CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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2B1242 SPRING 2006<br />
Gettering<br />
Capture defects at locations far away from the device region.<br />
Damaged region will act as "sink" for unwanted elements.<br />
(Plummer Fig 4-7 p 162)<br />
Mikael Östling <strong>KTH</strong>
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