Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
Loke et al., 2D to 3D MOS Technology Evolution for Circuit Designers
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Outline<br />
• Part 1<br />
– Motivation<br />
– <strong>MOS</strong>FET & Short-Channel Fundament<strong>al</strong>s<br />
– Lithography<br />
– G<strong>et</strong>ting <strong>to</strong> 130nm<br />
– More <strong>MOS</strong>FET Fundament<strong>al</strong>s<br />
– Parti<strong>al</strong>ly-Depl<strong>et</strong>ed SOI<br />
• Part 2<br />
– Strain Engineering (90nm & Beyond)<br />
– High-K / M<strong>et</strong><strong>al</strong>-Gate (45nm & Beyond)<br />
– Migrating <strong>to</strong> Fully-Depl<strong>et</strong>ed (22nm & Beyond)<br />
– Tri-Gate FinFETs<br />
– Conclusions<br />
© <strong>Loke</strong> <strong>et</strong> <strong>al</strong>., <strong>2D</strong> <strong>to</strong> <strong>3D</strong> <strong>MOS</strong> <strong>Technology</strong> <strong>Evolution</strong> <strong>for</strong> <strong>Circuit</strong> <strong>Designers</strong><br />
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