Thesis High-Resolution Photoemission Study of Kondo Insulators ...
Thesis High-Resolution Photoemission Study of Kondo Insulators ...
Thesis High-Resolution Photoemission Study of Kondo Insulators ...
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114 Chapter 8. Temperature and Al-Substitution Dependence <strong>of</strong> the ...<br />
ρ (m Ω cm)<br />
2.0<br />
1.5<br />
1.0<br />
0.5<br />
0<br />
x = 0.02<br />
x = 0.05<br />
x = 0.10<br />
50<br />
x = 0.30<br />
100<br />
x = 0.00<br />
150<br />
T (K)<br />
FeSi 1-x Al x<br />
200<br />
250<br />
300<br />
Figure 8.2: Electrical resistivities <strong>of</strong> FeSi1−xAlx polycrystals [8.8].<br />
<strong>of</strong> Fe1−xCoxSi, is (i) the extended measurement temperature range down to 7 K, (ii)<br />
the improved pressure in the spectrometer, and (iii) the higher energy resolution. The<br />
sample surface was scraped in the ultrahigh vacuum. The base pressure was in the<br />
10 −11 Torr range and remained in the 10 −10 Torr range even with the He lamp working,<br />
which is 10 times better than that <strong>of</strong> the previous system. We evaporated Au on the<br />
measured samples to determine the Fermi level (EF ) and the instrumental resolution.<br />
The energy resolution for He I spectra was 14-16 meV. The satellite lines are much weak<br />
compared with the He I line for the VG lamp, but before dividing the spectra by the<br />
Fermi-Dirac (FD) function we have subtracted the background systematically following<br />
the procedure described in Chap. 2 to deal with a slight change in the spectral DOS.