Epitaxy and interface defects
Epitaxy and interface defects
Epitaxy and interface defects
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hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />
Ripples<br />
Ripples in Si 0.97 Ge 0.03 on (001) Si. Liquid phase epitaxy.<br />
Light microscopy, Normarski differential interference contrast.<br />
Ripple amplitude 5.4 nm, layer thickness 150 nm, wavelength 11.7 µm.<br />
[Albrecht, Strunk: 1999]<br />
[010]<br />
[100]<br />
100 µm<br />
13
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