Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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Overcoming Short-Channel Effects<br />
Improve gate electrostatic control of<br />
channel charge<br />
• Higher body doping but higher V T<br />
• Sh<strong>al</strong>lower source/drain but higher R s<br />
• Thinner t ox but higher gate leakage<br />
• High-K dielectric <strong>to</strong> reduce tunneling<br />
• M<strong>et</strong><strong>al</strong> gate <strong>to</strong> overcome poly depl<strong>et</strong>ion<br />
• Fully-depl<strong>et</strong>ed structures (e.g., fins)<br />
Stressors <strong>for</strong> mobility enhancement<br />
1<br />
x j<br />
<br />
doping<br />
n +<br />
source<br />
gate<br />
n +<br />
drain<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
Slide 17