +2000V to +4000V +500V (21) 

XC2VXXX(22) +/- 200 mA +1500V to +2000V(23) +500V 

®

(1) Measured on XC1765D 

(2) Measured on XC3090 

(3) Measured on XC3190/A 


(5) Measured on XC4005E 

(6) Measured on XC4010E 

(7) Measured on XC4028XL (8) Measured on XC17256E 

(9) measured on XC18V04 

(10) Measured on XC4062XLA 

(11)Measured on XCV800 

(12)Measured on XCV50E 

(13)Measured on XCV2600EA, XCV3200EA 

(14) Measured on XCS10 & XCS30 

(15) Measured on XCS30XL 

(16) Measured on XC2S200 

(17)Measured on XC2S150 


Jan. 1, 2002 P. 17 


(20)Measured on XC9536XL 

(21)Measured on XCR3064 

(22)Based on the data collected on XC2V1000, XC2V6000 & XC2V4000. As other devices’ data available, this 

will be updated in the future.For HBM, only XC2V4000 device has ESD threshold below 2KV (passing at 1.5KV) 

(23)Only XCV100E and XCV812E have ESD threshold below 2KV, (XCV100E passed at 1.5KV and XCV812E 

passed at 1KV), 

(24) Both ESD & Latch-up tests performed @ Room temperature. 

(25) ESD results do not include Dxn & Dxp pins 

®

Jan. 1, 2002 P.18 

The following data was collected from regular qualification and monitor data 

Majority of the data was collected from the latest 2 years. 

The 

FPGA 

Products

Jan. 1, 2002 

P.19 

Failure Rate Summary 

Process Technology family Device hours @125 o C FIT1 

0.15 um 1,021,490 12 

0.18/0.15 um 190,084 62 

0.18 um 1,784,895 22 

0.22/0.18 um 2,164,364 5 

0.22 um 996,166 26 

0.25 um 1,875,994 6 

0.35 um (Eprom) 1,651,598 51 

0.35 um 3,747,783 3 

0.5 um 1,149,790 10 

0.6 um (Eprom) 1,886,970 13 

0.6 um 480,228 25 

Note: 1. FIT is calculated base on 0.7 ev (0.58 ev for EPROM), 60% C.L. and Tj of 55 o C 

2. The data were collected through latest 2 years of reliability qualification & 

monitoring program. 

®

Combined Lots: 

Failures: 

Device on test: 

Actual device hours: 

Average Test Time : 

Equivalent device hours @ Tj=125C: 



Failure Rate(60% C.L.) in FITS @ Tj=55C: 


Jan. 1, 2002 P.20 

Reliability Testing Summary 

High Temperature Life Test 

Qualification & Monitor Combined 

Technology: 

Device Type: 

Package Type: 

Actual Temperature 

Assumed Activation Energy: 

Confidence Level: 

Si Gate CMOS 

XC4XXX, XC4XXXE, XC4XXXEX, XC4XXXXL 

Various 

145C 

0.70 ev 

60% 

XC4XXX XC4XXXE XC4XXXEX XC4XXXXL 

3 

0 

131 

97,334 

743 

258,372 

20,107,237 

2.43E+08 

46 

4 

6 

0 

266 

163,487 

615 

433,974 

33,773,109 

4.08E+08 

27 

2 

3 

0 

128 

135,335 

1,057 

359,245 

27,957,475 

3.38E+08 

33 

3 

13 

0 

574 

440,733 

768 

1,169,919 

91,046,527 

1.10E+09 

10 

1 

®


Failures: 









Jan. 1, 2002 P.21 




Technology: 

Device Type: 

Package Type: 

Actual Junction Temperature: 


Confidence level: 

Si Gate CMOS 

XC4XXX, XC4XXXXLA, XCSXX, 

Various 

145C 

0.70 ev 

60% 

XC4XXXXL XC4XXXXLA XCSXX 

dynamic 

1 

0 

43 

152,908 

3,556 

405,892 

31,587,701 

3.82E+08 

29 

2 

8 

0 

362 

334,304 

923 

887,397 

65,059,828 

8.35E+09 

13 

1 

4 

0 

168 

1687,924 

1,006 

448,406 

34,896,283 

4.22E+08 

26 

2 

®


Failures: 









Jan. 1, 2002P.22 




Technology: 

Device Type: 

Package Type: 

Actual Temperature: 


Si Gate CMOS 

XCSXXXL, XC2SXXX, XCVXXX 

Various 

145C, 125C 

0.70 ev @ C.L. = 60% 

XCSXXXL XC2SXXX XCVXXX 

7 

0 

298 

315,393 

1,058 

837,206 

65,153,817 

7.88E+08 

14 

1 

16 

0 

1,025 

815,361 

795 

2,164,364 

168,437,098 

2.04E+09 

5 

1 

12 

1 

488 

392,297 

804 

996,166 

77,524,536 

9.37E+08 

26 

2 

®


Failures: 









Jan. 1, 2002 

P.23 




Technology: 

Device Type: 

Package Type: 



Si Gate CMOS 

XCVXXX, XCVXXXE, XCVXXXEA, XC2VXXX 

Various 

145C, 125C 

0.70 ev @ C.L. = 60% 

XCVXXX XCVXXXE XCVXXXEA XC2VXXX 

Dynamic 

15 

2 

642 

617,543 

962 

1,594,078 

124,055,806 

1.50E+09 

25 

2 

21 

2 

879 

672,407 

765 

1,409,012 

109,653,418 

1.33E+09 

28 

2 

4 

0 

111 

92,536 

834 

190,084 

14,792,926 

1.79E+08 

62 

5 

13 

0 

405 

411,624 

1,016 

1,017,639 

79,195,628 

9.58E+08 

12 

1 

®


Failures: 







Jan. 1, 2002 

P.24 




Technology: 

Device Type: 

Package Type: 




0.6um Si Gate CMOS 

XC4XXX 

PGA- 223, PQFP-208 

145C 

0.70 ev 

60% 

XC4010/L XC4013 XC4XXX 

2 

0 

84 

85,302 

1,016 

226,433 

17,621,669 

2.13E+08 

1 

0 

47 

12,032 

256 

31,939 

2,485,568 

3.01E+07 

Failure Rate (60% C.L.) in FITS @ Tj=55C: 


3 

0 

131 

97,334 

743 

258,372 

20,107,237 

2.43E+08 

46 

4 

®


Failures: 







Jan. 1, 2002 

P.25 

Failure Analysis: 




Technology: 

Device Type: 

Package Type: 




XC4005E XC4010E XC4013E 

2 

0 

89 

54,116 

608 

143,650 

11,179,272 

1.35E+08 

0.5um, 0.6 um SiGate CMOS 

XC4XXXE 

PGA-156, 191, 223, 299, PQFP-208,240, HQFP-240 

145C 

0.70 ev 

60% 

1 

0 

47 

12,032 

256 

31,939 

2,485,568 

3.01E+07 

1 

0 

42 

44,184 

1,052 

117,286 

9,127,521 

1.10E+08 

®


Failures: 







Jan. 1, 2002 

P.26 




Technology: 

Device Type: 

Package Type: 




XC4020E XC4025E XC4XXXE 

1 

0 

41 

41,123 

1,003 

109,160 

8,495,180 

1.03E+08 


XC4XXXE 

PGA-156, 191, 299, PQFP-208, HQFP-240 

145C 

0.70 ev 

60% 

1 

0 

47 

12,032 

256 

31,939 

2,485,568 

3.01E+07 



6 

0 

266 

163,487 

615 

433,974 

33,773,109 

4.08E+08 

27 

2 

®


Failures: 








Jan. 1, 2002 

P.27 


High Temperature Operating Life 


Technology: 

Device Type: 

Package Type: 





XC4XXXEX 

HQFP-240, 208 

145C 

0.70 ev 

60% 

XC4028EX XC4036EX XC4XXXEX 

2 

0 

86 

93,335 

1,085 

247,756 

19,281,124 

2.33E+08 

1 

0 

42 

42,000 

1,000 

111,488 

8,676,351 

1.05E+08 



3 

0 

128 

135,335 

1,057 

359,245 

27,957,475 

3.38E+08 

33 

3 

®

Jan. 1, 2002 


Failures: 







P.28 




Technology: 

Device Type: 

Package Type: 




XC4010XL XC4013XL XC4020XL XC4028XL 

1 

0 

45 

45,945 

1,021 

121,960 

9,491,308 

1.15E+08 

0.25um, 0.35um SiGate CMOS 

XC4XXXXL 

PLCC-84, PQFP-208, HQFP-208,240, CB-228, PG-475 

145C 

0.70 ev 

60% 

3 

0 

140 

105,437 

753 

279,881 

21,781,153 

2.63E+08 

1 

0 

45 

45,000 

1,000 

119,452 

9,296,090 

1.12E+08 

4 

0 

167 

157,801 

945 

418,880 

32,598,4896 

3.94E+08 

®


Failures: 







Jan. 1, 2002 

P.29 




Technology: 

Device Type: 

Package Type: 




XC4036XL XC4062XL XC4085XL XC4XXXXL 

2 

0 

83 

62,486 

753 

165,868 

12,908,344 

1.56E+08 


XC4XXXXL 

PLCC-84, PQFP-208, HQFP-208,240, CB-228, PG-475 

145C 

0.70 ev 

60% 

1 

0 

47 

12,032 

256 

31,939 

2,485,568 

3.01E+07 

1 

0 

47 

12,032 

256 

31,939 

2,485,568 

3.01E+07 



13 

0 

574 

440,733 

768 

1,169,919 

91,046,527 

1.10E+09 

10 

1 

®


Failures: 







Jan. 1, 2002 

P.30 




Technology: 

Device Type: 

Package Type: 





XC4XXXXL 

PLCC-84 

145C 

0.70 ev 

60% 

XC4005XL XC4XXXXL 

( Dynamic) 

1 

0 

43 

152,908 

3,556 

405,892 

31,587,701 

3.82E+08 



1 

0 

43 

152,908 

3,556 

405,892 

31,587,701 

3.82E+08 

29 

2 

®


Failures: 







Jan. 1, 2002 

P.31 




Technology: 

Device Type: 

Package Type: 



confidence Level: 

XC4013XLA XC4020XLA XC4044XLA 

1 

0 

41 

42,272 

1,042 

113,405 

8,825,501 

1.07E+08 


XC4XXXXLA 

PQFP-240, HQFP-240 

145C 

0.70 ev 

60% 

1 

0 

41 

41,082 

1,002 

109,052 

8,486,711 

1.03E+08 

2 

0 

90 

54,384 

604 

114,362 

11,234,635 

1.36E+08 

®


Failures: 







Jan. 1, 2002 

P.32 




Technology: 

Device Type: 

Package Type: 



confidence Level: 


XC4XXXXLA 

PQFP-240, HQFP-240 

145C 

0.70 ev 

60% 

XC4062XLA XC4085XLA XC40XXXLA 

3 

0 

149 

165,609 

1,111 

439,607 

34,211,471 

4.14E+08 

1 

0 

41 

41,000 

1,000 

108,834 

8,469,771 

1.02E+08 

8 

0 

362 

334,304 

923 

887,397 

65,059,828 

8.35E+08 

Failure Rate (60% C.L.) in FITS @ Tj=55C: 13 


®


Failures: 







Jan. 1, 2002 

P.33 




Technology: 

Device Type: 

Package Type: 




XCS20 XCS30 XCS40 XCSXX 

2 

0 

84 

84,840 

1,017 

113,384 

8,823,849 

1.07E+08 


XCSXX 

PQFP-208 

145C 

0.70 ev 

60% 

1 

0 

42 

42,084 

1,002 

111,711 

8,693,704 

1.05E+08 

1 

0 

42 

42,000 

1,000 

111,488 

8,676,351 

1.05E+08 



4 

0 

168 

168,924 

1,006 

448,406 

34,896,283 

4.22E+08 

26 

2 

®


Failures: 







Jan. 1, 2002 

P.34 




Technology: 

Device Type: 

Package Type: 




XCS05XL XCS10XL XCS20XL 

1 

0 

45 

50,715 

1,127 

134,622 

10,476,694 

1.27E+08 


XCSXXXL Microcircuit Group 

PQFP-208, PLCC-84 

145C 

0.70 ev 

60% 

1 

0 

44 

49,588 

1,127 

131,631 

10,243,878 

1.24E+08 

1 

0 

42 

42,000 

1,000 

111,488 

8,676,351 

1.05E+08 

®


Failures: 







Jan. 1, 2002 

P.35 




Technology: 

Device Type: 

Package Type: 





XCSXXXL 


145C 

0.70 ev 

60% 

XCS30XL XCS40XL XCSXXXL 

1 

0 

42 

43,050 

1,025 

114,276 

8,893,260 

1.08E+08 

3 

0 

125 

130,040 

1,040 

345,189 

26,863,635 

3.25E+08 



7 

0 

298 

315,393 

1,058 

837,206 

65,153,817 

7.88E+08 

14 

1 

®


Failures: 







