Deliverables and Services - IHP Microelectronics

28 A n n u A l R e p o R t 2 0 0 9
A N G e B o t e u N d L e I S t u N G e N – d e L I V e r A B L e S A N d S e r V I C e S
CMoS and passives of 0.25 µm and 0.13 µm technologies
parameter SG25H1 / H3* SG13B / 13S SG13S
CMoS Section
Core Supply Voltage 2.5 V 3.3 V 1.2 V
nMoS V th 0.6 V 0.65 V 0.49 V
I Dsat 540 µA / µm 520 µA / µm 500 µA / µm
I off 3 pA / µm 10 pA / µm 500 pA / µm
pMoS V th - 0.56 V - 0.61 V - 0.42 V
I Dsat - 230 µA / µm - 220 µA / µm - 210 µA / µm
I off - 3 pA / µm - 10 pA / µm - 500 pA / µm
passives
MIM Capacitor 1 fF / µm 2 1.5 fF / µm 2 1.5 fF / µm 2
n + poly Resistor 210 Ω / - -
p + poly Resistor 280 Ω / 345 Ω / 345 Ω /
High poly Resistor 1600 Ω / 775 Ω / 775 Ω /
Varactor C max / C min 3 tbd. tbd.
Inductor Q@5.8 GHz (with tM2) 18 (1 nH) 18 (1 nH) 18 (1 nH)
Inductor Q@10 GHz (with tM2) 20 (1 nH) 20 (1 nH) 20 (1 nH)
*parameters for SGB25V are similar
. 0. µm SiGe BiCMOS (SG S, SG B)
parameter npn13p npn13V
Bipolar Section (SG13S, SG13B)
A e 0.12 x 0.48 µm 2 0.18 x 1.02 µm 2
peak f max 300 GHz 120 GHz
peak f t 250 GHz 45 GHz
BV Ceo 1.7 V 5.0 V
BV CBo 5.0 V 16 V
β 900 600