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LTC2410 24-Bit No Latency ∆ΣTM ADC with Differential Input and ...

LTC2410 24-Bit No Latency ∆ΣTM ADC with Differential Input and ...

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<strong>LTC<strong>24</strong>10</strong>APPLICATIO S I FOR+FS ERROR (ppm OF VREF)300<strong>24</strong>0180120600ATIOU W U UV CC = 5VREF + = 5VREF – = GNDIN + = 3.75VIN – = 1.25VF O = GNDT A = 25°CC IN = 1µF, 10µFC IN = 0.1µFC IN = 0.01µF0 100 200 300 400 500 600 700 800 900 1000R SOURCE (Ω)<strong>24</strong>10 F19Figure 19. +FS Error vs R SOURCE at IN + or IN – (Large C IN )–FS ERROR (ppm OF VREF)0–60–120–180–<strong>24</strong>0–300V CC = 5VREF + = 5VREF – = GNDIN + = 1.25VIN – = 3.75VF O = GNDT A = 25°CC IN = 0.01µFC IN = 0.1µFC IN = 1µF, 10µF0 100 200 300 400 500 600 700 800 900 1000R SOURCE (Ω)<strong>24</strong>10 F20Figure 20. –FS Error vs R SOURCE at IN + or IN – (Large C IN )OFFSET ERROR (ppm OF V REF )120100806040200–20–40–60–80–100–120ABCDEFGV CC = 5VREF + = 5VREF – = GNDIN + = IN – = V INCMF O = GNDT A = 25°CR SOURCEIN – = 500ΩC IN = 10µF0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5V INCM (V)A: ∆R IN = +400ΩB: ∆R IN = +200ΩC: ∆R IN = +100ΩD: ∆R IN = 0ΩE: ∆R IN = –100ΩF: ∆R IN = –200ΩG: ∆R IN = –400Ω<strong>24</strong>10 F21Figure 21. Offset Error vs Common Mode Voltage(V INCM = IN + = IN – ) <strong>and</strong> <strong>Input</strong> Source Resistance Imbalance(∆R IN = R SOURCEIN + – R SOURCEIN –) for Large C IN Values (C IN ≥ 1µF)In addition to the input sampling charge, the input ESDprotection diodes have a temperature dependent leakagecurrent. This current, nominally 1nA (±10nA max), resultsin a small offset shift. A 100Ω source resistance will createa 0.1µV typical <strong>and</strong> 1µV maximum offset voltage.Reference CurrentIn a similar fashion, the <strong>LTC<strong>24</strong>10</strong> samples the differentialreference pins REF + <strong>and</strong> REF – transfering small amount ofcharge to <strong>and</strong> from the external driving circuits thusproducing a dynamic reference current. This current doesnot change the converter offset, but it may degrade thegain <strong>and</strong> INL performance. The effect of this current can beanalyzed in the same two distinct situations.For relatively small values of the external reference capacitors(C REF < 0.01µF), the voltage on the sampling capacitorsettles almost completely <strong>and</strong> relatively large values forthe source impedance result in only small errors. Suchvalues for C REF will deteriorate the converter offset <strong>and</strong>gain performance <strong>with</strong>out significant benefits of referencefiltering <strong>and</strong> the user is advised to avoid them.Larger values of reference capacitors (C REF > 0.01µF) maybe required as reference filters in certain configurations.Such capacitors will average the reference sampling charge<strong>and</strong> the external source resistance will see a quasi constantreference differential impedance. When F O = LOW(internal oscillator <strong>and</strong> 60Hz notch), the typical differentialreference resistance is 1.3MΩ which will generate a gainerror of approximately 0.38ppm for each ohm of sourceresistance driving REF + or REF – . When F O = HIGH (internaloscillator <strong>and</strong> 50Hz notch), the typical differential referenceresistance is 1.56MΩ which will generate a gain errorof approximately 0.32ppm for each ohm of source resistancedriving REF + or REF – . When F O is driven by anexternal oscillator <strong>with</strong> a frequency f EOSC (external conversionclock operation), the typical differential referenceresistance is 0.20 • 10 12 /f EOSC Ω <strong>and</strong> each ohm of sourceresistance drving REF + or REF – will result in2.47 • 10 –6 • f EOSC ppm gain error. The effect of the sourceresistance on the two reference pins is additive <strong>with</strong>respect to this gain error. The typical +FS <strong>and</strong> –FS errorsfor various combinations of source resistance seen by the27

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