Jan. 1, 2002 

P.36 




Technology: 

Device Type: 

Package Type: 




XC2S15 XC2S30 XC2S50 XC2S100 

1 

0 

76 

76,532 

1,007 

203,153 

15,809,964 

1.91E+08 

0.22/0.18um Si Gate CMOS 

XC2SXXX 

PQFP-208, 240 

145C 

0.70 ev 

60% 

1 

0 

76 

35,720 

470 

94,818 

7,379,030 

8.92E+07 

2 

0 

152 

154,736 

1,018 

410,744 

31,965,329 

3.86E+08 

2 

0 

152 

91,428 

602 

242,694 

18,887,176 

2.28E+08 

®


Failures: 







Jan. 1, 2002 

P.37 




Technology: 

Device Type: 

Package Type: 





XC2SXXX 

PQFP-208, 240 

145C 

0.70 ev 

60% 

XC2S150 XC2S200 XC2SXXX 

9 

0 

493 

418,945 

850 

1,112,083 

86,545,567 

1.05E+09 

1 

0 

76 

57,836 

761 

153,525 

11,947,748 

1.44E+08 



16 

0 

1,025 

815,361 

795 

2,164,364 

168,437,098 

2.04E+09 

5 

1 

®


Failures: 







Jan. 1, 2002 

P.38 




Qualification 

Technology: 

Device Type: 

Package Type: 

Actual Temperature 



XCV200 XCV300 XCV400 XCV600 

1 

0 

75 

57,600 

768 

152,898 

11,898,995 

1.44E+08 


XCVXXX 

HQFP-240, PQFP-240, *BG560, CB-228 

145C, 125C* 

0.70 ev 

60% 

5 

1 

285 

280,710 

985 

745,141 

57,989,011 

7.01E+08 

FA00072(1)-RAND 

1 

0 

76 

45,904 

604 

121,851 

9,482,838 

1.15E+08 

1 

0 

21 

9,492 

452 

25,196 

1,960,855 

2.37E+07 

®


Failures: 







Jan. 1, 2002 

P.39 




Qualification 

Technology: 

Device Type: 

Package Type: 





XCVXXX 

HQFP-240, PQFP-240, *BG560, CB-228 

145C , 125C* 

0.70 ev 

60% 

XCV800 XCV800 XCV1000 XCVXXX 

2 

0 

48 

44,547 

928 

118,249 

9,202,510 

1.11E+08 

*1 

0 

22 

22,308 

1,014 

22,308 

1,736,073 

2.10E+07 

*1 

0 

5 

5,000 

1,000 

5,000 

389,115 

4.70E+06 



12 

1 

488 

392,297 

804 

996,166 

77,524,536 

9.37E+08 

26 

2 

®


Failures: 







Jan. 1, 2002 

P.40 





Technology: 

Device Type: 

Package Type: 




0.22 um Si Gate CMOS 

XCVXXX 

PQFP-240 

145C 

0.70 ev 

60% 

XCV300 XCVXXX 

(Dynamic) 

2 

0 

41 

41,000 

1,000 

108,834 

8,469,771 

1.02E+08 



2 

0 

41 

41,000 

1,000 

108,834 

8,469,771 

1.02E+08 

108 

9 

®


Failures: 




Equiv. device hrs @ Tj=125C: 



Jan. 1, 2002 

P.41 




Qualification 

Technology: 

Device Type: 

Package Type: 




XCV200E XCV300E XCV400E XCV600E XCV1000E 

1 

0 

76 

80,332 

1,057 

213,240 

16,594,967 

2.01E+08 

5 

1 

339 

212,014 

625 

562,788 

43,797,806 

5.30E+08 

F/A00061(1)-MSKD 


XCVXXXE 

HQFP-240, PQFP-240, BG-560 

145C , *125C 

0.70 ev 

60% 

1 

0 

41 

20,541 

501 

54,526 

4,243,355 

5.13E+07 

3 

0 

148 

113,311 

766 

300,782 

23,407,762 

2.83E+08 

1 

1 

19 

19,019 

1,001 

50,486 

3,928,941 

4.75E+07 

F/A00172(1)-GAOD 

®


Failures: 







Jan. 1, 2002 

P.42 




Qualification 

Technology: 

Device Type: 

Package Type: 





XCVXXXE 

HQFP-240, PQFP-240, BG-560 

145C , *125C 

0.70 ev 

60% 

XCV1000E XCV1600E XCV2000E XCVXXXE 

*4 

0 

127 

115,142 

907 

115,142 

8,960,686 

1.08E+08 

*3 

0 

75 

62,725 

836 

62,725 

4,881,442 

5.90E+07 

*3 

0 

54 

49,323 

913 

49,323 

3,838,459 

4.64E+07 



21 

2 

879 

672,407 

765 

1,409,012 

109,653,418 

1.33E+09 

28 

2 

®


Failures: 







Jan. 1, 2002 

P.43 




Qualification 

Technology: 

Device Type: 

Package Type: 





XCVXXXEA 

HQFP-240, BG-560 

145C , *125C 

0.70 ev 

60% 

XCV1000EA XCV1000EA XCV2000EA XCVXXXEA 

2 

0 

58 

58,960 

1,017 

156,508 

12,179,944 

1.47E+08 

*1 

0 

31 

10,850 

350 

10,850 

844,379 

1.02E+07 

*1 

0 

22 

22,726 

1,033 

22,726 

1,768,603 

2.14E+07 



4 

0 

111 

92,536 

834 

190,084 

14,792,926 

1.79E+08 

62 

5 

®


Failures: 







Jan. 1, 2002 

P.44 



Qualification 

Technology: 

Device Type: 

Package Type: 





XC2VXXX 

FG256, BF957, FF1152 

150C (dynamic) ; 125C (static) 

0.70 ev 

60% 

XC2V40 XC2V40 XC2V1000 XC2V1000 

Dynamic Static Dynamic Static 

1 

0 

38 

38,000 

1,000 

126,910 

9,876,476 

1.19E+08 

1 

0 

38 

38,000 

1,000 

38,000 

2,957,271 

3.58E+07 

3 

0 

112 

112,749 

1,007 

376,551 

29,304,284 

3.54E+08 

3 

0 

111 

114,613 

1,033 

114,613 

8,919,517 

1.08E+08 

®


Failures: 







Jan. 1, 2002 

P.45 



Qualification 

Technology: 

Device Type: 

Package Type: 





XC2VXXX 

FG256, BF957, FF1152 

150C (dynamic) ; 125C (static) 

0.70 ev 

60% 

XC2V1000 XC2V3000 XC2V6000 XC2VXXXX 

Static Dynamic Dynamic 

3 

0 

111 

114,613 

1,033 

114,613 

8,919,517 

1.08E+08 

4 

0 

96 

99,162 

1,023 

327,834 

25,513,017 

3.08E+08 

1 

0 

10 

10,100 

1,010 

33,731 

2,625,063 

3.17E+07 

13 

0 

405 

411,624 

1,016 

1,017,639 

79,195,628 

9.58E+08 

Failure Rate(60% C.L.) in FITS @ Tj=55C: 12 

Failure Rate(60% C.L.) in FITS @ Tj=25C: 1 

®

Jan. 1, 2002 

Combined Started Lot: 

Combined Completed Lots: 

P.46 

Failures: 


Mean Test Hours/Device: 

Total Device Hours: 

Reliability Testing Summary-Packages 

Bias Moisture Life 


Technology: 

Device Type: 

Package Type: 

Test Condition: 

Si Gate CMOS 

XC4XXXE, XC4XXXXL, XC4XXXXLA, XCSXX 

Various 

T=85C, R.H.=85% 

XC4XXXE XC4XXXXL XC4XXXXLA XCSXX 

2 

2 

0 

119 

1,091 

129,866 

6 

6 

0 

224 

1,059 

237,160 

3 

3 

0 

127 

1,030 

130,768 

1 

1 

0 

45 

1,005 

45,225 

®

Jan. 1, 2002 

P.47 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL, XCVXXX/E, XC2VXXX 

Various 

T=85C, R.H.=85% 

XCSXXXL XCVXXX XCVXXXE XC2VXXX 

1 

1 

0 

11 

1,019 

11,209 

5 

5 

1 

153 

1,053 

161,170 

6 

6 

0 

204 

1,055 

215,128 

10 

10 

0 

296 

1,016 

300,834 

®

Jan. 1, 2002 

P.48 



Failures: 




Failure Analysis Number: 




Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXE 

VQFP-100, HQFP-240 

T = 85C, R.H. = 85% 

XC4005E XC4020E XC4XXXE 

1 

1 

0 

74 

1,069 

79,106 

1 

1 

0 

45 

1,128 

50,760 

2 

2 

0 

119 

1,091 

129,866 

®

Jan. 1, 2002 

P.49 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXL 

BGA-432, 560, PQFP-240, HT-144, PLCC-84 

T = 85C, R.H. = 85% 

XC4010XL XC4013XL XC4044XL 

1 

1 

0 

45 

1,006 

45,270 

2 

2 

0 

89 

1,102 

98,038 

1 

1 

0 

45 

1,009 

45,405 

®

Jan. 1, 2002 

P.50 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXL 

BGA-432, 560, PQFP-240, HT-144, PLCC-84 

T = 85C, R.H. = 85% 

XC4062XL XC4085XL XC4XXXXL 

1 

1 

0 

33 

1,096 

36,159 

1 

1 

0 

12 

1,054 

12,648 

6 

6 

0 

224 

1,059 

237,160 

®

Jan. 1, 2002 

P.51 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXLA 

HQFP- 240, PQFP- 240 

T = 85C, R.H. = 85% 

XC4013XLA XC4028XLA XC4062XLA XC4XXXXLA 

1 

1 

0 

37 

1,071 

39,627 

1 

1 

0 

45 

1,012 

45,556 

1 

1 

0 

45 

1,013 

45,585 

3 

3 

0 

127 

1,030 

130,768 

®

Jan. 1, 2002 



P.52 

Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXX 

TQFP-144 

T = 85C, R.H. = 85% 

XCS30 XCSXX 

1 

1 

0 

45 

1,005 

45,225 

1 

1 

0 

45 

1,005 

45,225 

®

Jan. 1, 2002 

P.53 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL 

TQFP-144 

T = 85C, R.H. = 85% 

XCS30XL XCSXXXL 

1 

1 

0 

11 

1,019 

11,209 

1 

1 

0 

11 

1,019 

11,209 

®

Jan. 1, 2002 

P.54 



Failures: 




Failure Analysis Number:` 




Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXX 

TQFP-144, BGA-432,560, FG-256, 680 

T = 85C, R.H. = 85% 

XCV100 XCV200 XCV600 XCV1000 XCVXXX 

1 

1 

0 

60 

1,061 

63,660 

1 

1 

1 

21 

1,006 

21,126 

F/a00167(1)-ASL 

2 

2 

0 

40 

1,046 

41,824 

1 

1 

0 

32 

1,080 

34,560 

5 

5 

1 

153 

1,053 

161,170 

®

Jan. 1, 2002 

P.55 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXXE 

CS-144, BGA-728, 560, FG-680, 1156 

T = 85C, R.H. = 85% 

XCV200E XCV1000E XCV2000E XCVXXXE 

1 

1 

0 

74 

1,043 

77,159 

1 

1 

0 

32 

1,148 

36,740 

4 

4 

0 

98 

1,033 

101,229 

6 

6 

0 

204 

1,055 

215,128 

®

Jan. 1, 2002 



P.56 

Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC2VXXX 

FG-256 

T = 85C, R.H. = 85% 

XC2V40 XC2V3000 XC2V6000 XC2VXXX 

1 

1 

0 

73 

1,005 

73,365 

3 

3 

0 

94 

1,003 

94,320 

6 

6 

0 

129 

1,032 

133,149 

10 

10 

0 

296 

1,016 

300,834 

®

Jan. 1, 2002 

P.57 



Failures: 





Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXX/E, XCSXX/XL 

Various 

T=121C; R.H.=100% 

XC4XXX XC4XXXE XCSXX XCSXXXL 

1 

1 

0 

74 

96 

7,104 

1 

1 

0 

45 

96 

4,320 

2 

2 

0 

96 

96 

9,216 

1 

1 

0 

45 

168 

7,560 

®

Jan. 1, 2002 

P.58 



Failures: 





Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXLA, XCVXXX/E 

Various 

T=121C; R.H.=100% 

XC2SXX/E XC4XXXXL XC4XXXXLA XCVXXX XCVXXXE 

3 

3 

0 

191 

96 

18,336 

6 

6 

1 

269 

96 

25,824 

7 

7 

0 

288 

118 

33,840 

16 

16 

0 

678 

104 

70,660 

12 

12 

0 

370 

116 

43,080 

®

Jan. 1, 2002 

P.59 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XC4013 XC4XXX 

1 

1 

0 

74 

96 

7,104 

Si Gate CMOS 

XC4XXX 

PQFP-208 

T=121C; R.H.=100% 

1 

1 

0 

74 

96 

7,104 

®

Jan. 1, 2002 

P.60 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XC4020E XC4XXXE 

1 

1 

0 

45 

96 

4,320 

Si Gate CMOS 

XC4XXXE 

HQFP-240 

T=121C; R.H.=100% 

1 

1 

0 

45 

96 

4,320 

®

Jan. 1, 2002 

P.61 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL 

VQFP-100 

T=121C; R.H.=100% 

XCS30 XCSXX 

2 

2 

0 

96 

96 

9,216 

2 

2 

0 

96 

96 

9,216 

®

Jan. 1, 2002 

P.62 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL 

PQFP-208 

T=121C; R.H.=100% 


1 

1 

0 

45 

168 

7,560 

1 

1 

0 

45 

168 

7,560 

®

Jan. 1, 2002 

P.63 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XC2S100 XC2S200E XC2S300 XC2SXXX/E 

1 

1 

0 

45 

96 

4,320 

Si Gate CMOS 

XC2SXXX/E 

FT-256, FG-256 

T=121C; R.H.=100% 

1 

1 

0 

76 

96 

7,296 

1 

1 

0 

70 

96 

6720 

3 

3 

0 

191 

96 

18,336 

®

Jan. 1, 2002 

P.64 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXL 

PQFP-240, BGA-432, PLCC-84 

TQFP-176, HT-144 

T=121C; R.H.=100% 

XC4010XL XC4013XL XC4044XL 

2 

2 

0 

90 

96 

8,640 

2 

2 

0 

89 

96 

8,544 

1 

1 

1 

45 

96 

4,320 

F/A01041(1)-ASL 

®

Jan. 1, 2002 

P.65 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 



1 

1 

0 

45 

96 

4.320 

Si Gate CMOS 

XC4XXXXL 

PQFP-240, BGA-256, 432, HT-144 

T=121C; R.H.=100% 

6 

6 

1 

269 

96 

25,824 

®

Jan. 1, 2002 

P.66 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XC4013XLA XC4020XLA XC4028XLA 

1 

1 

0 

41 

168 

6,888 

Si Gate CMOS 

XC4XXXXL 

PQFP-240, BGA-256, 560, HQFP-240 

T=121C; R.H.=100% 

1 

1 

0 

14 

96 

1,344 

1 

1 

0 

45 

96 

4,320 

®

Jan. 1, 2002 

P.67 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XC4062XLA XC4085XLA XC4XXXXLA 

1 

1 

0 

45 

168 

7,560 

Si Gate CMOS 

XC4XXXXLA 

BGA-256, 560, HQFP-240, PQFP-240 

T=121C; R.H.=100% 

3 

3 

0 

143 

96 

13,728 

7 

7 

0 

288 

118 

33,840 

®

Jan. 1, 2002 

P.68 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XCV100 XCV150 XCV200 XCV300 

1 

1 

0 

22 

96 

2,112 

Si Gate CMOS 

XCVXXX 

FG-456, 556, 676, 680, BG-352, 560 

HQFP-240, PQFP-240 

T=121C; R.H.=100% 

1 

1 

0 

45 

96 

4,320 

3 

3 

0 

152 

132 

20,064 

3 

3 

0 

150 

96 

14,400 

®

Jan. 1, 2002 

P.69 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XCV600 XCV800 XCV1000 XCVXXX 

2 

2 

0 

54 

96 

5,184 

Si Gate CMOS 

XCVXXX 

FG-456, 556, 676, 680, BG-352, 560 


T=121C; R.H.=100% 

3 

3 

0 

126 

96 

12,096 

3 

3 

0 

129 

96 

12,384 

16 

16 

0 

678 

104 

70,660 

®

Jan. 1, 2002 

P.70 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XCV200E XCV300E XCV1000E 

2 

2 

0 

95 

96 

9,120 

Si Gate CMOS 

XCVXXXXE 

CS-144, BGA-560, 728, FG-456,680,900,1156 

PQFP-240 

T=121C; R.H.=100% 

1 

1 

0 

39 

96 

3,744 

2 

2 

0 

61 

168 

10,248 

®

Jan. 1, 2002 

P.71 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XCV1600E XCV2000E XCVXXXXE 

1 

1 

0 

22 

168 

3,696 

Si Gate CMOS 

XCVXXXXE 

CS-144, BGA-560, 728, FG-456,680,900,1156 

PQFP-240 

T=121C; R.H.=100% 

5 

5 

0 

153 

106 

16,272 

12 

12 

0 

370 

116 

43,080 

®

Jan. 1, 2002 



P.72 

Failures: 


Mean Test Cycles/Device: 

Total Device Cycles: 



Temperature Cycle (Air to Air) 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXX/E, XC4XXXXLA 

Various 

T = -65C / +150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA,FG,CS 

XC4XXX XC4XXXE XC4XXXXL XC4XXXXLA 

1 

1 

0 

76 

1,000 

76,000 

4 

4 

0 

110 

1,014 

111,505 

10 

10 

0 

421 

1,006 

423,645 

3 

3 

0 

134 

1,000 

134,000 

®

Jan. 1, 2002 

P.73 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXX/XL, XC2SXXX/E 

Various 

T = -65C / +150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA,FG,CS 

XCSXX XCSXXXXL XC2SXXX/E 

2 

2 

0 

121 

766 

92,636 

17 

17 

0 

776 

1,000 

776,350 

8 

8 

0 

389 

1,099 

427528 

®

Jan. 1, 2002 



P.74 

Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXX, XCVXXXE/EA, XC2VXXX 

Various 

T = -65C / +150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA,FG,CS, FT 

T=0C/+100C (Air to Air) for FFGA 

T=-40C/+125C (air to Air) for FFGA 

XCVXXX XCVXXXE XCVXXXEA XC2VXXX 

34 

34 

0 

989 

1,025 

1,013,201 

26 

26 

0 

937 

1,001 

938,054 

6 

6 

0 

297 

1,012 

300,572 

13 

13 

0 

387 

765 

295,876 

®

Jan. 1, 2002 

P.75 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXX 

PQFP-208 

T = -65C/+150C (Air to Air) 

XC4013 XC4XXX 

1 

1 

0 

76 

1,000 

76,000 

1 

1 

0 

76 

1,000 

76,000 

®

Jan. 1, 2002 

P.76 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXX 

PQFP-208, PGA-223 

T = -65C/+150C (Air to Air) 

XC4010E XC4013E XC4020E XC4XXXE 

1 

1 

0 

35 

1,043 

36,505 

2 

2 

0 

30 

1,000 

30,000 

1 

1 

0 

45 

1,000 

45,000 

4 

4 

0 

110 

1,014 

111,505 

®

Jan. 1, 2002 

P.77 



Failures: 



Total Device cycles: 




Technology: 

Device Type: 

Package Type: 


XC4010XL XC4013XL XC4013XL* XC4020XL* 

2 

2 

0 

121 

1,146 

138,655 

Si Gate CMOS 

XC4XXXXL 

TQFP-176, BGA-256,352,432, 560, HT-144 

PLCC-84, PQFP-240 

T = -65C/+150C (Air to Air) 

*For BGA, T=-55C/+125C (Air to Air) 

2 

2 

0 

89 

1,027 

91,360 

1 

1 

0 

45 

560 

25,200 

2 

2 

0 

44 

1,000 

44,000 

®

Jan. 1, 2002 

P.78 



Failures: 



Total Device cycles: 




Technology: 

Device Type: 

Package Type: 


XC4044XL* XC4062XL* XC4085XL* XC4XXXXL 

1 

1 

0 

45 

1,023 

46,035 

Si Gate CMOS 

XC4XXXXL 

TQFP-176, BGA-256,352,432, 560, HT-144 

PLCC-84, PQFP-240 

T = -65C/+150C (Air to Air) 


1 

1 

0 

45 

1,043 

46,395 

1 

1 

0 

32 

1,000 

32,000 

10 

10 

0 

421 

1,006 

423,645 

®

Jan. 1, 2002 

P.79 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC4XXXXLA 

HQFP-240, 304, PQFP-240, BG-256, 352, 432, 560 

T = -65C/+150C (Air to Air) 


XC4013XLA XC4020XLA* XC4028XLA XC4028XLA* 

1 

1 

0 

45 

1,188 

53,460 

2 

2 

0 

44 

1,017 

44,726 

1 

1 

0 

43 

1,019 

43,817 

3 

3 

0 

135 

1,021 

137,880 

®

Jan. 1, 2002 



P.80 

Failures: 







Technology: 

Device Type: 

Package Type: 


XC4062XLA XC4062XLA* XC4085XLA* XC40XXXLA 

1 

1 

0 

34 

1,004 

34,136 

Si Gate CMOS 

XC4XXXXLA 

HQFP-240, 304, PQFP-240, BG-256, 352, 432, 560 

T = -65C/+150C (Air to Air) 


2 

2 

0 

90 

1,000 

90,000 

3 

3 

0 

134 

1,000 

134,000 

3 

3 

0 

134 

1,000 

134,000 

®

Jan. 1, 2002 



P.81 

Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXX 

VQFP-100, TQFP-144 

T = -65C/+150C (Air toAir) 

XCS30 XCSXX 

2 

2 

0 

121 

766 

92,636 

2 

2 

0 

121 

766 

92,636 

®

Jan. 1, 2002 

P.82 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL 

PQFP-208 


*For CS-280 T=-55C/+125C (Air to Air) 

XCS30XL XCS40XL XCSXXXL 

2 

2 

0 

89 

778 

69,250 

15 

15 

0 

687 

1,029 

707,100 

17 

17 

0 

776 

1,000 

776,350 

®

Jan. 1, 2002 

P.83 



Failures: 








Technology: 

Device Type: 

Package Type: 


XC2S50 XC2S100 XC2S150 

3 

3 

0 

55 

1,062 

58,410 

Si Gate CMOS 

XC2SXXX /E 

PQFP-208, FG-256, TQFP-144, FT-256 


T = -55C/+125C (Air to Air) 

1 

1 

0 

45 

1,000 

45,000 

2 

2 

0 

143 

1,244 

177,814 

®

Jan. 1, 2002 

P.84 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC2SXXX /E 

PQFP-208, FG-256, TQFP-144, FT-256 

T = -65C/+150C (Air to Air) 

T = -55C/+125C (Air to Air) 

XC2S200E XC2S300E XC2SXXX/E 

1 

1 

0 

76 

1,004 

76,304 

1 

1 

0 

70 

1,000 

70,000 

8 

8 

0 

389 

1,099 

427528 

®

Jan. 1, 2002 

P.85 



Failures: 







Technology: 

Device Type: 

Package Type: 


XCV50* XCV100 XCV150* XCV200* XCV300 XCV300* 

2 

2 

0 

49 

1,096 

53,710 

1 

1 

0 

22 

1,038 

22,836 

Si Gate CMOS 

XCVXXX 


FG-256,456,676,680, BGA-352,432,560 

T = -65C/+150C (Air to Air) 

*For CS, BGA,FG, T=-55C/+125C (Air to Air) 

1 

1 

0 

45 

1,000 

45,000 

4 

4 

0 

218 

1,006 

219,342 

2 

2 

0 

79 

1,004 

79,315 

4 

4 

0 

150 

1,008 

151,232 

®

Jan. 1, 2002 

P.86 



Failures: 







Technology: 

Device Type: 

Package Type: 


XCV400* XCV600* XCV800* XCV800 XCV1000* XCVXXX 

4 

4 

0 

180 

1,031 

185,580 

3 

3 

0 

76 

1,087 

82,600 

Si Gate CMOS 

XCVXXX 


FG-256,456,676,680, BGA-352,432,560 

T = -65C/+150C (Air to Air) 

*For CS, BGA,FG, T=-55C/+125C (Air to Air) 

3 

3 

0 

44 

1,006 

44,264 

1 

1 

0 

72 

1,000 

72,000 

2 

2 

0 

54 

1,062 

57,322 

34 

34 

0 

989 

1,025 

1,013,201 

®



Jan. 1, 2002 

P.87 

Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXXE 

HQFP-240, PQFP-240, FG-456,676,680, 900,1156, 

BGA-560, 728, CS-144 

T = -65C/+150C (Air to Air) 

*For FG,BGA, CS, T=-55C/+125C (Air to Air) 

XCV200E* XCV200E XCV300E* XCV300E XCV600E* 

1 

1 

0 

74 

1,000 

74,000 

1 

1 

0 

25 

1,075 

26,875 

1 

1 

0 

68 

1,000 

68,000 

3 

3 

0 

60 

1,008 

60,464 

4 

4 

0 

301 

1,006 

302,764 

®

Jan. 1, 2002 



P.88 

Failures: 







Technology: 

Device Type: 

Package Type: 


