Epitaxy and interface defects
Epitaxy and interface defects
Epitaxy and interface defects
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hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />
<strong>Epitaxy</strong> modes<br />
(a) (b) (c)<br />
Growth temperature (°C)<br />
Epitaxial nucleation modes in heteroepitaxy:<br />
a) layer-by-layer, b) Stranski–Krastanov, <strong>and</strong> c) clustered.<br />
Clustered growth<br />
Planar growth<br />
Germanium fraction x<br />
Measurements of clustered vs. layerby-layer<br />
growth in the Si 1 − x Ge x /Si<br />
(001) system for molecular beam<br />
epitaxy.<br />
[Bean et al. 1984]<br />
10
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