CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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- wafer
- epitaxy
- www.it.kth.se
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2B1242 SPRING 2006<br />
<strong>Si</strong> epi-growth rate for Cl-based chemistry<br />
Either deposition or etching depending on T, P or concentration (mole<br />
Fraction)<br />
Reaction is complex, e.g. <strong>Si</strong>Cl 4 :<br />
<strong>Si</strong>Cl 4 + H 2 ⇔ <strong>Si</strong>HCl 3 + HCl <strong>Si</strong>HCl 3 ⇔ <strong>Si</strong>Cl 2 + HCl<br />
<strong>Si</strong>HCl 3 + H 2 ⇔ <strong>Si</strong>H 2 Cl 2 + HCl <strong>Si</strong>Cl 2 + H 2 ⇔ <strong>Si</strong> + 2HCl<br />
<strong>Si</strong>H 2 Cl 2 ⇔ <strong>Si</strong>Cl 2 + H 2<br />
Mikael Östling <strong>KTH</strong>
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