Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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LOCOS Isolation – 350nm & Earlier<br />
1<br />
2<br />
3<br />
bird’s<br />
beak<br />
Deposit & pattern thin<br />
Si 3 N 4 oxidation mask<br />
Grow therm<strong>al</strong> field oxide<br />
• Industry played lots of tricks <strong>to</strong> reduce width of bird’s beak &<br />
reduce field oxide <strong>to</strong> active area <strong>to</strong>pography<br />
Depth of Focus Resolution / NA<br />
Strip Si 3 N 4 mask<br />
• Barriers <strong>to</strong> sc<strong>al</strong>ing: bird’s beak, <strong>to</strong>pography <strong>for</strong> gate patterning<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
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