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Deliverables and Services - IHP Microelectronics

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(75) Hf- <strong>and</strong> Zr-Based Alkaline earth pervoskite<br />

dielectrics for Memory Applications<br />

G. lupina, J. Dabrowski, G. Kozlowksi,<br />

p. Dudek, G. lippert, p. Zaumseil, H.-J. Müssig<br />

InFoS 2009, Cambridge,<br />

June 29 - July 1, 2009, uK<br />

(76) Integration of poly CMp with oxide CMp on<br />

200 mm AMAt Contour tool<br />

H. Ma, H. Silz<br />

23 rd CMp users Meeting, Dresden,<br />

october, 09, 2009, Germany<br />

(77) Cost-effective Integration of rF-LdMoS<br />

transistors in 0.13 µm - CMoS technology<br />

A. Mai, H. Rücker, R. Sorge, D. Schmidt,<br />

C. Wipf<br />

Ieee SiRF 2009, San Diego,<br />

January 19 - 21, 2009, uSA<br />

(78) Impact of the drift region profile on<br />

performance <strong>and</strong> reliability of rF-LdMoS<br />

transistors<br />

A. Mai, R. Sorge, H. Rücker<br />

International Symposium for power Semiconductor<br />

Devices 2009 (ISpSD 09), Barcelona,<br />

June 14 - 18, 2009, Spain<br />

(79) dry Chemical opening of emitter windows<br />

of High Speed pnp SiGe:C HBts in a<br />

Complementary BiCMoS technology<br />

St. Marschmeyer, B. Heinemann<br />

19 th ISpC (International Symposium on plasma<br />

Chemistry), Bochum,<br />

July 26 - 31, 2009, Germany<br />

(80) A High B<strong>and</strong> Impulse radio uwB<br />

transmitter for Communication <strong>and</strong><br />

Localization<br />

D. Martynenko, G. Fischer, o. Klymenko<br />

2009 Ieee International Conference on ultra-<br />

Wideb<strong>and</strong> (ICuWB), Vancouver,<br />

September 09 - 11, 2009, Canada<br />

V o r t r ä G e – p r e S e N t A t I o N S<br />

(81) Characterization of thin Film photovoltaic<br />

Material using photoluminescence <strong>and</strong><br />

raman Spectroscopy<br />

t. Mchedlidze, t. Arguirov,<br />

S. Kouteva-Arguirova, M. Kittler<br />

XIII International Autumn Meeting Gettering<br />

<strong>and</strong> Defect engineering in Semiconductor<br />

technology (GADeSt 2009), Döllnsee,<br />

September 26 - october 02, 2009, Germany<br />

(82) Correlation of Luminescence properties of<br />

a dislocation Network with its Microscopic<br />

Structure<br />

t. Mchedlidze, t. Arguirov, o. Kononchuk,<br />

M. Reiche, M. Kittler<br />

Arbeitskreis punktdefekte, Dresden,<br />

March 27, 2009, Germany<br />

(83) determination of the origin of dislocation<br />

related Luminescence from Silicon using<br />

regular dislocation Networks<br />

t. Mchedlidze, o. Kononchuk, t. Arguirov,<br />

M. trushin, M. Reiche, M. Kittler<br />

XIII International Autumn Meeting Gettering<br />

<strong>and</strong> Defect engineering in Semiconductor<br />

technology (GADeSt 2009), Döllnsee,<br />

September 26 - october 02, 2009, Germany<br />

(84) Investigations of Model Grain Boundaries<br />

in Silicon<br />

t. Mchedlidze, t. Arguirov, M. trushin,<br />

o. Kononchuk, M. Reiche, M. Kittler<br />

project Meeting SolarFocus, Apolda,<br />

March 18, 2009, Germany<br />

(85) prospects of Light Induced Solid phase<br />

Crystallization for Si based thin-Film<br />

Materials<br />

t. Mchedlidze, M. Kittler<br />

Kick-off Meeting of project SInoVA, Aachen,<br />

June 17, 2009, Germany<br />

A n n u A l R e p o R t 2 0 0 9

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