Epitaxy and interface defects

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2.4 The concept of critical thickness h crit thickness at which the self-energy of dislocation is equal to the strain energy Below h crit , formation of dislocations energetically unfavorable Frank–van der Merwe: calculation of density of interface dislocation from mathematical analysis of interfacial energy Matthews–Blakeslee: consideration of the stress on pre-existing, threading dislocations Dodson–Tsao: strain relaxation rates are kinetically limited, i. e. dislocation nucleation and growth rates have to be considered hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects 16
The Matthews–Blakeslee model Above the critical thickness, there is a driving force of dislocation motion in the interface due to the lattice mismatch. For h = h crit , σ t = σ f (σ t restoring stress due to the line tension of the dislocation, σ f stress due to the lattice mismatch) h < h h h = hh h > h > h crit crit crit crit crit hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects σ t σ f 17
Page 1 and 2: Hartmut S. Leipner: Structure of im
Page 3 and 4: hsl 2007 - Structure of imperfect m
Page 9 and 10: Stranski-Krastanov growth hsl 2007
Page 15: Modeling of misfit dislocations Wha
Page 21 and 22: (a) (b) 2.5 Sources of misfit dislo
Page 23 and 24: Compilation of Vdovin 1999 hsl 2007
Page 25 and 26: Alignment of misfit dislocations Mi
Page 27 and 28: Configuration of a dissociated misf

Epitaxy and interface defects

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