CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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- wafer
- epitaxy
- www.it.kth.se
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2B1242 SPRING 2006<br />
<strong>Si</strong>licon Molecular Beam Epitaxy (MBE)<br />
Physical vapor deposition (PVD) method<br />
Typical for thin film research for <strong>Si</strong>Ge(C) <strong>epitaxy</strong> (not in production!)<br />
Vacuum evaporation with excellent thickness control<br />
Ultra-high vacuum<br />
Extremely low growth temperatures < 500°C<br />
In situ analysis of growing film<br />
As and, in particular, Ph dopants difficult. Often Sb for n+<br />
(Sze VLSI Fig 23 p.80 )<br />
Mikael Östling <strong>KTH</strong>
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