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86 A n n u A l R e p o R t 2 0 0 9 e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (27) dielectric properties of thin Hf- and Zr-based Alkaline earth pervoskite Layers G. lupina, J. Dabrowski, G. Kozlowksi, p. Dudek, G. lippert, H.-J. Müssig, t. Schroeder eCS transactions 25(6), 147 (2009) thin layers of high dielectric constant materials are of special interest for memory, logic, and passive microelectronic applications. Memory storage capacitors based on these materials should exhibit high capacitance densities and low leakage currents. Here, we investigate a group of Hf- and Zr-based alkaline earth perovskites for this application. It is found that thin layers of polycrystalline BaHfo 3 , SrHfo 3 , and BaZro 3 can provide capacitance densities about 2 times higher than that of amorphous Hfo 2 . post deposition annealing above ~ 700 °C is a crucial processing step required for obtaining the cubic perovskite phase with high dielectric constant. (28) Hf- and Zr-Based Alkaline earth pervoskite dielectrics for Memory Applications G. lupina, J. Dabrowski, G. Kozlowksi, p. Dudek, G. lippert, p. Zaumseil, H.-J. Müssig Microelectronic engineering 86(7-9), 1842 (2009) We investigate a group of Hf- and Zr-based dielectrics crystallizing in the cubic perovskite structure for memory applications. the dielectrics are deposited in the form of thin layers (
e r S C H I e N e N e p u B L I K A t I o N e N – p u B L I S H e d p A p e r S (31) Correlation of electrical and Luminescence properties of dislocation Networks with its Microscopic Structure t. Mchedlidze, t. Wilhelm, t. Arguirov, M. trushin, M. Reiche, M. Kittler physica Status Solidi C 6, 1817 (2009) the direct bonding of Si wafers reproducibly forms dislocation networks (Dn) with a microscopic structure defined by the mutual crystallographic orientation between the pair of wafers used for the bonding procedure. this allows studying the electrical and optical properties of specific dislocations. In the present work three different Dn structures were investigated using transmission electron microscopy (teM), photoluminescence (pl) and deep level transient spectroscopy (DltS). the results show close correlation between the structural, electrical and optical properties of dislocations and opens a possibility to identify structural peculiarities of the dislocations responsible for the high intensity of photoluminescence. namely, the obtained results suggest that pl at ~0.8 eV is related to screw dislocations in Dn. (32) electroluminescence from p-i-n Structure Fabricated using Crystalline Silicon on Glass technology t. Mchedlidze, t. Arguirov, M. Holla, M. Kittler Journal of Applied physics 105, 093107 (2009) Strong electroluminescence was detected at room temperature from a p-i-n structure fabricated using crystalline silicon on glass technology. the luminescence spectra at small to moderate carrier injection levels contains strong peak with maximum at energy position e ph ~0.8 eV. Additionally, a broad emission band in the range of energies 1 eV
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Annual Report 2009 A n n u A l R e
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I N H A L t S V e r Z e I C H N I S
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