Epitaxy and interface defects
Epitaxy and interface defects
Epitaxy and interface defects
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Measurement of critical thickness<br />
Critical thickness (Å)<br />
Measurement of critical thickness in the Si 1 − x Ge x /Si (001) system<br />
for different growth temperatures vs. the prediction of the Matthews–Blakeslee model<br />
[Hull:94]<br />
hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />
Germanium fraction x<br />
Theory<br />
550 °C<br />
750 °C<br />
900 °C<br />
18
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