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Coater/Developer Evolution or Revolution? - Sematech

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Freeze‐Free Posi‐Posi Process Cross Line C/H<br />

Initial Si-H-M Etch Carbon Etch TEOS Etch Ashing<br />

Samples made by TOK<br />

1 st Space<br />

2 nd Space<br />

1 st Space<br />

Average:46.18nm<br />

3σ:2.37nm<br />

2 nd Space<br />

Average:45.64nm<br />

3σ:1.91nm

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