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Epitaxy and interface defects

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hsl 2007 – Structure of imperfect materials – <strong>Epitaxy</strong> <strong>and</strong> <strong>interface</strong> <strong>defects</strong><br />

Isl<strong>and</strong>s<br />

Scanning tunneling microscopy<br />

of CoO isl<strong>and</strong>s on a Ag substrate.<br />

The diameter of the isl<strong>and</strong><br />

amounts to about 6 – 8 nm. The<br />

layer thickness corresponds to 1,<br />

2, <strong>and</strong> 3 monolayers. Single<br />

atoms in the CoO can be<br />

resolved.<br />

[Widdra 2004]<br />

11

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