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PDF (Thesis) - Nottingham eTheses - University of Nottingham

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CHAPTER 2: EXPERIMENTAL IMPLEMENTATION OF MATRIX CONVERTER DRIVE<br />

Voltage [%]<br />

Voltage [%]<br />

1<br />

0.5<br />

0<br />

−0.5<br />

−1<br />

1<br />

0.5<br />

0<br />

−0.5<br />

Venturini, q = 0.5<br />

Input voltage envelope Output voltage reference<br />

Venturini Optimized, q = 0.866<br />

−1<br />

0 0.005 0.01 0.015 0.02<br />

time [s]<br />

0.025 0.03 0.035 0.04<br />

Figure 2.3: Output voltage comparison for modulation techniques<br />

the input and the output to be <strong>of</strong> different nature: it should not have inductors both<br />

at the input and output (imposed current) or capacitors (imposed voltage). Failing<br />

this condition, the switch will have to close across two different sources <strong>of</strong> voltage or<br />

currents, driven on each side at different values; this is an unacceptable condition that<br />

will most probably cause the failure <strong>of</strong> the device. Assuming to have a motor as a load,<br />

because <strong>of</strong> its inductive nature, every output must be connected to an input at any<br />

given time, to prevent current transients.<br />

Usually the chosen devices for the switches are IGBT because <strong>of</strong> their current capa-<br />

bilities, however this devices are intrinsically unidirectional, thus every switch in Fig.<br />

2.1 actually consists <strong>of</strong> two devices connected in anti-parallel, in common collector or,<br />

more <strong>of</strong>ten, common emitter configuration. Taking this into account and consider-<br />

ing the finite amount <strong>of</strong> time needed for a semiconductor to change state, it is clear<br />

that to change configuration <strong>of</strong> the switches a special sequence must be introduced, to<br />

overcome these problems [36][37]. To do so three commutation techniques have been<br />

introduced: 2 step, 3 step or 4 step commutations. The two step commutation tech-<br />

nique simply uses a single dead time between the switching <strong>of</strong>f <strong>of</strong> a transistor and the<br />

switching on <strong>of</strong> the other one, leaving to the clamp circuit the task <strong>of</strong> dealing with the<br />

over-voltages generated when there is no path for the current. The four step commuta-<br />

tion sequence is represented in Fig. 2.4, where each switch adopts the common emitter<br />

configuration; the IGBT that creates a path for the current to flow from the source to<br />

the load will be called forward IGBT and the one that allows the current to go from the<br />

load to the source will be called reverse IGBT. This sequence implies a first step with<br />

the switching <strong>of</strong>f <strong>of</strong> the reverse IGBT (1); to control the appropriate IGBT the current’s<br />

direction can be sensed and fed to the control. The second step will close the forward<br />

20<br />

(a)<br />

(b)

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