Thesis High-Resolution Photoemission Study of Kondo Insulators ...

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2 Chapter 1. Introduction Figure 1.1: Schematic representation of the magnetic susceptibility (a) and the electrical resistivity (b) of a Kondo metal (thin curves) and a Kondo insulator (thick curves).
1.1. Kondo insulator and Kondo metal 3 such a Table was completed only in 1990’s. Since then, the formation of narrow gaps in these compounds has been extensively studied by using various probes. Among these compounds, CeNiSn with a orthorhombic structure has been found different from the other compounds and is sometimes referred as a Kondo semimetal. Table 1.1: Kondo insulators with their crystal structures, the activation energy (∆act) determined by transport measurements, and their semiconducting analogues without 4f elements, after [1.1]. Compound Structure ∆act (K) Non-f analogue CeNiSn ɛ-TiNiSn 3 TiNiSn CeRhSb ɛ-TiNiSn 7 TiNiSn Ce3Bi4Pt3 Y3Sb4Au3 42 Th3Sb4Ni3 Ce3Sb4Pt3 Y3Sb4Au3 475 Th3Sb4Ni3 CeFe4P12 LaFe4P12 1500 SmB6 CaB6 27 (SrB6) 1 SmS NaCl 300-3000 (SrS) TmSe NaCl - 2 (SrS) TmTe NaCl 3500 (SrS) YbB12 UB12 62 UFe4P12 LaFe4P12 170 U3Sb4Ni3 Y3Sb4Au3 1200 (Th3Sb4Ni3) U3Sb4Pd3 Y3Sb4Au3 1300 (Th3Sb4Ni3) U3Sb4Pt3 Y3Sb4Au3 900 (Th3Sb4Ni3) UNiSn MgAgAs 700 (ThNiSn) UPtSn MgAgAs 2000 (ThNiSn) 1 Parentheses indicate isostructural but not completely isoelectronic analogues. 2 An activation form does not fit well the electrical resistivity of TmSe. After the observation of the semiconducting behavior of the intermediate-valent compound SmB6, the hybridization gap model has been introduced for low-temperature properties of the Kondo insulator. The local moments of Kondo systems start to disappear on cooling through TK and a narrow f band is expected to be formed below
Page 1: Thesis High-Resolution Photoemissio
Page 4 and 5: ii CONTENTS 5.2 Experimental . . .
Page 8 and 9: 4 Chapter 1. Introduction Figure 1.
Page 10 and 11: 6 Chapter 1. Introduction peaks, wh
Page 12 and 13: 8 Chapter 1. Introduction only the
Page 14 and 15: 10 Chapter 1. Introduction directio
Page 16 and 17: 12 Chapter 1. Introduction activati
Page 18 and 19: 14 References [1.14] F. Iga, M. Kas
Page 21 and 22: Chapter 2 Photoemission Spectroscop
Page 23 and 24: 2.1. General Principles 19 Photoele
Page 25 and 26: 2.1. General Principles 21 where R(
Page 27 and 28: 2.2. Experimental 23 DOS Intensity
Page 29 and 30: 2.2. Experimental 25 Figure 2.5: Il
Page 31 and 32: 2.2. Experimental 27 baking out the
Page 33: References [2.1] O. Gunnarsson and
Page 36 and 37: 32 Chapter 3. Photoemission Study o
Page 48 and 49: 44 References the Kondo peak positi
Page 50 and 51: 46 Chapter 4. Evolution of Electron
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52 Chapter 4. Evolution of Electron
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References [4.1] G. Aeppli and Z. F
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References 61 [4.25] P. Weibel,M. G
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64 Chapter 5. Temperature Dependenc
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74 References [5.10] N. Shimizu, F.
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Chapter 6 Substitution and Temperat
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6.1. Introduction 79 Figure 6.2: Ma
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6.3. Results and Discussion 81 6.3
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6.3. Results and Discussion 83 DOS
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6.3. Results and Discussion 85 dist
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6.3. Results and Discussion 87 Apar
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6.3. Results and Discussion 89 of E
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6.3. Results and Discussion 91 the
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6.4. Summary 93 and consistent anal
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96 References [6.11] M. J. Rozenber
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98 Chapter 7. Temperature and Co-Su
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100 Chapter 7. Temperature and Co-S
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References [7.1] G. Aeppli and Z. F
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Chapter 8 Temperature and Al-Substi
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8.2. Experimental 113 and Fisk [8.2
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8.3. Results and Discussion 115 8.3
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8.3. Results and Discussion 117 Int
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8.3. Results and Discussion 119 dep
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8.3. Results and Discussion 121 σ
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8.4. Summary 123 temperature magnet
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126 References [8.14] T. Tonogai, A
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128 Chapter 9. Conclusion has shown
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130 Chapter 9. Conclusion (a) FeSi
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132 Chapter 9. Conclusion developed
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