31.01.2013 Views

PhD Thesis - Cranfield University

PhD Thesis - Cranfield University

PhD Thesis - Cranfield University

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Chapter 7<br />

Power Losses in the PE switch and diode<br />

Table 7.5 Converter power electronic device parameters<br />

The MOSFET conduction loss during forward conduction (ON-State) is a function of the<br />

duty cycle D, and can be calculated as,<br />

P<br />

con<br />

where<br />

⎛<br />

⎜ 1<br />

= i<br />

⎜<br />

⎝<br />

t ∫<br />

on ton<br />

= I<br />

2<br />

out<br />

sw<br />

⋅ Rds<br />

⎞<br />

( t)<br />

dt ⎟<br />

⎟<br />

⎠<br />

( on)<br />

2<br />

⋅ D<br />

Rds<br />

( on)<br />

⋅ D<br />

Rds (on) is the MOSFET ON- resistance<br />

205<br />

(7-81)<br />

The switching losses are influenced by the intrinsic MOSFET turn-on time delay t sw(on) and<br />

turn-off time delay t sw(off) according to,<br />

1<br />

P sw = I ds ⋅VDC<br />

( peak ) ⋅ f sw ⋅ ( t sw(<br />

on)<br />

+ tsw(<br />

off ) )<br />

(7-82)<br />

2<br />

where<br />

Device Voltage rating Current rating Physical Device Configuration<br />

Switches<br />

T1, T2, T3, T4<br />

Diodes<br />

D1, D2, D3, D4<br />

Vpeak = 70V<br />

Vpeak = 70V<br />

Ipeak = 250A<br />

Ipeak = 250A<br />

I ds is the MOSFET drain to source current<br />

MOSFET<br />

IRFB 4710<br />

100V, 75A , Rds =0.014ohm<br />

Ultra Fast Diode<br />

IR- 70EPF02<br />

200V, 600A, Vfd=1.4V<br />

4 units in parallel for<br />

each switch set<br />

(16 units in total)<br />

1 unit per switch<br />

set.

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!