XCV1600E* XCV1000E XCV1000E* XCV2000E* XCVXXXE 

1 

1 

0 

22 

1,000 

22,000 

2 

2 

0 

46 

770 

35,440 

Si Gate CMOS 

XCVXXXE 

HQFP-240, PQFP-240, FG-456,676,680, 860,900,1156, 

BGA-560, 728, CS-144 

T = -65C/+150C (Air to Air) 


4 

4 

0 

122 

1,078 

131,515 

9 

9 

0 

219 

987 

216,096 

26 

26 

0 

937 

1,001 

938,054 

®

Jan. 1, 2002 

P.89 



Failures: 







Technology: 

Device Type: 

Package Type: 


XCV300EA XCV3200EA* XCVXXXEA 

4 

4 

0 

241 

1,015 

244,572 

Si Gate CMOS 

XCVXXXEA 

PQFP-240, FG-1156, 

T = -65C/+150C (Air to Air) 


2 

2 

0 

56 

1,000 

56,000 

6 

6 

0 

297 

1,012 

300,572 

®

Jan. 1, 2002 



P.90 

Failures: 







Technology: 

Device Type: 

Package Type: 


XC2V1000* XC2V300* XC2V3000# XC2V3000** XC2V6000# 

1 

1 

0 

70 

1,000 

70,000 

Si Gate CMOS 

XC2VXXX 

FG-256, FG676, FF1152, FF1517 

*For FG, T=-55C/+125C (Air to Air) 

**For C-grade FF pkg. T=0C/+100C (Air to Air) 

# For I -grade FF pkg. T=-40C/+125C (air to Air) 

1 

1 

0 

32 

1,015 

33,376 

1 

1 

0 

32 

500 

16,000 

1 

1 

0 

31 

1,000 

31,000 

3 

3 

0 

84 

500 

42,000 

®

Jan. 1, 2002 

P.91 



Failures: 







Technology: 

Device Type: 

Package Type: 


XC2V6000** XC2V4000# XC2VXXX 

4 

4 

0 

69 

1,000 

69,000 

Si Gate CMOS 

XC2VXXX 

FG-256, 

*For FG, T=-55C/+125C (Air to Air) 

**For C-grade FF pkg. T=0C/+100C (Air to Air) 

# For I -grade FF pkg. T=-40C/+125C (air to Air) 

2 

2 

0 

69 

500 

34,500 

13 

13 

0 

387 

765 

295,876 

®

Jan. 1, 2002 



P.92 

Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL, XC2SXXX, XCVXXX, XCVXXXE, XCVXXXEA 

Microcircuit Group 

Various 

T = 130C, R.H. = 85% 

XCSXXXL XC2SXXX XCVXXX XCVXXXE XCVXXXEA 

1 

1 

0 

22 

100 

2,200 

1 

1 

0 

24 

100 

2,400 

9 

9 

0 

193 

139 

26,900 

7 

7 

0 

207 

100 

20,742 

2 

2 

0 

148 

100 

14,800 

®

Jan. 1, 2002 



P.93 

Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCSXXXL Microcircuit Group 

CS-280 

T = 130C, R.H. = 85% 


1 

1 

0 

22 

100 

2,200 

1 

1 

0 

22 

100 

2,200 

®

Jan. 1, 2002 

P.94 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC2SXXX Microcircuit Group 

PQFP-240 

T = 130C, R.H. = 85% 

XC2S150 XC2SXXX 

1 

1 

0 

24 

100 

2,400 

1 

1 

0 

24 

100 

2,400 

®

Jan. 1, 2002 

P.95 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXX 

PQFP-240, HQFP-240, FG-556 

T = 130C, R.H. = 85% 

XCV100 XCV300 XCV800 XCV1000 XCVXXX 

1 

1 

0 

22 

100 

2,200 

2 

2 

0 

44 

148 

6,500 

1 

1 

0 

24 

100 

2,400 

1 

1 

0 

22 

100 

2,200 

9 

9 

0 

193 

139 

26,900 

®

Jan. 1, 2002 

P.96 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXXE 

BGA-560,728, FG-680, 900, 1156, PQFP-240 

T = 130C, R.H. = 85% 

XCV300E XCV1000E XCV1600E XCV2000E XCVXXXE 

1 

1 

0 

76 

100 

7,600 

3 

3 

0 

65 

101 

6,542 

1 

1 

0 

22 

100 

2,200 

2 

2 

0 

44 

100 

4,400 

7 

7 

0 

207 

100 

20,742 

®

Jan. 1, 2002 

P.97 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCVXXXEA 

PQFP-240 

T = 130C, R.H. = 85% 

XCV300EA XCVXXXEA 

2 

2 

0 

148 

100 

14,800 

2 

2 

0 

148 

100 

14,800 

®

Jan. 1, 2002 

P.98 

The 

Coolrunner 

Products


Failures: 



Mean : 






Jan. 1, 2002 

P.99 





Technology: 

Device Type: 

Package Type: 



Si Gate CMOS 

XCRXXXX Microcircuit Group 

BG492 

125C 

0.7 ev @ C.L. = 60% 

XCR3960 

3 

2 

198 

198,000 

1,000 

198,000 

15,408,936 

1.86E+08 

131 

11 

F/A(2)-Std by current 

®


Failures: 



Mean : 




Jan. 1, 2002 

P.100 





Technology: 

Device Type: 

Package Type: 



XCR5064 XCR3(5)128 XCR22(L)V10 XCR3(5)032 XCRXXXX 

2 

1 

150 

149,168 

994 

498,180 

38,769,847 

4.69E+08 

F/A(1)-Gate oxide defect 

Si Gate CMOS 

XCRXXX Microcircuit Group 

PLCC-28, 44, 84 

150C 

0.7 ev @ C.L. = 60% 

2 

2 

172 

133,072 

774 

444,424 

34,586,380 

4.18E+08 

F/A(2)-1-Idd failure, 

1-single bit charge loss 

1 

0 

154 

154,000 

1,000 

514,318 

40,025,719 

4.84E+08 

4 

0 

306 

306,000 

1,000 

1,021,956 

79,531,623 

9.62E+08 



9 

3 

782 

742,240 

949 

2,478,879 

192,913,568 

2.33E+09 

22 

2 

®


Failures: 



Mean : 




Jan. 1, 2002 

P.101 





Technology: 

Device Type: 

Package Type: 



Si Gate CMOS 

XCR3XXXXL 

TQ-144, VQ-100 

145C 

0.7 ev @ C.L. = 60% 

XCR3032XL XCR3256XL XCR3064XL XCR3128XL XCR3XXXXL 

2 

0 

152 

118,712 

781 

315,119 

24,523,499 

2.97E+08 

1 

0 

77 

39,732 

516 

105,468 

8,207,828 

9.92E+07 

1 

0 

78 

156,468 

2,006 

415,342 

32,323,125 

3.91E+08 

1 

0 

78 

85,524 

1,0258 

219,059 

17,047,790 

2.06E+08 



5 

0 

385 

397,436 

1,032 

1,054,988 

82,102,243 

9.93E+08 

11 

1 

®

Jan. 1, 2002 

P.102 



Failures: 






Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


BGA492, PC84, CP56 

T = 130C, R.H. = 85%, 

XCR3960 XCR3(5)128 XCR3064A XCRXXX 

3 

3 

0 

105 

96 

10,080 

1 

1 

1 

77 

96 

7,392 

1F- single bit charge loss 

1 

1 

0 

44 

100 

4,400 

5 

5 

1 

226 

97 

21,872 

®

Jan. 1, 2002 

P.103 



Failures: 






Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCRXXXXXL Microcircuit Group 

VQFP-44 

T = 130C, R.H. = 85%, 

XCR3032XL XCRXXXXL 

1 

1 

0 

76 

100 

7,600 

1 

1 

0 

76 

100 

7,600 

®



Jan. 1, 2002 

P.104 

Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


BGA-492, TQ-44, LQ-128, TQ100, PLCC-44,84, PQFP-100 

TQFP-100, CP-56, PC-28 

*T = -55C/+125C (Air to Air) 

T= -65C/+150C (Air to Air) 

XCR3960* XCR5064* XCR3(5)128 

3 

3 

0 

89 

1,000 

89,000 

3 

3 

0 

224 

1,000 

224,000 

7 

7 

1 

614 

475 

291,600 

F/A(1)-Single bit charge loss 

®



Jan. 1, 2002 

P.105 

Failures: 








Technology: 

Device Type: 

Package Type: 


XCR3(5)064 XCR22(L)V10 XCRXXXX 

4 

4 

0 

276 

1,000 

276,000 

Si Gate CMOS 

XCRXXXX & XCRXXVXX Microcircuit Group 

BGA-492, TQ-44, LQ-128, TQ100, PLCC-44,84, PQFP-100 

TQFP-100, CP-56, PC-28, SO-24, VO24 

*T = -55C/+125C (Air to Air) 

T= -65C/+150C (Air to Air) 

5 

5 

0 

456 

833 

380,000 

21 

21 

1 

1,371 

887 

1,215,600 

®

Jan. 1, 2002 P.106 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCRXXXXL Microcircuit Group 

TQ-144, CS-144, 48, 280, VQFP-44, PLCC-44 

*T = -55C/+125C (Air to Air) 

T = -65C/+150C (Air to Air) 

XCR3256XL XCR3032XL XCR3128XL XCR3364XL 

2 

2 

0 

150 

909 

136,342 

*1 

1 

0 

76 

1,077 

81,852 

2 

2 

0 

152 

1,000 

152,000 

*1 

1 

0 

76 

1,000 

76,000 

*1 

1 

0 

76 

1,000 

76,000 

*1 

1 

0 

50 

1,000 

50,050 

®

Jan. 1, 2002 P.107 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


TQ-144, CS-144, 48, 280, VQFP-44, PLCC-44 

PQFP-208, FT-256 

*T = -65C/+150C (Air to Air) 

T = -55C/+125C (Air to Air) 

XCR3064XL XCR3384XL XCRXXXXXL 

1 

1 

0 

76 

1,343 

104,348 

*1 

1 

0 

76 

1,021 

77,596 

1 

1 

0 

76 

1,000 

76,000 

*1 

1 

0 

76 

1,000 

76,000 

12 

12 

0 

884 

1,025 

906,188 

®

Jan. 1, 2002 

P.108 



Failures: 


Mean Test Hour s/Device: 




Pressure Pot 


Technology: 

Device Type: 

Package Type: 


XCR3960 XCR3(5)064 XCR3(5)128 XCR3(5)032 XCRXXXX 

3 

3 

4 

101 

166 

16,752 

F/A(4)2-pkg warped 

2-Stdby current 

7 

7 

0 

533 

217 

115,584 

Si Gate CMOS 

XCRXXXX Microircuit Group 

BGA492, TQ44, PC44,84, PQ100, TQ100, LQ128, CP56 

T=121C; R.H.=100% 

7 

7 

0 

607 

123 

74,760 

3 

3 

0 

231 

168 

38,808 

20 

20 

0 

1,472 

167 

245,904 

®

Jan. 1, 2002 

P.109 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCRXXVXX Microcircuit Group 

VO-24, SO-24 

T=121C; R.H.=100% 

XCR22VXX XCRXXVXX 

4 

4 

0 

303 

96 

29,088 

4 

4 

0 

303 

96 

29,088 

®

Jan. 1, 2002 

P.110 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCR3(5)032 Microcircuit Group 

PC44 

T = 85C, R.H. = 85% 

XC3(5)032 

3 

3 

0 

230 

1,000 

230,000 

®

Jan. 1, 2002 

P.111 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


PLCC- 84, BG-492, CP-56 

T = 130C, R.H. = 85% 

XCR3960 XCR3064A XCR3(5)128 

3 

3 

0 

105 

96 

10,080 

1 

1 

0 

44 

100 

4,400 

1 

1 

1 

77 

96 

7,392 

FA(1)-Single bit charge loss 

®

Jan. 1, 2002 P.112 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCRXXXXXL 

VQFP-44 

T = 130C, R.H. = 85% 

XCR3032XL XCR3384XL XCRXXXXL 

2 

2 

0 

152 

100 

15,200 

1 

1 

0 

15 

100 

1,500 

2 

3 

0 

167 

100 

16,700 

®

Jan. 1, 2002 

P.113 



Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


PLCC- 84 

25C 

XCR3(5)128 

1 

1 

0 

10 

1,000 

10,000 

®

Jan. 1, 2002 

P.114 



Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


VQFP-44 

85C 

XCR3032XL 

1 

1 

0 

32 

12,000 

384,000 

®

Jan. 1, 2002 

P.115 



Failures: 





Data Retention 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCRXXXXL 

VQFP-44 

150C 

XCR3032XL 

1 

1 

0 

45 

1,000 

45,000 

®

Jan. 1, 2002 

P. 116 

The 

CPLD & EPROM 

Products


Failures: 



Mean of Stress Test hour: 






Jan. 1, 2002 P. 117 




Technology: 

Device Type: 

Package Type: 




