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HF-Praxis 5-2018

Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

RF & Wireless GaN/Si RF

RF & Wireless GaN/Si RF Material Technology at the Core of EU 5G Project SERENA EpiGaN, a leading European supplier of GaN (Gallium Nitride) technology solutions, has a key position in the new EU research project SERENA (gan-on- Silicon Efficient mm-wave euRopean systEm iNtegration platform). SERENA sets out to develop a beamforming system platform for mm-wave multiantenna arrays and to enable the functional performance of a hybrid analog/ digital signal processing architecture beyond mainstream CMOS integration. SERENA started in January 2018 will run for 36 months. The objective of SERENA is a proofof-concept prototype for optimizing the power efficiency and cost of mmwave multi-antenna array systems. The SERENA architecture will be suitable for a wide range of applications such as safety radar, high-speed wireless communications, as well as imaging sensors for 5G and autonomous vehicles, all of which rely on active antenna arrays and electronic beam steering. The fundamental challenge is to produce highperformance antenna systems for the mm-wave range at viable price-points and low energy consumption. The SERENA value chain will be based on breakthroughs in Gallium Nitride on Silicon (GaN-on-Si) technology and state-of-the-art volume packaging. These elements are contributed by Epi- GaN through its GaN epi-wafer technology. EpiGaN‘s GaN epi-wafer technology with its pioneering in-situ SiN capping layer provides superior surface passivation and device reliability. Plus, it enables contamination-free processing in existing standard Si-CMOS infrastructures. In-situ SiN structuring allows the use of pure and ultra-thin AlN layers as barrier materials. By reducing the short-channel transistor effects this results in superior mmW performance. GaN is a key enabler of 5G wireless communication. 5G requires exceptionally high-speed connections for multimedia streaming, virtual reality, M2M, or autonomous driving. A fully developed IoT will experience lower latency and promote both spectrum and energy efficiency. To realize these benefits, 5G systems need to rely on new semiconductor technologies – such as GaN – to fuel these ground-breaking innovations. ■ EpiGaN www.epigan.com Broadband GaN Solid State Power Amplifier RFMW, Ltd. announced design and sales support for a multi octave bandwidth, GaN, solid state power amplifier from Aethercomm. Model Number SSPA 6.0-18.0-30 operates from 6 to 18 GHz and delivers 30 watts (typ.) of saturated output power to the load. Typical small signal gain is 45 to 55 dB while typical power gain is 40 to 45 dB. A PA Enable Command is used to gate the PA on and off. On time is specified at 40 uSec maximum and Off time at 10 µs maximum. Standard features include reverse polarity protection, output short and open circuit protection and over/under voltage protection. The SSPA 6.0-18.0-30 broadband power amplifier module is packaged in a rugged housing that can be used in high shock and vibration environments with base plate temperatures from -40 to +70 °C. ■ RFMW, Ltd. info@rfmw.com www.rfmw.com 8x8 MIMO Sector Antenna for the 5 GHz Band KP Performance Antennas announced today that it has introduced a new 34-inch-tall MIMO sector antenna operating in the popular 5 GHz band that features 8 inputs and HV-polarization. KP’s new KP-5HVX8-65 sector antenna features dual-horizontal/ vertical-polarization with a 65° azimuth beamwidth and eight ports, all within a single 34-inch radome. It delivers high gain over a wide bandwidth of 4.9 to 6.4 GHz with up to 17.5 dBi gain at 5.9 GHz. The antenna is supplied with a robust, universal adjustable bracket with wide U-bolts for mounting on poles or tower legs up to 3.5 inches in diameter. This new sector antenna from KP Performance has eight 5 GHz ports with collocated patterns all facing in the same direction. Connecting two four-port radios provides additional redundancy and can be leveraged to increase capacity by using separate channels on each radio. Pairing the sector with two of Mimosa’s A5C radios (4 ports each) provides an additional 2 dBi beamforming gain, which allows for extremely long shots with Mimosa’s high client speeds. Four of these antennas mounted to a tower provides complete 360° coverage which can be increased to six antennas for more dense applications. ■ KP Performance Antennas www.kpperformance.com High-Voltage Coupled Inductors Coilcraft debutd its new LPD8035V Series of miniature, high-voltage 1:1 coupled inductors at the Applied Power Electronics Conference (APEC) in San Antonio, Texas. The LPD8035V provides 1500 Vrms, oneminute isolation (hipot) between windings from a package that measures just 7.92 x 6.4 x 3.5 mm, providing users with significant size and cost reductions over conventional bobbin-wound alternatives. It is ideal for Flyback, SEPIC and isolated-Buck converter designs. The LPD8035V Series is currently offered in six inductance values ranging from 4.7 to 150 µH. It provides peak current ratings up to 2.7 Amps, which represents a 40% increase over previous generation products. It also has a tight coupling coefficient (min. 0.97). LPD8035V coupled inductors are qualified to AEC-Q200 Grade 3 standards (-40 to +85 °C ambient), making them suitable for automotive and other high-temperature applications. They feature RoHS compliant 74 hf-praxis 5/2018

