5-2018

RF & Wireless
matte tin over silver-platinum-glass frit terminations
and are halogen free.
■ Coilcraft
www.coilcraft.com
2x2 MIMO Sector Antennas
RFMW, Ltd. announced design and sales
support for Southwest Antennas’ 2x2 sector
antennas for MIMO radios. The 1009-037 is
designed for frequencies from 4.4 to 5 GHz.
Model 1009-035 covers frequencies from
2.2 to 2.5 GHz. Both antennas offer 12 dBi
minimum gain and handle RF power levels
up to 50 W. These 2x2 antennas offer 120
degrees of azimuth beamwidth featuring a
dual polarized design with 1x 45 degree slant
left and 1x 45 degree slant right. Integral
mounts offer 0 to 15 degrees of adjustable
elevation downtilt. The two input connectors
are Type N female and their radomes
are made of white, UV stable Kydex. Used
in base station infrastructure applications,
MIMO/MANET and Mesh network radios,
these antennas come complete with hardware
for mounting to one or two inch diameter
poles enabling rapid deployment of
networks for event management and security.
■ RFMW, Ltd.
info@rfmw.com
www.rfmw.com
Ultra Low-Noise Amplifier for
SDARS
RFMW, Ltd. announced design and sales
support for the Qorvo QPL6202 LNA.
This ultra low-noise amplifier is designed
for SDARS active antenna modules and
features 0.55 dB noise figure at 2.3 GHz.
Offering >20 dB of flat gain across the
band of 2.3 to 2.345 GHz, the QPL6202
incorporates active bias to maintain performance
over temperature and is adjustable
for optimal linearity. Drawing 55 mA from
a 4.5 V supply, this LNA has an integrated
shutdown control pin and is available in a
2 x 2 mm package.
■ RFMW, Ltd.
info@rfmw.com
www.rfmw.com
LTE FEM Targets IoT
RFMW, Ltd. announced design and sales
support for a Skyworks Solutions, low
power, frontend module. The SKY68001-31
is an LTE, universal, multi-band FEM for
Cat-M, NB-IoT, smart energy and asset tracking
applications. Featuring an integrated
multi-band power amplifier, antenna switch,
MIPI controller, Tx filter, Rx filter and
output matching, the SKY68001-31 saves
PCB area and simplifies designs. Transmit
power is 24 dBm with gain as high as 32
dB. Low leakage current of 0.4 microamps
is a key benefit for battery operated IoT
devices. Compatible with any system-onchip
(SoC), it’s offered in a low profile, 4
x 5 mm package.
■ RFMW, Ltd.
info@rfmw.com
www.rfmw.com
5G Ready mmWave Bias Tee
RFMW, Ltd. announced design and sales
support for MECA’s 2.9 mm, 40 GHz Bias
Tee. The 209K-MF-5 offers the ability to
inject and retrieve both DC and RF signals
in transmission lines; used for biasing active
devices without the need for additional
bias lines. The 209K-MF-5 operates down
to 100 MHz for applications ranging from
test and measurement to OC768 transmitters
and receivers. Featuring a maximum
insertion loss of 3 dB at 40 GHz, it’s rated
up to 25 V and 150 mA. Typical RF to bias
port isolation is 30 dB.
■ RFMW, Ltd.
info@rfmw.com
www.rfmw.com
GaN-on-Si MMIC
Power Amplifiers for
Massive MIMO 5G
MACOM Technology Solutions, Inc.
announced its new MAGM series
of GaN-on-Si-based MMIC power
amplifiers (PAs) optimized for massive
MIMO antenna systems targeted
for 5G wireless basestation infrastructure.
Providing wideband performance
simultaneously covering bands 42 and
43 with flat power and superior power
efficiency compared to legacy LDMOS
technology, MACOM’s new MAGM
PA Series delivers GaN performance
at LDMOS-like cost structures at scaled
volume production levels in fully
integrated MMIC packaging for simplified,
cost-effective 5G basestation
manufacturing.
MAGM Series MMIC PAs are specifically
tailored for mainstream 5G
basestation architectures, meeting
and surpassing the power density and
thermal requirements of 64-element
massive MIMO antenna arrays, with
a pathway to exceeding the performance
of LDMOS technology, at scaled
volume level production cost structures
and supply capacities that can’t be
achieved with competing GaN-on-SiC
technology.
Designed with MACOM proprietary
wideband circuit topology, the PAs
meet the stringent 5G TDD linearity
requirement using off the shelf digitalpre-distortion
(“DPD”) systems. Compared
to earlier generation multichipformat
GaN-on-Si modules, costs are
further lowered through a reduction in
packaging and design complexity. Leveraging
this ideal performance and cost
with the capacity scale manufacturing
afforded by MACOM’s partnership
with ST Microelectronics, MACOM’s
GaN-on-Si solutions are expected to be
able to significantly improve customers’
time to market.
■ MACOM Technology Solutions, Inc.
www.macom.com
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