Si Gate CMOS 

XC17XXXE, XC17XXXL, 17SXX, XC17SXXXL 

Various 

145C 

0.58 ev for Eprom, 

60% 

XC17XXXE XC17XXL XC17SXX XC17SXXXL 

3 

0 

197 

203,230 

1,032 

456,337 

16,834,625 

1.33E+08 

54 

7 

1 

0 

307 

244,912 

798 

549,931 

20,287,367 

1.60E+08 

43 

6 

10 

0 

653 

744,836 

1,141 

1,672,471 

61,698,738 

4.87E+08 

15 

2 

9 

0 

529 

475,685 

899 

1,068,114 

39,403,525 

3.11E+08 

23 

3 

®


Failures: 









Jan. 1, 2002 

P. 118 




Technology: 

Device Type: 

Package Type: 




Si Gate CMOS 

XC17VXX, XC18VXX, XC95XXX, XC95XXXXL 

Various 

145C 

0.58 ev for Eprom; 0.7 e.v. for XC95XXX 

@ C.L. = 60% 

XC17VXX XC18VXX XC95XX XC95XXXXL 

8 

2 

607 

462,700 

762 

1,038,957 

38,327,908 

2.04E+08 

81 

10 

3 

0 

152 

272,840 

1,795 

612,641 

22,600,792 

1.78E+08 

41 

5 

6 

0 

330 

229,938 

697 

610,367 

47,500,542 

5.74E+09 

19 

2 

8 

0 

632 

461,807 

731 

1,225,860 

95,399,990 

1.15E+09 

10 

1 

®


Failures: 







Jan. 1, 2002 

P. 119 




Technology: 

Device Type: 

Package Type: 





XC17XXXE 

PD8 

145C 

0.58 ev 

60% 


3 

0 

197 

203,230 

1,032 

456,337 

16,834,625 

1.33E+08 



3 

0 

197 

203,230 

1,032 

456,337 

16,834,625 

1.33E+08 

54 

7 

®


Failures: 







Jan. 1, 2002 

P. 120 





Technology: 

Device Type: 

Package Type: 





XC17XXL 

PD8, VQFP-44, CC-44 

145C 

0.58 ev 

60% 

XC1701L XC1704L XC17XXL 

5 

0 

229 

166,444 

727 

373,737 

13,787,444 

1.09E+08 

1 

0 

78 

78,468 

1,006 

176,194 

6,499,923 

5.13E+07 



6 

0 

307 

244,912 

798 

549,931 

20,287,367 

1.60E+08 

45 

6 

®


Failures: 







Jan. 1, 2002 

P. 121 




Technology: 

Device Type: 

Package Type: 





XC17SXX 

PD8, CC44 

145C 

0.58 ev 

60% 

XC17S05 XC17S20 X C17S30 XC17S40* XC17SXX 

1 

0 

106 

108,438 

1,023 

243,489 

8,982,498 

7.08E+07 

1 

0 

106 

108,438 

1,023 

243,489 

8,982,498 

7.08E+07 

3 

0 

197 

203,230 

1,032 

456,337 

16,834,625 

1.33E+08 

5 

0 

244 

324,730 

1,331 

729,156 

26,899,117 

2.12E+08 

10 

0 

653 

744,836 

1,141 

1,672,471 

61,698,738 

4.87E+08 



®

Combined Started Lots: 

Failures: 







Jan. 1, 2002 P. 122 





Technology: 

Device Type: 

Package Type: 





XC17SXXXL 

PD8, CC-44 

145C 

0.58 ev 

60% 

XC17S10XL XC17S40XL XC17S50XL XC17S150XL XC17SXXXL 

3 

0 

197 

203,230 

1,032 

456,337 

16,834,625 

1.33E+08 

1 

0 

107 

109,461 

1,023 

245,786 

9,067,238 

7.15E+07 

1 

0 

41 

41,820 

1,020 

93,904 

3,464,174 

2.73E+07 

4 

0 

184 

121,174 

659 

272,087 

10,037,489 

7.92E+07 

9 

0 

529 

475,685 

899 

1,068,114 

39,403,525 

3.11E+08 



®


Failures: 







Oct. 1, 2001 P. 123 





Technology: 

Device Type: 

Package Type: 





XC17VXX 

PD8, VQFP-44 

145C 

0.58 ev 

60% 

XC17V01 XC17V04 XC17V16 XC17VXXX 

1 

0 

77 

79,079 

1,027 

177,566 

6,550,535 

5.17E+07 

5 

2 

379 

267,429 

706 

600,491 

22,152,570 

1.75E+08 

FA 00200(2)-RAND 

2 

0 

151 

116,192 

769 

260,900 

9,624,803 

7.59E+07 



8 

2 

607 

462,700 

762 

1,038,957 

38,327,908 

2.04E+08 

81 

10 

®


Failures: 







Jan. 1, 2002 

P. 124 




Technology: 

Device Type: 

Package Type: 





XC18VXX 

VQFP-44 

145C 

0.58 ev 

60% 

XC18V04 XC18VXX 

2 

0 

152 

272,840 

1,795 

612,641 

22,600,792 

1.78E+08 



2 

0 

152 

272,840 

1,795 

612,641 

22,600,792 

1.78E+08 

41 

5 

®


Failures: 







Jan. 1, 2002 

P. 125 




Qualification & Monitor 

Technology: 

Device Type: 

Package Type: 





XC95XXX 

PLCC-44, 84 

145C 

0.7 ev 

60% 

XC9536 XC9572 XC95XX 

5 

0 

255 

754 

863 

510,227 

39,707,320 

4.80E+08 

1 

0 

75 

37,725 

503 

100,140 

7,793,222 

9.42E+07 



6 

0 

330 

229,938 

697 

610,367 

47,500,542 

5.74E+08 

19 

2 

®


Failures: 







Jan. 1, 2002 

P. 126 




Qualification & Monitor 

Technology: 

Device Type: 

Package Type: 




XC9536XL XC95288XL XC95XXXL 

4 

0 

303 

114,491 

378 

303,915 

23,651,526 

2.86E+08 


XC95XXXL 

PQFP-208, HQFP-208, PLCC-44 

145C 

0.7 ev 

60% 

4 

0 

329 

347,316 

1,056 

921,945 

71,748,464 

8.67E+08 



8 

0 

632 

461,807 

731 

1,225,860 

95,399,990 

1.15E+09 

10 

1 

®



Jan. 1, 2002 

P. 127 

Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XX/L, XC17XXXE, XC17SXX, XC17VXX 

Various 

T=85C, R.H.=85% 

XC17XX/L XC17XXE XC17SXX XC17VXX 

1 

1 

0 

45 

1,117 

50,265 

1 

1 

0 

45 

1,388 

62,460 

2 

2 

0 

90 

1,003 

90,270 

1 

1 

0 

80 

1,014 

81,120 

®

Jan. 1, 2002 

P. 128 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC18VXX, XC95XXX, XC95XXXXL 

Various 

T=85C, R.H.=85% 

XC18VXX XC95XXX XC95XXXXL 

3 

3 

0 

109 

1,145 

124,822 

4 

4 

0 

182 

742 

134,982 

2 

2 

0 

69 

1,095 

26,280 

®

Jan. 1, 2002 

P. 129 



Failures: 







Technology: 

Device Type: 

Package Type: 


XC1701L XC17XX/L 

1 

1 

0 

45 

1,117 

50,265 

Si Gate CMOS 

XC17XX/L Microcircuit Group 

PD-8 

T = 85C, R.H. = 85% 

1 

1 

0 

45 

1,117 

50,265 

®

Jan. 1, 2002 

P. 130 



Failures: 







Technology: 

Device Type: 

Package Type: 



1 

1 

0 

45 

1,388 

62,460 

Si Gate CMOS 

XC17XXXE 

PD-8 

T = 85C, R.H. = 85% 

1 

1 

0 

45 

1,388 

62,460 

®

Jan. 1, 2002 

P. 131 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17SXX Microcircuit Group 

VOIC-8, PD-8 

T = 85C, R.H. = 85% 

XC17S20 XC17SXX 

2 

2 

0 

90 

1,003 

90,270 

2 

2 

0 

90 

1,003 

90,270 

®

Jan. 1, 2002 P. 132 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17VXX Microcircuit Group 

VQFP-44 

T = 85C, R.H. = 85% 

XC17V01 XC17V16 XC17VXX 

1 

1 

0 

45 

1,001 

45,045 

1 

1 

0 

80 

1,014 

81,120 

2 

2 

0 

125 

1,009 

126,165 

®

Jan. 1, 2002 

P. 133 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


VQFP-44, SO-20 

T = 85C, R.H. = 85% 


2 

2 

0 

119 

1,116 

132,782 

1 

1 

0 

60 

1,005 

60,300 

3 

3 

0 

109 

1,145 

124,822 

®

Jan. 1, 2002 

P. 134 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX Microcircuit Group 

PQFP-160, VQFP-44 

T = 85C, R.H. = 85% 

XC95108 XC9536 XC95XXX 

1 

1 

0 

76 

1,071 

81,396 

3 

3 

0 

106 

506 

53,586 

4 

4 

0 

182 

742 

134,982 

®

Jan. 1, 2002 

P. 135 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXXL Microcircuit Group 

CS-144, 280 

T = 85C, R.H. = 85% 


1 

1 

0 

24 

1,095 

26,280 

1 

1 

0 

45 

1,118 

45,360 

2 

2 

0 

69 

1,095 

26,280 

®

Jan. 1, 2002 

P. 136 



Failures: 





Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXX/L, XC17XXE, XC17VXX 

Various 

T=121C, 100% R.H. 

XC17XX/L XC17XXE XC17VXX 

2 

2 

0 

120 

96 

11,520 

1 

1 

0 

45 

96 

4,320 

2 

2 

0 

120 

96 

11,520 

®

Jan. 1, 2002 

P. 137 



Failures: 





Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17SXX, XC18VXX, XC95XXX, XC95XXXXL 

Various 

T=121C, 100% R.H. 

XC17SXX XC18VXX XC95XXX XC95XXXXL 

2 

2 

0 

89 

96 

8,544 

2 

2 

0 

118 

141 

16,584 

31 

31 

0 

1,775 

132 

235,008 

2 

2 

0 

117 

121 

14,184 

®

Jan. 1, 2002 P. 138 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XX /L 

PD-8 

T = 121C, 100% R.H. 

XC1701/L XC17XX/L 

1 

1 

0 

45 

96 

4,320 

1 

1 

0 

45 

96 

4,320 

®

Jan. 1, 2002 

P. 139 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXXE Microcircuit Group 

PD-8 

T = 121C, 100% R.H. 


1 

1 

0 

45 

96 

4,320 

1 

1 

0 

45 

96 

4,320 

®

Jan. 1, 2002 

P. 140 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17SXX Microcircuit Group 

VOIC-8, PD-8 

T = 121C, 100% R.H. 


2 

2 

0 

89 

96 

8,544 

2 

2 

0 

89 

96 

8,544 

®

Jan. 1, 2002 

P. 141 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


VOIC-8, SOIC-20 

T = 121C, 100% R.H. 


2 

2 

0 

120 

96 

11,520 

2 

2 

0 

120 

96 

11,520 

®

Jan. 1, 2002 

P. 142 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


SOIC-20 

T = 121C, 100% R.H. 


2 

2 

0 

118 

141 

16,584 

2 

2 

0 

118 

141 

16,584 

®

Jan. 1, 2002 

P. 143 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 


PLCC-44, 84, TQFP-100, PQFP-100 

HQFP-208 

T = 121C, 100% R.H. 

XC9572 XC95216 XC95XXX 

23 

23 

0 

1,521 

136 

206,400 

1 

1 

0 

45 

96 

4,320 

24 

24 

0 

1,566 

135 

210,720 

®

Jan. 1, 2002 

P. 144 



Failures: 






Pressure Pot 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXXL 

CS-144, VQFP-64 

T = 121C, 100%R.H. 


