CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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2B1242 SPRING 2006<br />
Float-zone method<br />
No crucible, crystal formed in Ar atmosphere<br />
Low oxygen content<br />
High-resistivity possible<br />
Neutron Transmutation Doping for extremely high-uniform<br />
resistivity<br />
Difficult to scale up in <strong>wafer</strong> diameter<br />
Mikael Östling <strong>KTH</strong>
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