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Thesis High-Resolution Photoemission Study of Kondo Insulators ...

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114 Chapter 8. Temperature and Al-Substitution Dependence <strong>of</strong> the ...<br />

ρ (m Ω cm)<br />

2.0<br />

1.5<br />

1.0<br />

0.5<br />

0<br />

x = 0.02<br />

x = 0.05<br />

x = 0.10<br />

50<br />

x = 0.30<br />

100<br />

x = 0.00<br />

150<br />

T (K)<br />

FeSi 1-x Al x<br />

200<br />

250<br />

300<br />

Figure 8.2: Electrical resistivities <strong>of</strong> FeSi1−xAlx polycrystals [8.8].<br />

<strong>of</strong> Fe1−xCoxSi, is (i) the extended measurement temperature range down to 7 K, (ii)<br />

the improved pressure in the spectrometer, and (iii) the higher energy resolution. The<br />

sample surface was scraped in the ultrahigh vacuum. The base pressure was in the<br />

10 −11 Torr range and remained in the 10 −10 Torr range even with the He lamp working,<br />

which is 10 times better than that <strong>of</strong> the previous system. We evaporated Au on the<br />

measured samples to determine the Fermi level (EF ) and the instrumental resolution.<br />

The energy resolution for He I spectra was 14-16 meV. The satellite lines are much weak<br />

compared with the He I line for the VG lamp, but before dividing the spectra by the<br />

Fermi-Dirac (FD) function we have subtracted the background systematically following<br />

the procedure described in Chap. 2 to deal with a slight change in the spectral DOS.

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