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Epitaxy and interface defects

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2.6 Configurations of misfit dislocations<br />

(a) (b)<br />

TEM images from an (001) In 0.1 Ga 0.9 As single heterostructure on (001) GaAs.<br />

a) Layer thickness of 100 nm, b) 200 nm.<br />

[Zou 2001]<br />

hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />

0.5 µm<br />

24

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