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Magnetic Oxide Heterostructures: EuO on Cubic Oxides ... - JuSER

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46 3. Experimental details<br />

is moved through the ring (Fig. 3.10a), which induces a ring current. At the same time, the<br />

magnetic flux through the ring has to result in an integer multiple of Φ 0 . To fulfill this condition,<br />

the Josephson contact generates voltage oscillations with the time period of one ΔΦ 0<br />

(Fig. 3.10b, c). These voltage oscillations are detected by an RF coil and further processed (see<br />

Fig. 3.10).<br />

In practice, when ˜m(T ) denotes a measured magnetization, ˜m off the magnetization offset from<br />

zero when only a vanishing signal is expected (i. e. at T ≫ T C ), ˜m 0 = m(T →0) the measured<br />

saturation magnetization, and m theo the theoretically expected magnetization, then the magnetic<br />

moment m in μ B per magnetic formula unit can be expressed as<br />

m( ˜m(T )) = ˜m(T ) − ˜m off<br />

fμ B<br />

d = ˜m 0 − ˜m off<br />

fμ B m theo<br />

· Vcell<br />

A .<br />

· Vcell<br />

, or (3.6a)<br />

Ad<br />

(3.6b)<br />

Here, μ B denotes Bohr’s magneton, V cell = a 3 the volume of the cubic unit cell of the magnetic<br />

oxide, f the number of magnetic units per cubic cell, A the area and d the thickness of the<br />

magnetic thin film. Application of eq. (3.6a) with known geometry of the magnetic thin film<br />

reveals the specific magnetic moment m. Alternatively, by assuming an optimum sample<br />

with reference magnetization ˜m 0 = m theo , the thin film thickness d can be obtained from eq.<br />

(3.6b).<br />

In this work, a Quantum Design MPMS XL SQUID magnetometer is used to determine the<br />

magnetic properties of magnetic oxide thin films. The magnetization m(T ) is recorded as<br />

field warm curve at a minimum saturation field (usually ∼100 Oe), which we determined by<br />

hysteresis measurements for every thin film sample.<br />

3.4.2. X-ray diffraction methods (XRD, XRR, RSM)<br />

Based on the Bragg equation nλ =2d sinθ, X-ray diffraction (XRD) is a versatile technique<br />

which allows for the determination of structural properties such as the distance between<br />

crystal lattice planes, the thickness of layers, interface and surface roughness, texturing, and<br />

mosaicity, to mention the most common properties.<br />

In a simple Bragg-Brentano setup, in which one axis (2θ) is moved in order that the sample<br />

surface is always at ω = θ, a standard 2θ–ω diffractogram is obtained (Fig. 3.11). Here, only<br />

crystallites oriented parallel to the surface contribute to the diffraction peak. The observable<br />

peaks directly arise from the diffraction after Bragg’s law, and the exact peak position on the<br />

2θ scale allows to calculate the distance between diffracting planes (c: out-of-plane lattice<br />

parameter). The width of those peaks provides information about the orientation distribution<br />

of the crystallites, i. e. the mosaicity. Thus, already simple XRD diffractograms provide<br />

information about orientation and quality of thin films with good crystallinity. 135<br />

Using small angle scattering in the 2θ–ω setup, also known as X-ray reflectivity (XRR), a<br />

simulation of Kiessig fringes using the Parratt model 136 allows for the determination of the<br />

thickness of several layers from roughly two up to hundreds of nanometers. Moreover, from<br />

the damping of these fringes, the interface and surface roughness can be modeled.

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