Epitaxy and interface defects
Epitaxy and interface defects
Epitaxy and interface defects
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hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />
The Dodson–Tsao model<br />
Relaxation of the epitaxial layer is controlled by thermal activation of dislocation<br />
glide processes<br />
Dislocation velocity (analogous bulk material)<br />
(σ eff effective driving stress in MPa, Q activation energy, υ 0 prefactor)<br />
Four stages of strain relaxation in the Dodson–Tsao model<br />
Residual strain<br />
I II III IV<br />
h crit<br />
Layer thickness<br />
19
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