1 

1 

0 

41 

168 

6,888 

1 

1 

0 

76 

96 

7,296 

2 

2 

0 

117 

121 

14,184 

®

Jan. 1, 2002 P. 145 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XX/L, XC17XXXE, XC17SXX, XC17VXX 

Various 

T = -65C / +150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA 

XC17XX XC17XXXE XC17SXX XC17VXX 

2 

2 

0 

121 

1,046 

126,505 

1 

1 

0 

45 

1,114 

50,130 

1 

1 

0 

45 

1,161 

52,245 

8 

8 

2 

402 

805 

323,522 

®

Jan. 1, 2002 P. 146 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC18VXX, XCCACEM16, XC95XXX & XC95XXXXL 

Various 

T = -65C / +150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA 

T= -40C / +125C (Air to Air) for BG388 

XC18VXX XCCACEM16 XC95XXX XC95XXXL 

5 

5 

0 

298 

635 

189,266 

5 

5 

0 

298 

635 

189,266 

29 

29 

0 

1,865 

950 

1,771,468 

8 

8 

0 

570 

1,003 

571,860 

®

Jan. 1, 2002 P. 147 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XX/L 

PD-8 

T = -65C/+150C (Air to Air) 

XC1701/L XC17XX 

1 

1 

0 

45 

1,021 

45,945 

1 

1 

0 

45 

1,021 

45,945 

®

Jan. 1, 2002 

P. 148 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXXE 

PD-8 

T = -65C/+150C (Air to Air) 


1 

1 

0 

45 

1,114 

50,130 

1 

1 

0 

45 

1,114 

50,130 

®

Jan. 1, 2002 

P. 149 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17SXX 

VOIC-8 

T = -65C/+150C (Air to Air) 


1 

1 

0 

45 

1,161 

52,245 

1 

1 

0 

45 

1,161 

52,245 

®

Jan. 1, 2002 

P. 150 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17VXX 

VQFP-44, VOIC-8, PLCC-20, 44, SOIC-20 

T = -65C/+150C (Air to Air) 

XC17V01 XC17V04 XC17V16 XC17VXX 

2 

2 

0 

120 

1,010 

121,200 

1 

1 

0 

76 

1,012 

76,912 

5 

5 

0 

225 

757 

170,410 

8 

8 

0 

421 

875 

368,522 

®

Jan. 1, 2002 P. 151 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC18VXX 

VQFP-44, SOIC-20, PLCC-44 

T = -65C/+150C (Air to Air) 

XC18V01 XC18V02 XC18V04 XC18VXX 

1 

1 

0 

72 

505 

36,366 

3 

3 

0 

66 

906 

59,818 

5 

5 

0 

237 

696 

164,857 

9 

9 

0 

375 

696 

261,041 

®

Jan. 1, 2002 

P. 152 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XCCACEM16 

BG388 

T = -40C/+125C (Air to Air) 

XCCACEM16 

3 

3 

0 

94 

1,030 

96,816 

®

Jan. 1, 2002 

P. 153 



Failures: 








Technology: 

Device Type: 

Package Type: 


XC9536 XC9572 XC95108 XC95288 XC95288* XC95XXX 

4 

4 

0 

280 

1,006 

281,752 

16 

16 

0 

1,119 

978 

1,094,896 

Si Gate CMOS 

XC95XXX 

PQFP-100,160, PLCC-44, 84, 

TQFP-100, BGA-352, HQ208 

T = -65C/+150C (Air to Air) 

T = -55C / +125C (Air to Air) for BGA* 

1 

1 

0 

76 

1,018 

77,368 

1 

1 

2 

76 

1,101 

83,676 

F/A 00173(2)-CRCP 

2 

2 

0 

66 

1,000 

66,000 

24 

24 

2 

1,617 

965 

1,559,988 

®

Jan. 1, 2002 

P. 154 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXL 

PQFP-208, TQFP-144, CS-144-280, VQFP-64, PLCC-44 

T = -65C/+150C (Air to Air) 

T = -55C / +125C (Air to Air) for CS* & BGA* 

XC95144XL XC95144XL* XC95288XL 

2 

2 

0 

150 

1,000 

150,000 

1 

1 

0 

41 

1,012 

41,492 

2 

2 

0 

153 

1,077 

168,840 

®

Jan. 1, 2002 

P. 155 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXL 

PQFP-208, TQFP-144, CS-144-280, VQFP-64, PLCC-44 

T = -65C/+150C (Air to Air) 

T = -55C / +125C (Air to Air) for CS* & BGA* 

XC95288XL* XC9536XL XC9572XL XC95XXXXL 

1 

1 

0 

76 

1,000 

76,000 

1 

1 

0 

76 

1,000 

76,000 

2 

2 

0 

151 

1,000 

151,000 

9 

9 

0 

647 

1,019 

659,322 

®

Jan. 1, 2002 

P. 156 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

Various 

T = 130C, R.H. = 85% 

XC95XXX 

2 

2 

0 

57 

200 

11,400 

®

Jan. 1, 2002 

P. 157 



Failures: 





Hast 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

PLCC-44 

T = 130C, R.H. = 85% 

XC9572 XC95XXX 

2 

2 

0 

57 

200 

11,400 

2 

2 

0 

57 

200 

11,400 

®

Jan. 1, 2002 

P. 158 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXXE, XC17XXL, XC17SXXXL 

Various 

150C 

XC17XXXE XC17XXL XC17SXXXL 

2 

2 

0 

186 

1,934 

359,740 

6 

6 

0 

483 

1,424 

687,671 

1 

1 

0 

45 

1,025 

46,125 

®

Jan. 1, 2002 

P. 159 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17VXX, XC18VXX, XC95XXX/XL 

Various 

150C 

XC17VXX XC18VXX XC95XXX XC95XXXXL 

2 

2 

0 

43 

2,060 

88,569 

5 

5 

0 

163 

1,544 

251,614 

9 

9 

0 

507 

1,464 

742,072 

4 

4 

0 

335 

1,534 

513,920 

®

Jan. 1, 2002 

P. 160 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXXE 

PD-8 

150C 


2 

2 

0 

186 

1,934 

359,740 

2 

2 

0 

186 

1,934 

359,740 

®

Jan. 1, 2002 

P. 161 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17XXL 

PD-8, VQFP-44 

150C 

XC1701L XC1704L XC17XXL 

3 

3 

0 

134 

1,008 

135,105 

1 

1 

0 

141 

794 

111,954 

4 

4 

0 

275 

898 

247,059 

®

Jan. 1, 2002 

P. 162 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17SXXXL 

PD-8 

150C 

XC17S150XL XC17SXXXL 

1 

1 

0 

45 

1,025 

46,125 

1 

1 

0 

45 

1,025 

46,125 

®

Jan. 1, 2002 

P. 163 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC17VXX 

VQFP-44 

150C 


1 

1 

0 

22 

1,062 

23,364 

1 

1 

0 

21 

3,105 

65,205 

2 

2 

0 

43 

2,060 

88,569 

®

Jan. 1, 2002 

P. 164 



Failures: 







Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC18VXX 

VQFP-44, SOIC-20, PLCC-20, 44 

150C 


3 

3 

0 

88 

1,798 

158,224 

3 

3 

0 

119 

1,155 

156,970 

6 

6 

0 

207 

1,429 

295,702 

®

Jan. 1, 2002 

P. 165 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

PLCC- 44, PQFP-160, HQFP-208 

150C 

XC95108 XC95144 XC9536 XC95288 XC95XXX 

2 

2 

0 

66 

1,711 

112970 

1 

1 

0 

44 

1,000 

44,000 

3 

3 

0 

226 

1,815 

410,106 

1 

1 

0 

21 

2,101 

44,121 

7 

7 

0 

357 

1,305 

466,007 

®

Jan. 1, 2002 

P. 166 



Failures: 








Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXXL 


150C 

XC9536XL XC9572XL XC95288XL XC95XXXXL 

2 

2 

0 

183 

1,139 

208,400 

1 

0 

0 

76 

2,010 

152,760 

2 

2 

0 

98 

2,008 

196,760 

5 

5 

0 

357 

1,563 

557,920 

®

Jan. 1, 2002 

P. 167 



Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC18VXX 

PLCC- 44 

85C 


1 

1 

0 

60 

10,000 

600,000 

1 

1 

0 

60 

10,000 

600,000 

®



Jan. 1, 2002 

P. 168 

Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

PLCC- 84 

55C 

XC9536 XC95108 XC95XXX 

1 

1 

0 

29 

10,000 

290,000 

1 

1 

0 

80 

10,939 

875,120 

2 

2 

0 

109 

10,689 

1,165,120 

®



Jan. 1, 2002 

P. 169 

Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

PLCC- 84, PC44 

85C 

XC9536 XC9572 XC95XXX 

2 

2 

0 

48 

16,813 

807,008 

1 

1 

0 

28 

10,000 

280,000 

3 

3 

0 

76 

14,303 

10,807,008 

®

Jan. 1, 2002 

P. 170 



Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXX 

PLCC-44 

-40C 

XC9536 XC95XXX 

2 

2 

0 

64 

79,500 

5,088,000 

2 

2 

0 

64 

79,500 

5,088,000 

®

Jan. 1, 2002 

P. 171 



Failures: 





Erase Cycling 


Technology: 

Device Type: 

Package Type: 


Si Gate CMOS 

XC95XXXXL 

PQFP-160 

-40C 


1 

1 

0 

21 

20,000 

420,000 

1 

1 

0 

21 

20,000 

420,000 

®

Jan. 1, 2002 

P. 172 

Package 

Qualification 

& 

Monitor 

Program

Jan. 1, 2002 

P. 173 


Package Qualification / Monitor 

PD-8 

Device Type: 

Package Type: 

Die Attach Material: 

Molding Compound: 

XC1701L, XC17256E 

PD8 

Silver Epoxy 

Sumitomo 6300H & Shenitsu KMC-1805 

Reliability Combined Device Mean Test Total 

Test No. Lots Failures On Test Hrs/Cycles Device Hrs/Cycles 

Temperature Cycle 

Pressure Pot 

85/85 

Solderability 

Resistance to Solvents 

Lead Fatigue 

Physical Dimension 

2 

3 

3 

3 

3 

3 

3 

0 

0 

0 

0 

0 

0 

0 

90 

135 

135 

9 

9 

10 

15 

1,068 

96 

1,169 

96,075 

12,960 

157,815 

®

Jan. 1, 2002 

P. 174 



SOIC 

Device Type: 

Package Type: 



XC1701, XC17V01, XC18V01, XCR22V10 

SOIC-20, 24 

Silver Epoxy 

EME6300H, MP8000-CH4 


Test No.Lots Failures On Test Hrs/Cycles Device Hrs/Cycles 


Pressure Pot 

85/85 

Solderability 

Lead Fatigue 



Bond Pull 

4 

5 

3 

1 

1 

3 

2 

4 

0 

0 

0 

0 

0 

0 

0 

0 

269 

248 

164 

3 

4 

15 

6 

20 

867 

143 

1,084 

233,144 

35,400 

177,827 

®

Jan. 1, 2002 

P. 175 



TSOP 

Device Type: 

Package Type: 



XC17S20, XC17V01, XCR22V10 

VO8, VO24 

Silver Epoxy 

KMC 184-3, MP8000-CH4 




Pressure Pot 

85/85 

Solderability 



Lead Fatigue 

Bond Pull 

4 

4 

1 

1 

3 

1 

1 

2 

0 

0 

0 

0 

0 

0 

0 

0 

272 

271 

45 

3 

15 

3 

3 

10 

1,031 

96 

1,004 

280,445 

26,016 

45,180 

®

Jan. 1, 2002 

P. 176 



PLCC-44 

Device Type: 

Package Type: 



XC9536, XC9572, XC1704L, XC17V16, 18V04, 

XCR3064XL, XCR3032XL 

PLCC- 44 

Silver Epoxy 

Sumitomo 6300H, MP8000 


Test No. Lots Failures On Test Hrs/Cycles Device Hrs/cycles 


Pressure Pot 


Bond Pull 

Die Shear 

23 

17 

1 

1 

1 

0 

0 

0 

0 

0 

1,376 

1,054 

5 

3 

3 

967 

119 

1,330,032 

125,808 

®

Jan. 1, 2002 

P. 177 



PLCC-84 

Device Type: 

Package Type: 



XC4010XL, XC9572 

PLCC- 84 

Silver Epoxy 

Sumitomo 6300H, MP8000 




Pressure Pot 

85/85 

Solderability 


Lead Fatigue 


Bond Pull 

3 

2 

1 

2 

2 

2 

2 

1 

0 

0 

0 

0 

0 

0 

0 

0 

197 

90 

46 

6 

6 

6 

10 

5 

813 

96 

1,006 

160,140 

8,640 

45,270 

®

Jan. 1, 2002 

P. 178 



PQFP-100 

Device Type: 

Package Type: 



XC9572 

PQFP- 100 

Silver Epoxy 

Sumitomo 6300H, EME-7304LC, E7N36 & MP8000 


Test No. Lots Failures On Test Hrs/Cycles Device Hrs/Cycles 


Pressure Pot 

3 

3 

0 

0 

228 

226 

1,019 

168 

232,332 

37,968 

®

Jan. 1, 2002 

P. 179 



PQFP-160 

Device Type: 

Package Type: 



XC95216, XC95108, XC4006E 

PQFP- 160 

Silver Epoxy 





85/85 

Die Shear 


Bond Pull 

Salt Atmosphere 

2 

1 

1 

1 

1 

1 

0 

0 

0 

0 

0 

0 

91 

76 

5 

3 

5 

15 

1,064 

1,071 

85,366 

81,376 

®

Jan. 1, 2002 

P. 180 



PQFP-208 

Device Type: 

Package Type: 



XCS30XL, XCS40XL, XC2S150, XC4010E, XC95288XL 

XC4013, XCR3384XL, XCR3364XL 

PQFP- 208 

Silver Epoxy 




Temperature cycle 

Pressure Pot 

Hast 

Solderability 

Bond Pull 

Lead Fatigue 


Mark Permaanency 


24 

3 

1 

1 

1 

1 

1 

1 

1 

0 

0 

0 

0 

0 

0 

0 

0 

0 

1,259 

126 

15 

3 

5 

3 

15 

3 

5 

1,039 

129 

100 

1,307,509 

16,296 

1,500 

®

Jan. 1, 2002 

P. 181 



PQFP-240 

Device Type: 

