Coater/Developer Evolution or Revolution? - Sematech

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Freeze‐Free Posi‐Posi Process Cross Line C/H Initial Si-H-M Etch Carbon Etch TEOS Etch Ashing Samples made by TOK 1 st Space 2 nd Space 1 st Space Average:46.18nm 3σ:2.37nm 2 nd Space Average:45.64nm 3σ:1.91nm
TEL FIRM Impact on Pattern Collapse Coat freeze LLE L/S Patterning DIW Rinse Surfactant Rinse ~170 defects due to pattern collapse ~0 defects due to pattern collapse TEL FIRM has demonstrated effectiveness across multiple LLE processes. Data courtesy of IMEC Reference: Towards 26nm hp: Advances in Litho Process Litho; P. Wong
Page 1 and 2: Double Patterning Coater/Developer
Page 3 and 4: i-line KrF / ArF Immersion Evolutio
Page 5 and 6: 1 st Exposure 1 st Etch 2 nd Exposu
Page 7 and 8: Key Coater/Developer DP Concerns Pr
Page 9: PR Line Slimming & LWR Reduction Po
Page 13 and 14: Key Coater/Developer DP Concerns Pr
Page 15 and 16: Process Costs: Dual‐Tone Developm
Page 17 and 18: Tool Productivity: LITHIUS Pro V OE
Page 19 and 20: Tool Productivity: Wafers Per Day (
Page 21: • TEL: Acknowledgements - S. Shim

Coater/Developer Evolution or Revolution? - Sematech

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