PDF (Thesis) - Nottingham eTheses - University of Nottingham
PDF (Thesis) - Nottingham eTheses - University of Nottingham
PDF (Thesis) - Nottingham eTheses - University of Nottingham
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CHAPTER 2: EXPERIMENTAL IMPLEMENTATION OF MATRIX CONVERTER DRIVE<br />
Voltage [%]<br />
Voltage [%]<br />
1<br />
0.5<br />
0<br />
−0.5<br />
−1<br />
1<br />
0.5<br />
0<br />
−0.5<br />
Venturini, q = 0.5<br />
Input voltage envelope Output voltage reference<br />
Venturini Optimized, q = 0.866<br />
−1<br />
0 0.005 0.01 0.015 0.02<br />
time [s]<br />
0.025 0.03 0.035 0.04<br />
Figure 2.3: Output voltage comparison for modulation techniques<br />
the input and the output to be <strong>of</strong> different nature: it should not have inductors both<br />
at the input and output (imposed current) or capacitors (imposed voltage). Failing<br />
this condition, the switch will have to close across two different sources <strong>of</strong> voltage or<br />
currents, driven on each side at different values; this is an unacceptable condition that<br />
will most probably cause the failure <strong>of</strong> the device. Assuming to have a motor as a load,<br />
because <strong>of</strong> its inductive nature, every output must be connected to an input at any<br />
given time, to prevent current transients.<br />
Usually the chosen devices for the switches are IGBT because <strong>of</strong> their current capa-<br />
bilities, however this devices are intrinsically unidirectional, thus every switch in Fig.<br />
2.1 actually consists <strong>of</strong> two devices connected in anti-parallel, in common collector or,<br />
more <strong>of</strong>ten, common emitter configuration. Taking this into account and consider-<br />
ing the finite amount <strong>of</strong> time needed for a semiconductor to change state, it is clear<br />
that to change configuration <strong>of</strong> the switches a special sequence must be introduced, to<br />
overcome these problems [36][37]. To do so three commutation techniques have been<br />
introduced: 2 step, 3 step or 4 step commutations. The two step commutation tech-<br />
nique simply uses a single dead time between the switching <strong>of</strong>f <strong>of</strong> a transistor and the<br />
switching on <strong>of</strong> the other one, leaving to the clamp circuit the task <strong>of</strong> dealing with the<br />
over-voltages generated when there is no path for the current. The four step commuta-<br />
tion sequence is represented in Fig. 2.4, where each switch adopts the common emitter<br />
configuration; the IGBT that creates a path for the current to flow from the source to<br />
the load will be called forward IGBT and the one that allows the current to go from the<br />
load to the source will be called reverse IGBT. This sequence implies a first step with<br />
the switching <strong>of</strong>f <strong>of</strong> the reverse IGBT (1); to control the appropriate IGBT the current’s<br />
direction can be sensed and fed to the control. The second step will close the forward<br />
20<br />
(a)<br />
(b)