Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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Gate Oxide Growth<br />
• Need two gate oxide t ox ’s – thin <strong>for</strong> core FET & thick <strong>for</strong> I/O FET<br />
1 2 3<br />
Grow 1 st oxide gate<br />
oxide<br />
Strip oxide <strong>for</strong> core FET Grow 2 nd oxide<br />
Si substrate<br />
I/O FET<br />
gate oxide<br />
core FET<br />
gate oxide<br />
• Oxide is grown, not deposited<br />
• Need high-qu<strong>al</strong>ity Si-SiO 2 interface with low Q f & D it<br />
• Gate oxide is re<strong>al</strong>ly made of silicon oxynitride (SiO x N y )<br />
• Nitrogen prevents boron diffusion from p+ poly <strong>to</strong> channel<br />
• Improves GOI (gate oxide integrity) reliability<br />
• Side benefit – increased ox<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
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