RF & Wireless matte tin over silver-platinum-glass frit terminations and are halogen free. ■ Coilcraft www.coilcraft.com 2x2 MIMO Sector Antennas RFMW, Ltd. announced design and sales support for Southwest Antennas’ 2x2 sector antennas for MIMO radios. The 1009-037 is designed for frequencies from 4.4 to 5 GHz. Model 1009-035 covers frequencies from 2.2 to 2.5 GHz. Both antennas offer 12 dBi minimum gain and handle RF power levels up to 50 W. These 2x2 antennas offer 120 degrees of azimuth beamwidth featuring a dual polarized design with 1x 45 degree slant left and 1x 45 degree slant right. Integral mounts offer 0 to 15 degrees of adjustable elevation downtilt. The two input connectors are Type N female and their radomes are made of white, UV stable Kydex. Used in base station infrastructure applications, MIMO/MANET and Mesh network radios, these antennas come complete with hardware for mounting to one or two inch diameter poles enabling rapid deployment of networks for event management and security. ■ RFMW, Ltd. info@rfmw.com www.rfmw.com Ultra Low-Noise Amplifier for SDARS RFMW, Ltd. announced design and sales support for the Qorvo QPL6202 LNA. This ultra low-noise amplifier is designed for SDARS active antenna modules and features 0.55 dB noise figure at 2.3 GHz. Offering >20 dB of flat gain across the band of 2.3 to 2.345 GHz, the QPL6202 incorporates active bias to maintain performance over temperature and is adjustable for optimal linearity. Drawing 55 mA from a 4.5 V supply, this LNA has an integrated shutdown control pin and is available in a 2 x 2 mm package. ■ RFMW, Ltd. info@rfmw.com www.rfmw.com LTE FEM Targets IoT RFMW, Ltd. announced design and sales support for a Skyworks Solutions, low power, frontend module. The SKY68001-31 is an LTE, universal, multi-band FEM for Cat-M, NB-IoT, smart energy and asset tracking applications. Featuring an integrated multi-band power amplifier, antenna switch, MIPI controller, Tx filter, Rx filter and output matching, the SKY68001-31 saves PCB area and simplifies designs. Transmit power is 24 dBm with gain as high as 32 dB. Low leakage current of 0.4 microamps is a key benefit for battery operated IoT devices. Compatible with any system-onchip (SoC), it’s offered in a low profile, 4 x 5 mm package. ■ RFMW, Ltd. info@rfmw.com www.rfmw.com 5G Ready mmWave Bias Tee RFMW, Ltd. announced design and sales support for MECA’s 2.9 mm, 40 GHz Bias Tee. The 209K-MF-5 offers the ability to inject and retrieve both DC and RF signals in transmission lines; used for biasing active devices without the need for additional bias lines. The 209K-MF-5 operates down to 100 MHz for applications ranging from test and measurement to OC768 transmitters and receivers. Featuring a maximum insertion loss of 3 dB at 40 GHz, it’s rated up to 25 V and 150 mA. Typical RF to bias port isolation is 30 dB. ■ RFMW, Ltd. info@rfmw.com www.rfmw.com GaN-on-Si MMIC Power Amplifiers for Massive MIMO 5G MACOM Technology Solutions, Inc. announced its new MAGM series of GaN-on-Si-based MMIC power amplifiers (PAs) optimized for massive MIMO antenna systems targeted for 5G wireless basestation infrastructure. Providing wideband performance simultaneously covering bands 42 and 43 with flat power and superior power efficiency compared to legacy LDMOS technology, MACOM’s new MAGM PA Series delivers GaN performance at LDMOS-like cost structures at scaled volume production levels in fully integrated MMIC packaging for simplified, cost-effective 5G basestation manufacturing. MAGM Series MMIC PAs are specifically tailored for mainstream 5G basestation architectures, meeting and surpassing the power density and thermal requirements of 64-element massive MIMO antenna arrays, with a pathway to exceeding the performance of LDMOS technology, at scaled volume level production cost structures and supply capacities that can’t be achieved with competing GaN-on-SiC technology. Designed with MACOM proprietary wideband circuit topology, the PAs meet the stringent 5G TDD linearity requirement using off the shelf digitalpre-distortion (“DPD”) systems. Compared to earlier generation multichipformat GaN-on-Si modules, costs are further lowered through a reduction in packaging and design complexity. Leveraging this ideal performance and cost with the capacity scale manufacturing afforded by MACOM’s partnership with ST Microelectronics, MACOM’s GaN-on-Si solutions are expected to be able to significantly improve customers’ time to market. ■ MACOM Technology Solutions, Inc. www.macom.com hf-praxis 5/2018 75