Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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Multi-Chamber Cluster Tools<br />
• Gate oxide no longer furnace grown<br />
• Pre-oxidation clean, gate oxidation<br />
& poly/ARL deposition per<strong>for</strong>med in<br />
separate chambers without breaking<br />
vacuum<br />
• B<strong>et</strong>ter thickness & film composition<br />
control (native SiO 2 grows instantly<br />
when exposed <strong>to</strong> air)<br />
• Fast – minutes-seconds per wafer<br />
vs. hours per wafer batch<br />
• Economic<strong>al</strong>ly feasible with trend<br />
<strong>to</strong>wards larger wafer sizes<br />
Top<br />
View<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
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