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(21) on prolonging Sensornode Gataway Lifetime by Adapting its duty Cycle M. Brzozowski, p. langendörfer 7 th International Conference on Wired / Wireless Internet Communications (WWIC 2009), twente, May 27 - 29, 2009, the netherlands (22) design of Bipolar differential opAmps with unity Gain Bandwidth up to 23 GHz A. Budyakov, K. Schmalz, n.n. prokopenko, J.C. Scheytt, p. ostrovsky 4 th european Conference on Circuits and Systems for Communications (eCCSC‘08), Bucharest, July 10 - 11, 2009, Romania (23) Korngrenzenuntersuchungen an polykristallinen Si-Solarzellen mit einem Synchrotron-Mikrostrahl G. Buzanich, H. Riesemeier, M. Radtke, u. Reinholz, M. Kittler, W. Seifert Seminar Moderne analytische Methoden der physik, tu Berlin, november 17, 2009, Germany (24) Impact of Si Cap Layer Growth on Surface Segregation of p Incorporated by Atomic Layer doping Y. Chiba, M. Sakuraba, B. tillack, J. Murota 6 th International Conference on Silicon epitaxy and Heterostructures (ICSI-6), los Angeles, May 17 - 22, 2009, uSA (25) performance evaluation of Gbps oFdM pHy Layers for 60 GHz wireless LAN Systems Ch.-S. Choi, M. piz, F. Herzel, e. Grass Ieee International Symposium on personal, Indoor and Mobile Radio Communication (pIMRC), tokyo, September 13 - 16, 2009, Japan 08 A n n u A l R e p o R t 2 0 0 9 V o r t r ä G e – p r e S e N t A t I o N S (26) pushing Speed Limits of SiGe:C HBts up to 0.5 tHz S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, p. Chevalier, A. Chantre, t.F. Meister, K. Aufinger, M. Schröter 2009 Ieee Custom Integrated Circuits Conference (CICC), San Jose, September 13 - 16, 2009, uSA (27) Junction Isolation Single event Hardening of a 200 GHz SiGe:C HBt technology without deep trench Isolation R.M. Diestelhorst, S. phillips, A. Appaswamy, A.K. Sutton, J.D. Cressler, J.A. pellish, R.A. Reed, G. Vizkelethy, p.W. Marshal, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, B. tillack Ieee the nuclear and Space Radiation effects Conference (nSReC 09), Quebec, July 19 - 23, 2009, Canada (28) C-AFM Characterization of High-k dielectric Films Grown by Molecular Beam deposition p. Dudek, J. Dabrowski, G. Kozlowski, G. lupina, G. lippert, H.-J. Müssig DpG Frühjahrstagung Dresden, March 23, 2009, Germany (29) C-AFM Characterization of High-k dielectric Films Grown by Molecular Beam deposition p. Dudek, R. Schmidt, J. Dabrowski, G. Kozlowski, G. lippert, G. lupina, H.-J. Müssig nanoscale VII Conference, Santa Barbara, July 30, 2009, uSA (30) electronic Structure and dielectric properties of MBe Grown Hfo 2 based Alkaline earth perovskites p. Dudek, G. lupina, G. Kozlowski, J. Dabrowski, G. lippert, H.-J. Müssig, D. Schmeißer, t. Schroeder 5 th Workshop Advanced nanomaterials, Btu Cottbus, november 03, 2009, Germany
(31) MIMo radios for Next Generation wLANs R. eickhoff, F. ellinger, R. Kraemer, I. Santamaria electrical and electronic engineering for Communication (eeefCoM 2009), ulm, June 24 - 25, 2009, Germany (32) 60 GHz Impairments Modeling V. erceg, M. Messe, A. tarighat, M. Boers, J. trachewsky, Ch.-S. Choi Ieee 802.11 Meeting, Atlanta, november 2009, uSA (33) Analysis and optimization of pausible Clocking Based GALS design X. Fan, M. Krstic, e. Grass Ieee International Conference on Computer Design (ICCD), California, october 04 - 07, 2009, uSA (34) thermal Capacitance Cth - its determination and Influence on transistor and Circuit performance G.G. Fischer AK Bipolar, FH Würzburg, october 22, 2009, Germany (35) plasmachemische Strukturierung von Hfo 2 als MIM-dielektrikum M. Fraschke, H.H. Richter, M. lukosius, Ch. Wenger, D. Wolansky, St. Marschmeyer, I. Costina 14. Fachtagung plasmatechnologie, Wuppertal, March 02, 2009, Germany (36) theoretical Study on equilibrium Concentrations of Nitrogen-related defects in CZ and FZ Silicon n. Fujita, R. Jones, G. Kissinger