CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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- wafer
- epitaxy
- www.it.kth.se
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2B1242 SPRING 2006<br />
<strong>Si</strong> CVD sources and basic reactions for HT <strong>epitaxy</strong><br />
<strong>Si</strong>licontetrachloride: <strong>Si</strong>Cl 4 + H 2 ⇔ <strong>Si</strong> + 4HCl (~1200°C)<br />
Trichlorosilane (TCS): <strong>Si</strong>HCl 3 + H 2 ⇔ <strong>Si</strong> + 3HCl (~1150°C)<br />
Dichlorosilane (DCS): <strong>Si</strong>HCl 2 ⇔ <strong>Si</strong> + 2HCl (~1100°C)<br />
<strong>Si</strong>lane: <strong>Si</strong>H 4 ⇒ <strong>Si</strong> + 2H 2 (~1050°C)<br />
HT <strong>epitaxy</strong>: TCS or DCS<br />
LT <strong>epitaxy</strong>: DCS or silane<br />
(Sze VLSI Table I p. 65 )<br />
Mikael Östling <strong>KTH</strong>
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