Epitaxy and interface defects

More documents

Recommendations

Info

Intensity (counts) 4000 3000 2000 1000 0 Anisotropic relaxation in compound semiconductors PL 1.6 K d = 495 nm 2 LOY 1 LOY Matrix luminescence 2.50 2.55 2.60 2.65 2.70 2.75 2.80 Photon energy (eV) Cathodoluminescence investigation of plastic relaxation in ZnSe/GaAs(001) heterostructures [Hilpert:2001] hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects Y Defect emission (D 0,X) h = 165 nm h = 495 nm h = 4200 nm FX h = 105 nm 100 µm 20
(a) (b) 2.5 Sources of misfit dislocations h > h crit h > h crit hsl 2007 – Structure of imperfect materials – Epitaxy and interface defects Multiplication mechanisms arising from dislocation pinning or interaction Heterogeneous nucleation at specific local stress concentrations, e. g. growth artifacts or substrate defects Homogeneous (spontaneous) nucleation of dislocation loops Generation of misfit dislocations from different sources: a) the pre-existing threading dislocation model and b) the half-loop generation from the free surface. [Zou:01] 21
Page 1 and 2: Hartmut S. Leipner: Structure of im
Page 3 and 4: hsl 2007 - Structure of imperfect m
Page 9 and 10: Stranski-Krastanov growth hsl 2007
Page 15 and 16: Modeling of misfit dislocations Wha
Page 17 and 18: The Matthews-Blakeslee model Above
Page 19: hsl 2007 - Structure of imperfect m
Page 23 and 24: Compilation of Vdovin 1999 hsl 2007
Page 25 and 26: Alignment of misfit dislocations Mi
Page 27 and 28: Configuration of a dissociated misf

Epitaxy and interface defects

Create successful ePaper yourself

Delete template?

Save as template?