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Epitaxy and interface defects

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Configuration of a dissociated misfit<br />

dislocation in a heterostructure<br />

hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />

5 nm<br />

A high-resolution TEM image of a cross-section sample of a InGaAs<br />

heterostructure showing a dissociated 60° misfit dislocation. The 90°<br />

partial is near the strained <strong>interface</strong>, while the 30° is in the substrate.<br />

[Zou 2001]<br />

27

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