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A.2. In situ analysis of the Si (001) surface by AES 131 Figure A.4.: In situ analysis of the Si (001) surface with different types of hydrogen passivation, conducted by Auger electron spectroscopy in the Oxide-MBE system.
Bibliography [1] G. Binasch, P. Grünberg, F. Saurenbach, and W. Zinn. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys. Rev. B, 39:4828–4830, Mar 1989. doi: 10.1103/PhysRevB.39.4828. → pp. 1 and 43 [2] J. Sinova and I. Žutić. New moves of the spintronics tango. Nat. Mater., 11(5):368–371, 2012. doi: 10.1038/nmat3304. → p. 1 [3] E. I. Rashba. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem. Phys. Rev. B, 62:R16267–R16270, 2000. doi: 10.1103/PhysRevB.62.R16267. → p. 1 [4] R. C. Sousa and I. L. Prejbeanu. Non-volatile magnetic random access memories (MRAM). Compt. Rend. Physique, 6(9):1013–1021, 2005. doi: 10.1016/j.crhy.2005.10.007. → p. 1 [5] S. Datta and B. Das. Electronic analog of the electro-optic modulator. Appl. Phys. Lett., 56(7):665–667, 1990. doi: 10.1063/1.102730. → p. 1 [6] I. Žutić, J. Fabian, and S. C. Erwin. Spin injection and detection in silicon. Phys. Rev. Lett., 97(2):026602, 2006. doi: 10.1103/PhysRevLett.97.026602. → p. 1 [7] R. Jansen, S. P. Dash, S. Sharma, and B. C. Min. Silicon spintronics with ferromagnetic tunnel devices. Semicond. Sci. Tech., 27(8):083001, 2012. doi: 10.1088/0268- 1242/27/8/083001. → pp. 1, 17, 85, 96, 105, 120, and 121 [8] M. Bibes and A. Barthélemy. Oxide Spintronics. IEEE Electron. Devices, 54(5):1003–1023, 2007. doi: 10.1109/TED.2007.894366. → p. 1 [9] F. Pulizzi. Oxidized spintronics. Nat. Mater., 11:564, 2012. doi: 10.1038/nmat3375. → p. 1 [10] J. S. Moodera, T. S. Santos, and T. Nagahama. The phenomena of spin-filter tunnelling. J. Phys-Condens. Mat., 19(16):165202, 2007. doi: 10.1088/0953-8984/19/16/165202. → pp. 1, 5, and 16 [11] G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Phys. Rev. B, 62(8):R4790–R4793, Aug 2000. doi: 10.1103/PhysRevB.62.R4790. → pp. 1 and 17 [12] S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mat.,3 (12):868–871, 2004. doi: 10.1038/nmat1257. → pp. 2 and 17 132
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Member of the Helmholtz Association
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Forschungszentrum Jülich GmbH Pete
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Zusammenfassung In dieser Doktorarb
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Contents 1. Introduction 1 2. Theor
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List of Figures 2.1. Phase diagram
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List of Figures xi 5.12. Resulting
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1. Introduction Smart and powerful
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3 In the thesis at ha
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2. Theoretical background . . . The
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2.1. The challenge of stabilizing s
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2.2. Electronic structure of EuO 9
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2.3. Magnetic properties of EuO 11
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2.4. Hard X-ray photoemission spect
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2.5. Magnetic circular dichroism in
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3. Experimental details Die Pläne
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3.1. Molecular beam epitaxy for oxi
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3.2. In situ characterization techn
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3.2. In situ characterization techn
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3.3. Experimental developments at t
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3.4. Ex situ characterization techn
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4. Results I: Single-crystalline ep
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59 Table 4.1.: Parameters for stoic
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4.1. Coherent growth: EuO on YSZ (1
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4.2. Lateral tensile strain: EuO on
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4.2. Lateral tensile strain: EuO on
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4.3. Lateral compressive strain: Eu
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Page 102 and 103: 5. Results II: The integration of t
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Page 140 and 141: 6. Conclusion and Outlook In the th
Page 142 and 143: 125 Outlook and perspectives In the
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Page 150 and 151: Bibliography 133 [13] S. S. P. Park
Page 152 and 153: Bibliography 135 [36] R. E. Dickers
Page 154 and 155: Bibliography 137 [65] R. Sutarto, S
Page 156 and 157: Bibliography 139 [91] P. Braun, M.
Page 158 and 159: Bibliography 141 [116] S. Hüfner.
Page 160 and 161: Bibliography 143 [144] R. Feder and
Page 162 and 163: Bibliography 145 [171] H. Miyazaki,
Page 164 and 165: Bibliography 147 [197] J. Qi, T. Ma
Page 166 and 167: Software and Internet Resources [21
Page 168 and 169: List of own publications 151 [10] R
Page 170 and 171: List of conference contributions 15
Page 172 and 173: Schriften des Forschungszentrums J
Page 175: Schlüsseltechnologien / Key Techno
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