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88 A n n u A l R e p o R t 2 0 0 9 e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (35) Growth of praseodymium oxide on Si(111) under oxygen deficient Conditions A. Schaefer, V. Zielasek, th. Schmidt, A. Sandell, M. Schowalter, o. Seifarth, l.e. Walle, Ch. Schulz, J. Wollschläger, t. Schroeder, A. Rosenauer, J. Falta, M. Bäumer physical Review B 80, 045414 (2009) Surface science studies of thin praseodymium oxide films grown on silicon substrates are of high interest in view of applications in such different fields as microelectronics and heterogeneous catalysis. In particular, a detailed characterization of the growth and the final structure of the films are mandatory to achieve a fundamental understanding of such topics as oxygen mobility and defect structure, and their role for the electronic and chemical properties. In this paper, the MBe growth of praseodymium oxide films on Si(111) substrates was investigated at lowdeposition rates (0.06 nm / min) and low-oxygen partial pressures (p(o 2 )
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (37) Ge Integration on Si via rare earth oxide Buffers : From MBe to CVd t. Schroeder, A. Giussani, H.-J. Müssig, G. Weidner, I. Costina, Ch. Wenger, M. lukosius, p. Storck, p. Zaumseil Microelectronic engineering 86, 1615 (2009) Single crystalline rare earth oxide heterostructures are flexible buffer systems to achieve the monolithic integration of Ge thin film structures on Si. the development of engineered oxide systems suitable for mass-production compatible CVD processes is hereby of special importance. In this paper, the interaction of Ge with pro 2 (111) / Si(111) heterostructures is studied in detail to achieve this goal. MBe based in situ growth studies unveil the chemical reduction of the pro 2 buffer during the initial Ge deposition, the occurrence of a Volmer Weber growth mode of Ge on the resulting pr 2 o 3 heterostructure and the final formation of single crystalline, atomically smooth and c(2 x 8) reconstructed Ge(111) film structures. Comparative CVD Ge heteroepitaxy studies on MBe grown pro 2 (111) / Si(111) and pr 2 o 3 (111) / Si(111) buffer systems indicate that the highly reactive lattice oxygen of pro 2 plays an active role to avoid during initial exposure to the reducing ambient of the GeH 4 precursor chemistry the decomposition of the oxide buffer system. (38) dielectric properties of Single Crystalline pro 2 (111) / Si(111) Heterostructures: Amorphous Interface and electrical Instabilities o. Seifarth, Ch. Walczyk, G. lupina, J. Dabrowski, p. Zaumseil, G. Weidner, H.-J. Müssig, t. Schroeder Journal of Applied physics 106, 104105 (2009) Single crystalline pro 2 (111) / Si(111) heterostructures are flexible buffers for global Ge integration on Si. A combined materials science–electrical characterization is carried out to study the influence of postdeposition annealing in 1 bar oxygen at 300–600 °C on the dielectric properties of pro 2 (111) / Si(111). the materials science transmission electron microscopy and x-ray reflectometry studies reveal that postdeposition oxidation of the pro 2 (111) / Si(111) boundary results in an amorphous interface (IF) layer, which grows in thickness with temperature. nondestructive depth profiling synchrotron radiation-based xray photoelectron spectroscopy and x-ray absorption spectroscopy methods demonstrate that this amorphous IF layer is composed of two pr-silicate phases, namely, with increasing distance from Si, a Sio 2 -rich and a Sio 2 -poor pr silicate. the electronic band offset diagram shows that the wide band gap dielectric pr silicate results in higher band offsets with respect to Si than the medium band gap dielectric pro 2 . the electrical characterization studies by C-V measurements show that (a) well-behaved dielectric properties of the pro 2 (111) / IF / Si(111) are achieved in a narrow postdeposition oxidation window of 400–450 °C and that (b) defects are distributed over the pr-silicate IF layer. temperature-dependent J-V studies report furthermore that the formation of the single crystalline pro 2 / amorphous pr-silicate bilayer structure on Si(111) results in (a) improved insulating properties and (b) strong electrical instability phenomena in the form of a Maxwell–Wagner instability and dielectric relaxation. A n n u A l R e p o R t 2 0 0 9 89
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Annual Report 2009 A n n u A l R e
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