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Magnetic Oxide Heterostructures: EuO on Cubic Oxides ... - JuSER
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88 5. Results II: EuO integration directly on silicon<br />
shifted towards higher binding energies by reduced Coulomb repulsion and couples antiferromagnetically;<br />
this 4f 6 configuration will exhibit more complex final-state multiplet effects<br />
that have been studied e. g. by Lang et al. (1981). 172<br />
HAXPES experiments were carried out at the undulator beamline P09 at PETRA III (DESY<br />
Hamburg) using a photon excitation energy of 4.2 keV. The spectra were recorded at room<br />
temperature in normal emission geometry with an energy resolution of 0.5 eV. The binding<br />
energy scale was calibrated to the metallic Fermi edge of an Au foil in contact with the<br />
sample. A Shirley-type background was subtracted from the raw data to correct inelastic<br />
photoelectron scattering.<br />
Eu 4f valence band spectra in normal emission geometry are depicted in Fig. 5.3a and c<br />
for both EuO compounds (i) and (ii). A center of spectral weight is located 1.8 eV below<br />
E F in both spectra, which can be clearly identified as electron emission from the divalent<br />
Eu 2+ initial state in a 4f 7 → 4f 6 final state configuration. The Eu 2+ peak agrees well with the<br />
calculated divalent Euf 4f multiplet depicted in Fig. 5.3e. 173 Moreover, a doublet peak centered<br />
at ∼4.8 eV below E F is assigned to the emission from O 2p orbital, which originates from<br />
both EuO and Al 2 O 3 . The absence of a second multiplet in the higher binding energy region<br />
in Fig. 5.3a indicates, that the Eu cations in compound (i) are mainly of divalent valency, as<br />
expected for stoichiometric EuO.<br />
In contrast, the 4f spectrum of the EuO compound (ii) in Fig. 5.3c shows a large additional<br />
multiplet structure in the binding energy region from 5–13 eV below E F , which corresponds<br />
to the 4f 6 → 4f 5 final state multiplet of trivalent Eu 3+ . The broad Eu 3+ final state structure<br />
is in accordance with previous experimental studies on oxidized Eu compounds 159,160,174,176<br />
and with calculated multiplet lines 172,175 (Fig. 5.3e). Due to over-oxidation in compound (ii),<br />
the contribution of the overlapping O 2p peak has significantly increased. From the presence<br />
of both 4f 6 and 4f 5 final state multiplets, we anticipate, that the initial state valency of Eu<br />
in compound (ii) is of mixed divalent and trivalent nature, which is indicative for the Eu 3 O 4<br />
oxidation phase.<br />
A necessary criterion to identify the stoichiometry of the magnetic oxide EuO is its initial<br />
state valency. Therefore, we quantify the spectral contributions of divalent (n = 7) and trivalent<br />
(n = 6) Eu cations from the respective 4f n−1 peak intensities. However, the EuO surface<br />
electronic structure may significantly differ from that of bulk EuO, due to changes in<br />
local atomic geometry or coordination in direct proximity to the Al/Al 2 O 3 capping layer.<br />
Thus, surface-shifted and bulk-like final states may contribute to the Eu photoemission peak,<br />
shifted in binding energy E B by δ S = EB<br />
surface − EB<br />
bulk . To discriminate between surface and<br />
bulk-related photoemission, we vary the depth sensitivity of the HAXPES experiment by<br />
recording spectra in normal emission (ne) and 43 ◦ off-normal emission (oe) geometry. From<br />
our calculated energy and angle-dependent information depths ID 4f of photoelectrons, † we<br />
expect an enhanced surface sensitivity of 30% for 4f photoemission in (oe) geometry compared<br />
to the bulk-sensitive (ne). Depth-dependent information can be extracted from Fig.<br />
5.3b and d, which display the difference intensity curves of the normalized and backgroundcorrected<br />
4f spectra recorded in (oe) and (ne) geometries, ΔI4f<br />
∗ = Ioe ∗ − Ine. ∗ In these plots,<br />
ΔI ∗ < 0(> 0) correspond to contributions from bulk (IB ∗ ) (surface (I S ∗ )) photoemission. For<br />
We refer to Ch. 3.4.3 on pp. 48 for details on the beamline and the electron analyzer.<br />
† see Ch. 3.4.4 on p. 51, or references Powell et al. (1999), Tanuma et al. (2011). 84,179