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Epitaxy and interface defects

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Basic models of homoepitaxy<br />

Energetic considerations:<br />

γ e + γ i ≤ γ s<br />

> γ s<br />

hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />

γ e<br />

γ i<br />

γ s<br />

Layer-by-layer growth<br />

(Frank–van der Merwe)<br />

2D growth + coalescence<br />

(Volmer–Weber)<br />

4

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