CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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2B1242 SPRING 2006<br />
Surface reaction controlled regime:<br />
Deposition not (very) sensitive to geometrical arrangement of <strong>wafer</strong>s in reactor.<br />
However, low growth rates!<br />
Can be solved by reducing total pressure which affects D G and extends surfacereaction<br />
limited region to higher T:<br />
(Plummer Fig 9-13)<br />
Mikael Östling <strong>KTH</strong>
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