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Thesis High-Resolution Photoemission Study of Kondo Insulators ...

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130 Chapter 9. Conclusion<br />

(a)<br />

FeSi (7 K)<br />

(b)<br />

- 5 eV<br />

FeSi Al (7 K)<br />

1-x x<br />

- 300 meV<br />

(c)<br />

FeSi<br />

- 50 meV<br />

FeSi Al<br />

1-x x<br />

- 50 meV<br />

~ 8 k T<br />

B max<br />

E F<br />

E F<br />

E F<br />

FeSi Al (7 K)<br />

1-x x<br />

FeSi (7 K)<br />

E F<br />

295 K<br />

7 K<br />

295 K<br />

7 K<br />

Figure 9.2: Schematic summary <strong>of</strong> the photoemission spectra <strong>of</strong> FeSi1−xAlx, which was<br />

studied in the wide x range compared with Fe1−xCoxSi: The entire valence band which<br />

has a broad peak (a), the substitution dependence near EF (b), and the temperature<br />

dependence <strong>of</strong> the pseudogap around EF (c).

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