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Spin-orbit coupling and electron-phonon scattering - Fachbereich ...

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Chapter 2<br />

Rashba spin-<strong>orbit</strong> <strong>coupling</strong> in<br />

quantum wires<br />

In the previous chapter, we have introduced the Rashba effect as a consequence of<br />

spin-<strong>orbit</strong> (SO) interaction in two-dimensional (2D) <strong>electron</strong> systems with dominating<br />

structure-inversion asymmetry.<br />

In general, SO interaction couples the spin of a particle to its <strong>orbit</strong>al motion.<br />

In mesoscopic systems, the latter can easily be modified by means of geometrical<br />

confinement, e. g. due to external gate voltages.<br />

In the following, we want to illustrate how effects of SO <strong>coupling</strong> are modified<br />

by further constraining the motion of the <strong>electron</strong> in a single spatial direction<br />

by considering a quasi-one-dimensional system which is defined in the 2DEG.<br />

Similar to the Rashba effect, every electric field – <strong>and</strong> thus also the confining<br />

fields – may lead to a <strong>coupling</strong> between spin <strong>and</strong> momentum, see Eq. (1.1). These<br />

additional contributions to the SO <strong>coupling</strong> might become important when the<br />

lateral confinement is comparable to the vertical constraint that defines the 2DEG.<br />

This is the case in wires made by the cleaved-edge overgrowth technique [34]<br />

where both lateral <strong>and</strong> vertical confinement are typically of the order of ∼10nm.<br />

A further example where a full three-dimensional description of the SO <strong>coupling</strong><br />

might be necessary are molecular systems like carbon nanotubes [35, 36].<br />

Throughout this chapter, we restrict ourselves to ballistic quasi-one-dimensional<br />

<strong>electron</strong> systems whose lateral confinement is assumed to be much weaker than<br />

the vertical constraint of the 2DEG. This condition is usually fulfilled in quantum<br />

wires defined by external gates <strong>and</strong> etching, leading to a lateral width ≥ 100nm.<br />

We describe such a quantum wire by including a parabolic confining potential<br />

V c ∝ x 2 into the model for the 2D system [Eq. (1.3)].<br />

In the following section, we present the scientific publication which comprises<br />

our main results for the interplay of SO <strong>coupling</strong> <strong>and</strong> lateral confinement in quan-<br />

15

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