Epitaxy and interface defects
Epitaxy and interface defects
Epitaxy and interface defects
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2.4 The concept of critical thickness<br />
h crit thickness at which the self-energy of dislocation is equal to the strain energy<br />
Below h crit , formation of dislocations energetically unfavorable<br />
Frank–van der Merwe: calculation of density of <strong>interface</strong> dislocation from<br />
mathematical analysis of interfacial energy<br />
Matthews–Blakeslee: consideration of the stress on pre-existing, threading<br />
dislocations<br />
Dodson–Tsao: strain relaxation rates are kinetically limited, i. e. dislocation<br />
nucleation <strong>and</strong> growth rates have to be considered<br />
hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />
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