Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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Benefits of H<strong>al</strong>o and Extension<br />
Resulting structure<br />
• Less short-channel effect<br />
• Sh<strong>al</strong>low junction where<br />
needed most<br />
• Low junction capacitance<br />
poly<br />
gate<br />
h<strong>al</strong>os<br />
h<strong>al</strong>os<br />
Not <strong>to</strong> be confused with LDD in I/O FET<br />
• Same process with spacers but Iightly doped drain (LDD) is<br />
used <strong>for</strong> minimizing peak electric fields that cause hot<br />
carriers & breakdown<br />
• Extensions need <strong>to</strong> be heavily doped <strong>to</strong> minimize series<br />
resistance<br />
Different h<strong>al</strong>o & extension/LDD implants <strong>for</strong> each FET variant<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
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