A Wavelength Converter Integrated with a Discretely Tunable Laser ...
A Wavelength Converter Integrated with a Discretely Tunable Laser ...
A Wavelength Converter Integrated with a Discretely Tunable Laser ...
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3.2 Amplification in SOAs 21<br />
Table 3.1: Density of states in different types of active layers. denotes the thickness of<br />
the quantum well, and is the effective mass of the carrier.<br />
Material Bulk Quantum Well<br />
Dimension 3D 2D<br />
Density<br />
of states <br />
<br />
¦<br />
¦ ¦ <br />
<br />
<br />
A transition from the conduction band to the valence band, or visa versa, is restricted by the<br />
conservation of both energy and momentum (k-selection rule),<br />
or ¦<br />
, which is indicated in the figure by the vertical transition line. Combining<br />
Eq. 3.3 and 3.4 we find for the photon energy<br />
¦ <br />
<br />
<br />
<br />
¦ ¦<br />
<br />
<br />
<br />
¦ (3.4)<br />
where denotes the reduced mass. The density of transition pairs, i.e. the reduced density of<br />
states, , follows from<br />
E FN<br />
E 2<br />
E c<br />
E v<br />
E 1<br />
EFP E g<br />
E ph<br />
E<br />
conduction band<br />
E+dE<br />
E<br />
valence band<br />
k<br />
¤<br />
<br />
number of<br />
states= ρ(E)dE<br />
¤ <br />
<br />
E<br />
a) b)<br />
<br />
¤<br />
<br />
ρc<br />
MQW<br />
(3.5)<br />
ρ<br />
ρcbulk<br />
ρv<br />
MQW<br />
Figure 3.1: a) Energy of the electron states as a function of their momentum. The shaded<br />
areas indicate the energy levels for which the probability that the state is occupied by an<br />
electron is more than 50%. b) Density of states versus energy for bulk and MQW material<br />
The shaded areas denote the states in bulk that are occupied <strong>with</strong> a probability of more than<br />
50%.<br />
eV<br />
E FN<br />
E c<br />
E F<br />
E v<br />
E FP<br />
ρv<br />
bulk