Package Type: 



XC4020XL,XC4013/XL/XLA, XCS30XL, XC2S150 

XCV300/E/EA, XCV100, XCV200E 

PQFP- 240 

Silver Epoxy 





Pressure Pot 

Hast 

85/85 

Solderability 


Lead Fatigue 



Bond Pull 

Die Shear 

12 

5 

6 

2 

5 

5 

4 

3 

1 

3 

1 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

601 

175 

293 

82 

15 

15 

12 

15 

15 

15 

5 

1,040 

113 

100 

1,114 

624,821 

19,752 

29,300 

91,377 

®

Jan. 1, 2002 

P. 182 



TQFP 

Device Type: 

Package Type: 



XC4010XL, XC9572, XC95144XL, XC2S50 

XCS30/XL, XCR3256XL, XCV100, XC3090A 

TQFP- 100, 144 & 176 

Silver Epoxy 

EME-7320, E7N32 




Pressure Pot 

85/85 

Solderability 


Lead Fatigue 


Bond Pull 

12 

6 

2 

3 

3 

1 

3 

1 

0 

0 

0 

0 

0 

0 

0 

0 

Die shear 1 

0 

5 

® 

674 

338 

56 

9 

9 

3 

15 

5 

1,020 

145 

906 

667,351 

48,864 

50,747

Jan. 1, 2002 

P. 183 



VQFP 

Device Type: 

Package Type: 



XCS30/XL, XC9536/XL, XC1V716 

XC18V04, XCR5064, XCR3032XL 

VQFP- 44, 64, 100 

Silver Epoxy 

EME-7320 


Test No.Lots Failures On Test Hrs/Cycles Device Hrs/cycles 


Pressure Pot 

85/85 


Lead Fatigue 


Solderability 

Die shear 

13 

3 

7 

4 

3 

2 

3 

1 

1* 

0 

0 

0 

0 

0 

0 

0 

1,090 

197 

381 

12 

9 

10 

9 

5 

575 

96 

895 

*F/A00154(2)-ASL 

626,505 

18,912 

341,151 

®

Jan. 1, 2002 

P. 184 



HQFP 

Device Type: 

Package Type: 



XC4020E, XC4028EX, XC4028XLA 

XC4062XLA, XC95216, XC95288 

XCV300, XCV800,XCV1000/E, XCV400A 

HQFP- 240 

84-1LMSR4 

Sumitomo 7304L 




Pressure Pot 

Hast 

85/85 


Lead Fatigue 


Solderability 

8 

5 

2 

3 

3 

3 

4 

4 

2 ** 

0 

0 

1* 

0 

0 

0 

0 

391 

252 

69 

135 

9 

9 

20 

12 

995 

109 

100 

1,051 

389,069 

27,432 

6,900 

141,901 

** F/A-00173(2)-CRCP@1101cy. 

* F/A01086(1)-NDF 

®

Jan. 1, 2002 

P. 185 



PPGA 

Device Type: 

Package Type: 


Sealant Material: 

XC3190/A 

PPGA-132, 175 

Silver Epoxy 

R4785 




Pressure Pot 

85/85 

Solderability 

Lead Fatigue 


Bond Strength 

Die shear 

1 

2 

2 

2 

2 

2 

1 

1 

0 

0 

0 

0 

0 

0 

0 

0 

45 

90 

89 

6 

6 

10 

5 

5 

1,060 

96 

1,005 

47,700 

8,640 

89,441 

®

Jan. 1, 2002 

P. 186 



HTFP 

Device Type: 

Package Type: 



XC4013XL 

HT-144 

Silver Epoxy 

7320CR 




Pressure Pot 

85/85 



Lead Integrity 

Solderability 

1 

1 

1 

1 

1 

1 

1 

0 

0 

0 

0 

0 

0 

0 

44 

44 

44 

3 

5 

2 

3 

1,025 

96 

1,052 

45,100 

4,224 

46,288 

®

Jan. 1, 2002 

P. 187 



BGA-256 

Device Type: 

Package Type: 


XC4013XL, XC4020XL/XLA, XC4028XLA, 

XCS40XL 

BGA-256, 

Silver Epoxy 




Pressure Pot 

Ball Shear 


Mark Permanency 

Bond Pull 


Note: Test condition for T/C was -55C/+125C 

7 

1 

1 

1 

2 

1 

2 

0 

0 

0 

0 

0 

0 

0 

223 

14 

1 

15 

6 

1 

10 

1,027 

96 

229,126 

1,344 

®

Jan. 1, 2002 

P. 188 



BGA-352 

Device Type: 

Package Type: 


XC4036XL,XC4028XLA,XCV300, XCV150, XC95288 

BGA-432 

Silver Epoxy 




Pressure Pot 





4 

1 

1 

1 

1 

0 

0 

0 

0 

0 

156 

45 

15 

5 

9 

1,001 

96 

156,180 

4,320 

®

Jan. 1, 2002 

P. 189 



BGA-432 

Device Type: 

Package Type: 


XC4044XL, XC4052XL, XC4062XL/XLA, 

XC4085XLA, XCV600, XCV300 

BGA- 432 

Silver Epoxy 




Pressure Pot 

85/85 


Ball Shear 

Bond Pull 




6 

2 

2 

4 

6 

6 

4 

1 

0 

0 

0 

0 

0 

0 

0 

0 

247 

90 

78 

20 

30 

30 

12 

15 

1,013 

96 

1,028 

250,222 

8,640 

80,220 

®

Jan. 1, 2002 

P. 190 



BGA-388 

Device Type: 

Package Type: 


XCCACEM16 

BGA- 388 

N/A 





3 0 94 1,030 96,816 

®

Jan. 1, 2002 

P. 191 



BGA-560 

Device Type: 

Package Type: 


XC4062XLA, XC4085XL/XLA, XCV400, XCV600 

XCV800, XCV1000/A, XCV1000E, XCV2000E 

BGA-560 

Silver Epoxy 




Pressure Pot 

85/85 

Hast 


Bond Pull 

Ball Shear 




16 

8 

5 

1 

2 

6 

6 

4 

2 

0 

0 

0 

0 

0 

0 

0 

0 

0 

475 

256 

110 

22 

6 

30 

30 

20 

18 

1,044 

96 

1,060 

100 

496,046 

24,576 

116,640 

2,200 

®

Jan. 1, 2002 

P. 192 



BGA-728 

Device Type: 

Package Type: 


XCV1000E, XCV2000E 

BGA-728 

8510AA 




Pressure Pot 

Hast 

85/85 

Bond Pull 

Ball Shear 


4 

1 

1 

1 

1 

1 

1 

0 

0 

0 

0 

0 

0 

0 

65 

29 

21 

32 

5 

5 

3 

1,076 

168 

102 

1,148 

69,965 

4,872 

2,142 

36,740 

®

Jan. 1, 2002 

P. 193 



CS-48 

Device Type: 

Package Type: 


XC9536, XCR3032XL, XCR3064XL 

CS-48, 

Silver Epoxy 



T/C 

Pressure Pot 

85/85 




3 

4 

1 

1 

1 

0 

0 

0 

0 

0 

202 

106 

43 

3 

5 

1,008 

96 

1,035 

203,646 

10,176 

44,505 

®

Jan. 1, 2002 

P. 194 



CP-56 

Device Type: 

Package Type: 


XCR3064A 

CP-56 

Silver Epoxy 



T/C 

Hast 

Ball Shear 


Bond Pull 


1 

1 

1 

1 

1 

0 

0 

0 

0 

0 

70 

4 

5 

5 

5 

1,000 

100 

70,000 

4,400 

®

Jan. 1, 2002 

P. 195 



CS-144, 280 

Device Type: 

Package Type: 


XC95144XL, XC95288XL, XCV100,XCV200E, 

XCS40XL, XCR3128XL, XCR3256XL 

CS -144, -280 

Silver Epoxy 



T/C 

Pressure Pot 

Hast 

85/85 



Ball Shear 

Bond Pull 

Die Shear 


5 

2 

1 

3 

2 

3 

5 

5 

1 

0 

0 

0 

0 

0 

0 

0 

0 

0 

343 

114 

22 

143 

8 

15 

25 

25 

4 

1,018 

122 

100 

1,041 

349,344 

13,896 

2,200 

148,799 

®

Jan. 1, 2002 

P. 196 



FG-256 

Device Type: 

Package Type: 


XCV200, XCV50/E, XC2S100, XC2V1000 

FG-256 

Silver Epoxy 




Pressure Pot 

Hast 

85/85 



Bond Pull 

Ball Shear 



6 

2 

1 

2 

1 

3 

2 

2 

1 

0 

0 

0 

0 

0 

0 

0 

0 

0 

284 

121 

21 

94 

3 

15 

10 

10 

15 

1,018 

141 

100 

1,005 

289,062 

17,088 

2,100 

94,491 

®

Jan. 1, 2002 

P. 197 



FG-456, 556 

Device Type: 

Package Type: 


XCV300E, XCV200, XCV300, XCV1000 

FG-456, 556 

Silver Epoxy 



Temperature Cycles 

Pressure Pot 

Hast 



Bond Pull 

Ball Shear 

Die Shear 


9 

5 

2 

2 

1 

2 

1 

1 

0 

0 

0 

0 

0 

0 

0 

0 

308 

294 

30 

6 

5 

9 

5 

5 

1,009 

96 

100 

310,686 

28,320 

3,000 

®

Jan. 1, 2002 

P. 198 



FG-676 

Device Type: 

Package Type: 


XCV800, XCV600E 

FG-676 

Silver Epoxy 




Pressure Pot 


Ball Shear 

Bond Pull 


Die Shear 


5 

1 

1 

2 

2 

1 

1 

0 

0 

0 

0 

0 

0 

0 

333 

32 

3 

10 

10 

5 

5 

977 

96 

325,272 

3,072 

®

Jan. 1, 2002 

P. 199 



FG-680 

Device Type: 

Package Type: 


XCV600, XCV800, XCV1000/A, 


FG-680 

Silver Epoxy 




Pressure Pot 

85/85 

Hast 

Ball Shear 

Bond Pull 


Physical dimension 


5 

3 

2 

1 

2 

2 

1 

1 

0 

0 

0 

0 

0 

0 

0 

0 

170 

130 

53 

22 

10 

10 

3 

3 

1,048 

96 

1,050 

100 

189,196 

12,480 

54,355 

2,200 

®

Jan. 1, 2002 

P. 200 



FG-900 

Device Type: 

Package Type: 



FG-900 

Silver Epoxy 



T/C 

Hast 

Pressure Pot 


Ball Shear 

Bond Pull 




3 

3 

2 

2 

2 

2 

2 

1 

0 

0 

0 

0 

0 

0 

0 

0 

74 

66 

54 

6 

10 

10 

10 

3 

1,070 

100 

168 

79,190 

6,600 

9,072 

®

Jan. 1, 2002 

P. 201 



FG-1156 

Device Type: 

Package Type: 


XCV2000E, XCV3200EA 

FG-1156 

Silver Epoxy 




Hast 

Pressure Pot 

85/85 


Ball Shear 

Bond Pull 



6 

1 

2 

1 

1 

1 

1 

2 

0 

0 

0 

0 

0 

0 

0 

0 

113 

22 

40 

19 

3 

5 

5 

10 

940 

100 

136 

1,014 

106,188 

2,200 

5,424 

19,266 

®

Jan. 1, 2002 

P. 202 



FT-256 

Device Type: 

Package Type: 


XCR3384XL, XC2S200E, XC2S300E 

FT-256 

Silver Epoxy 




Pressure Pot 

Die Shear 

Ball Shear 

Bond Pull 



3 

3 

1 

1 

1 

2 

0 

0 

0 

0 

0 

0 

222 

222 

5 

5 

5 

10 

1,001 

96 

222,304 

21,312 

®

Jan. 1, 2002 

P. 203 



FF-1152, 1517 

Device Type: 

Package Type: 

XC2V3000, XC2V4000, XC2V6000, 

FF1152, FF1517 




85/85 

unbiased 85/85 

Die Shear 

Ball Shear 



Note: Test condition for T/C was -40C/+125C or 0C/+100C 

11 

5 

4 

1 

3 

4 

1 

0 

0 

1* 

0 

0 

0 

0 

285 

128 

96 

5 

15 

15 

15 

975 

1,030 

1,000 

*FA01121(1)PSD 

192,500 

131,776 

95,961 

®

Jan. 1, 2002 

P. 204 


PGA Package Qualification / Monitor 

PGA-84, -120, -132, -156, -175, -191, -223, -299, -475 

Combined Mean Hrs/Cycles Total 

Code Test Sample Failures Per Device Dev. Hours/Cycles 

B2 

B3 

B5 

D1 

D2 

D3 

D4 

D5 

D6 

D7 


Solderability 

Bond Strength 



Seal 

Thermal Shock 


Seal 

Visual Examination 

End-Point Elect. 

