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Epitaxy and interface defects

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hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />

Pseudomorphic growth<br />

Energetic considerations:<br />

γ e + γ i + E f h ≤ γ s<br />

Further growth:<br />

a) Elastic relaxation<br />

b) Plastic relaxation<br />

(E f h increases)<br />

> γ s<br />

Growth of closed layers<br />

(Frank–van der Merwe)<br />

▼<br />

a) 2D growth + coalescence<br />

(Volmer–Weber)<br />

b) Isl<strong>and</strong> growth on top of a wetting layer<br />

(Stranski–Krastanov)<br />

8

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