CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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2B1242 SPRING 2006<br />
Hetero<strong>epitaxy</strong> (<strong>Si</strong>Ge on <strong>Si</strong>)<br />
Strained growth conditions, so-called pseudomorphic growth<br />
h c = critical thickness<br />
Unstrained � dislocation network which are adverse for device<br />
operation<br />
g p.106<br />
(Chang p.106)<br />
Mikael Östling <strong>KTH</strong><br />
Chan
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