Parametrics 

Mechanical Shock 

Vibration, Var. Freq. 

Constant Accel. 

Seal 


End-Point Elec. Para. 


Seal 


Internal Water-Vapor Content 

Adhesion of lead finish 

72 

90 

94 

75 

21 

105 

105 

105 

21 

21 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

15 

100 

1,575 

10,500 

®

Jan. 1, 2002 

P. 205 


CB Package Qualification / Monitor 

CB-100, -164, -196, -228 


Code Test Sample Failures Per Device Dev. Hours/cycles 

B2 

B3 

B5 

D1 

D2 

D3 

D4 

D5 

D6 

D7 


Solderability 

Bond Strength 



Seal 

Thermal Shock 


Seal 



Parametrics 




Seal 




Seal 




67 

90 

71 

75 

15 

90 

75 

75 

15 

15 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

15 

100 

1,350 

9,000 

®

Jan. 1, 2002 

P. 206 


DD8 Package Qualification / Monitor 



B2 

B3 

B5 

D1 

D2 

D3 

D4 

D5 

D6 

D7 

D8 


Solderability 

Bond Strength 



Seal 

Thermal Shock 


Seal 



Parametrics 




Seal 




Seal 




Lead Torque 

30 

27 

36 

75 

21 

75 

75 

75 

15 

15 

25 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

15 

100 

1,125 

7,500 

®

Jan. 1, 2002 

P. 207 


Chip Scale (CC) Package Qualification / Monitor 



B2 

B3 

B5 

D1 

D2 

D3 

D4 

D5 

D6 

D7 

D8 


Solderability 

Bond Strength 



Seal 

Thermal Shock 


Seal 



Parametrics 




Seal 




Seal 




Lead Torque 

42 9 

12 

30 6 

30 

30 

30 

8 

12 

8 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

0 

15 

100 

450 

3,000 

®



Jan. 1, 2002 

P. 208 

Failures: 




EIAJ Temperature Soldering Heat Test 

Technology: 

Device Type: 

Package Type: 

Assembly: 

Pre-conditionning Test Condition: 

Test Duration: 

Solder Heat Temp.: 


Note : Solderability test applied to all leads 

Si-Gate CMOS 


PD8, SO20, VO8, VQ44 

AAPI 

T = 85C, R.H. = 85% 

240 hours 

350 +/- 10 degrees C 

3 + 0.5/-0 seconds 

XC17S20 XC17S40 XC17128E XC1702L XC17XXX 

1 

1 

0 

3 

1 

1 

0 

3 

1 

1 

0 

3 

1 

1 

0 

3 

4 

4 

0 

12 

®

Jan. 1, 2002 

P. 209 



Failures: 





Technology: 

Device Type: 

Package Type: 

Assembly: 






Si-Gate CMOS 

XC3XXX/A Microcircuit Group 

PLCC-44, VQFP-100 

Anam 

T = 85C, R.H. = 85% 

240 hours 

350 +/- 10 degrees C 

3 + 0.5/-0 seconds 

XC3030/A XC3042/A XC3XXX/A 

1 

1 

0 

3 

1 

1 

0 

3 

2 

2 

0 

6 

®

Jan. 1, 2002 

P. 210 



Failures: 





Technology: 

Device Type: 

Package Type: 

Assembly: 





Si-Gate CMOS 

XC4XXXE, XC4XXXXL, XC4XXXXLA Microcircuit Group 

PLCC- 84, PQFP-240, HQFP160, 304, HT-144 

Anam 

T = 85C, R.H. = 85% 

240 hours 

350 +/- 10 degrees C 

3 + 0.5/-0 seconds 

XC4003E XC4013E XC4085XLA XC4013XL XC4044XL XC4XXX 


1 

1 

0 

3 

1 

1 

0 

3 

1 

1 

0 

3 

1 

1 

0 

3 

1 

1 

0 

3 

5 

5 

0 

15 

®

Jan. 1, 2002 

P. 211 



Failures: 





Technology: 

Device Type: 

Package Type: 

Assembly: 






Si-Gate CMOS 


TQFP-176 

Anam 

T = 85C, R.H. = 85% 

240 hours 

350 +/- 10 degrees C 

3 + 0.5/-0 seconds 

XC5206 XC5XXX 

1 

1 

0 

3 

1 

1 

0 

3 

®

Jan. 1, 2002 

P. 212 



Failures: 




EIAJ Temperature Soldering Test 

Technology: 

Device Type: 

Package Type: 

Assembly: 





Rate: 

Si-Gate CMOS 


DD8, PLCC-20 

AAPI 

Steam Age 

1 hour min. 

230 +/- 5 degrees C 

3 +/- 1 seconds 

1 +/- 0.1 in./sec. 

XC 17256D XC17XXX 

Note : Solderability test applied to the number of leads LTPD 10, 22 leads accept on0 

2 

2 

0 

8 

2 

2 

0 

8 

®

Jan. 1, 2002 

P. 213 



Failures: 




EIAJ Temperature Soldering Test 

Technology: 

Device Type: 

Package Type: 

Assembly: 





Rate: 

Si-Gate CMOS 


PQ-160,240, VQFP-100, HQFP-304 

Anam 

Steam Age 

1 hour min. 


3 +/-1 seconds 

1 +/- 0.1 in.sec 

XC4005XL XC4044XL XC4013XLA XC4XXX 

1 

1 

0 

4 


1 

1 

0 

3 

2 

2 

0 

7 

4 

4 

0 

14 

®

Jan. 1, 2002 

P. 214 



Failures: 




Low Temperature Soldering Heat Test 

Technology: 

Device Type: 

Package Type: 

Steam Age: 

Flux: 


Si-Gate CMOS 


PLCC-20, DD-8 

2 hours 

RMA 


XC17256D XC17XXX 


2 

2 

0 

8 

2 

2 

0 

8 

®

Jan. 1, 2002 

P. 215 



Failures: 




Low Temperature Soldering Heat Test 

Technology: 

Device Type: 

Package Type: 

Steam Age: 

Flux: 


Si-Gate CMOS 

XC4XXX Microcircuits Group 

PQFP-160,240, PLCC-84, HQFP-304, VQFP-100 

2 hours 

RMA 


XC4005XL XC4044XL XC4013XLA XC4XXX 

2 

2 

0 

7 


1 

1 

0 

3 

2 

2 

0 

6 

5 

5 

0 

16 

®

Jan. 1, 2002 

P. 216 

Board Level 

Reliability Test 

FG676, FG680, FG860, & FG1156 

®

Package Details 

Motherboard Design & Assembly Details 

– 4 Layer, FR-4, 1.6mm Thick, OSP Finish 

– 0.38mm Pad Diameter/0.53mm Solder Mask Opening (NSMD Pads) 

– 0.20mm SS Laser Cut Stencil, 0.43mm Aperture Opening, No Clean Paste 

Test Conditions 

– TC1 : -40125 o C, 15 minutes ramps,15 minutes dwells, 1 cycle/hour 

– TC2 : -55125 o C, 3 minutes ramps,12 minutes dwells, 2 cycles/hour 

– TC3 : 0 100 o C, 10 minutes ramps, 5 minutes dwells, 2 cycles/hour 

Failure Criteria 

– Continuous Scanning of Daisy Chain Nets (Every 2 minutes) 

– Threshold Resistance: 500 ohms 

– OPEN: An Event with Resistance of Net > Threshold Resistance 

– FAIL: At Least 2 OPENs within a Temperature Cycle 

– Log 15 FAILURES for each Net 

Jan. 1, 2002 

P. 217 

Package Size I/O Pitch Ball Size 

Pad 

Opening 

Pad 

Type 

Die Size Substrate 

FG860 (SBGA) 42.5x42.5 860 1.0 0.6 0.48 SMD 22.45x21.44x0.3 0.98 Thk, 3 Layer 

FG1156 (PBGA) 35x35 1156 1.0 0.6 0.48 SMD 23.11x21.13x0.3 0.56 Thk, 4 Layer 


FG680 (SBGA) 40x40 680 1.0 0.6 0.48 SMD 20.3x20.3x0.3 0.98 Thk, 3 Layer 

All Dimensions in mm 

2nd Level Reliability Test 

Xilinx FG676, FG680, FG860, &FG1156 

®

Summary of Test Results 

Jan. 1, 2002 

P. 218 

Package 

2nd Level Reliability Test 

Xilinx FG676, FG680, FG860, &FG1156 

Test 

Condition 

Cycles 

Completed 

# Tested # Failed 

1st 

Failure 

(cycles) 

Mean Life 

(cycles) 

FG676 TC1 2112 32 27 1341 1830 

FG676 TC2 2126 32 26 1434 1788 

FG676 TC3 13850 32 15 5909* 9267 

FG680 TC1 5222 29 20 4219 4796 

FG680 TC2 3960 32 16 2883 3891 

FG680 TC3 10570 32 0 N/A N/A 

FG860 TC3 8824 32 0 N/A N/A 

FG1156 TC1 3108 32 30 1601 2386 

FG1156 TC2 2507 48 32 1666 2256 

FG1156 TC3 8824 32 8 7289 9350 

* First failure 

All Packages Passed at least 1000 cycles of TC1 & TC2 Conditions 

®

Package 

Motherboard 

Jan. 1, 2002 

P. 219 

2nd Level Reliability Test - FG676 (PBGA) 


– 1.6mm Thick 

– 0.38mm Pad NSMD 

Test Data 

– Failures Primarily 

Around Die Edge 

– No Significant 

Difference Between 

TC1 and TC2 

Results 

Pad 

Opening 

Pad 

Type 




Package 

Cumulative % Failed 

Test 

Condition 

99.0 

50.0 

10.0 

5.0 

1.0 

Cycles 

Completed 

FG676 

500.0 5000.0 

Cycles to Failure 

β1=9.3, η1=1896.5, ρ=1.0 

β2=12.6, η2=1852.2, ρ=1.0 


Weibull 

TC1 

TC2 

1st 

Failure 

(cycles) 

Mean Life 

(cycles) 

FG676 TC1 2112 32 27 1341 1830 

FG676 TC2 2126 32 26 1434 1788 

FG676 TC3 13850 32 15 5909 9267 

®

Package 

Motherboard 

Jan. 1, 2002 

P. 220 

2nd Level Reliability Test - FG680 (SBGA) 




Test Data 

– TC2 is 1.25X More 

Damaging 


99.0 

50.0 

10.0 

5.0 

1.0 

FG680 

1000.0 10000.0 


β1=22.6, η1=4913.2, ρ=1.0 

β2=9.9, η2=4092.2, ρ=1.0 

Pad 

Opening 

Pad 

Type 


FG680 (SBGA) 40x40 680 1.0 0.6 0.48 SMD 20.3x20.3x0.3 0.98 Thk, 3 Layer 


Package 

Test 

Condition 

Cycles 

Completed 


Weibull 

TC1 

TC2 

1st 

Failure 

(cycles) 

Mean Life 

(cycles) 

FG680 TC1 5222 29** 20 4219 4796 

FG680 TC2 3960 32 16 2883 3891 

FG680 TC3 10570 32 0 N/A N/A 

®

Package 

Motherboard 

Jan. 1, 2002 

P. 221 

2nd Level Reliability Test - FG1156 (PBGA) 



Test Data 


Failures Primarily 

Underneath the Die 

Pad 

Opening 

Pad 

Type 




Package 

Test 

Condition 

Cycles 

Completed 


1st 

Failure 

(cycles) 

Mean 

Life 

(cycles) 

FG1156 TC1 3108 32 30 1601 2386 

FG1156 TC2 2507 48 32 1666 2256 

FG1156 TC3 8824 32 8 7289 9350 

FG1156 


99.0 

90.0 

50.0 

10.0 

5.0 

1.0 

1000.0 10000.0 


β1=8.91, η1=2521.74, ρ=0.99 

β2=19.45, η2=2319.62, ρ=0.89 

β3=14.88, η3=9684.74, ρ=0.98 

Weibull 

TC1-Die Region 

W2 RRX -SRM MED 

F=30 / S=2 



F=32 / S=16 



F=6 / S=26 

®

• Package 

Jan. 1, 2002 

P. 222 

2nd Level Reliability Test - FG860 (SBGA) 


Pad 

Opening 

Pad 

Type 


FG860 (SBGA) 42.5x42.5 860 1.0 0.6 0.48 SMD 22.45x21.44x0.3 0.98 Thk, 3 Layer 


• Motherboard 



Package 

Test 

Condition 

Cycles 

Completed 


1st 

Failure 

(cycles) 

Mean Life 

(cycles) 

FG860-1 TC3 8824 32 0 N/A N/A 

®

Xilinx Reliability Monitor Report - Quarter 4 CY 2001

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