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UNIVERSIT . . AT BONN Physikalisches Institut - Prof. Dr. Norbert ...

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2.4. Signal formation in direct converting pixel detectors 13<br />

In most cases the upper limit of the charge collection time for a detector of thickness D<br />

at a bias V can be estimated by the following formula.<br />

t e/h = D2<br />

µ e/h · V<br />

(2.13)<br />

The formula neglects sensor effects like the build-up of space charge, which can cause<br />

large deviations of the electric field from the externally applied one. Still, typical charge<br />

collection times in thin Si detectors (300 µm at 100 V) are on the order of 3 ns for electrons<br />

and 9 ns for holes. Thicker CdZnTe sensors typically have transit times on the order of<br />

several dozen nanoseconds.<br />

Parallel plate detector<br />

Fig. 2.8(a) shows the signal generation for a parallel plate detector under the assumptions<br />

of a constant electric field and an electron mobility, which is three times higher than<br />

the respective value for holes. In this particular detector geometry the weighting field is<br />

constant as indicated by the evenly spaced equipotential lines in Fig. 2.8(a). If a photon<br />

creates a number of electron hole pairs right in the middle of this detector, the resulting<br />

mirror charge Q(t) at the cathode has a quickly rising electron and a slowly rising hole<br />

component (see Fig 2.8(a) middle). The current flowing through the anode is shown in<br />

the bottom left plot in Fig 2.8(a) and it consists of a short-lived but strong electron<br />

a) b)<br />

+ +<br />

-<br />

I<br />

Q<br />

total<br />

e<br />

h<br />

Φ w<br />

-<br />

+<br />

Read<br />

out<br />

total<br />

e<br />

h<br />

t<br />

t<br />

Fig. 2.8: Weighting potential (top), induced mirror charge Q(t) (middle) and generated<br />

signal current i(t) (bottom) in a parallel plate detector (a) and a pixel detector (b). Both (a)<br />

and (b) assume a constant electric field inside the sensor. The three images in (a) illustrate<br />

the different duration and magnitude of the electron and hole components of the sensor<br />

signal, if the charge carriers are created in the middle between the detector electrodes. (b)<br />

shows the small pixel effect using the example of two different electron trajectories through<br />

the detector. In this case hole signals are neglected.<br />

-<br />

Q<br />

I<br />

B<br />

-<br />

-<br />

A<br />

Φ w<br />

A<br />

B<br />

A<br />

B<br />

Read<br />

out<br />

t<br />

t

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