XIII International Autumn Meeting Gettering and Defect engineering in Semiconductor technology (GADeSt 2009), Döllnsee, September 26 - october 02, 2009, Germany V o r t r ä G e – p r e S e N t A t I o N S (37) effect of Surface roughness and oxidation on evaluation of optical Constants of Silicides o. Fursenko, J. Bauer, I. Costina, G. Weidner 5 th ellipsometry Workshop, Zweibrücken, March 02 - 04, 2009, Germany (38) Cdp - Application of Focus drilling S. Geisler, J. Bauer, u. Haak, K. Schulz, G. old, e. Matthus the 25 th european Mask and lithography Conference (eMlC 2009), Dresden, January 12 - 15, 2009, Germany (39) Heteroepitaxial Integration of Single Crystalline Ge(111) Layers on Si(111) Substrates via Cubic pr oxide Buffers A. Giussani, p. Zaumseil, A. Schubert, G. Weidner, R. Kurps, D. Geiger, H. lichte, J. Wollschläger, p. Storck, t. Schröder HSC10: Synchrotron Radiation techniques Contribution to nanoscience, Grenoble, May 18 - 22, 2009, France (40) X-ray-based Structure Characterization of Ge(111) / Cubic pr 2 o 3 (111) / Si(111) Heterostructures A. Giussani, p. Zaumseil, G. Weidner, H.-J. Müssig, p. Storck, t. Schroeder e-MRS Spring Meeting, Strasbourg, June 08 - 12, 2009, France (41) eASy-A 60 GHz Broadband Links e. Grass BMBF Statusseminar, Dresden, June 19, 2009, Germany A n n u A l R e p o R t 2 0 0 9 09
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Annual Report 2009 A n n u A l R e
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Die Forschungsarbeiten des IHP erm
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I N H A L t S V e r Z e I C H N I S
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8 A n n u A l R e p o R t 2 0 0 9 F
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Die Forschungsprogramme haben die f
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Technologieplattform für drahtlose
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A n n u A l R e p o R t 2 0 0 9 d A
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Wissenschaftliche Ergebnisse Im Fol
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Ein erster sicherer Knoten für dra
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In Zusammenarbeit mit ESA und DLR w
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integrierten Wellenleitern konnten
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sind in der Automobilelektronik ein
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DFG Cluster - Antrag unter Beteilig
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28 A n n u A l R e p o R t 2 0 0 9
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Abb. 1: Die Architektur des MAC-Pro
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GALS-Interface für die Integration
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A n n u A l R e p o R t 2 0 0 9 A u
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6 A n n u A l R e p o R t 2 0 0 9 A
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TANDEM IR-UWB Kommunikation für dr
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122 GHz Empfänger in SiGe 0 A n n
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Strahlungsfester Frequenzsynthesize
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4 Bit, 16 GS /s Analog-Digital-Umse
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0,13-µm-BiCMOS-Technologie 6 A n n
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RF-MEMS Integration 8 A n n u A l R
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0 A n n u A l R e p o R t 2 0 0 9 A
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2 A n n u A l R e p o R t 2 0 0 9 A
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A n n u A l R e p o R t 2 0 0 9 A u
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TiN/HfO 2 /Ti/TiN MIM Strukturen f
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