CH1-silicon wafer & Si epitaxy - KTH

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2B1242 SPRING 2006 Silicon wafer fabrication Mikael Östling KTH Mag.
2B1242 SPRING 2006 Wafer fabrication Starting material: Electronically-grade Si (EGS) with contamination below ppb level Czochralski method Mikael Östling KTH
Page 1: Lecture 1 Wafer fabrication and Sil
Page 5 and 6: 2B1242 SPRING 2006 Float-zone metho
Page 7 and 8: 2B1242 SPRING 2006 Oxygen in CZ- Si
Page 9 and 10: 2B1242 SPRING 2006 Gettering Captur
Page 11 and 12: 2B1242 SPRING 2006 Silicon epitaxy
Page 13 and 14: 2B1242 SPRING 2006 Silicon epitaxy
Page 15 and 16: 2B1242 SPRING 2006 Heteroepitaxy (S
Page 17 and 18: 2B1242 SPRING 2006 Basic Si CVD typ
Page 19 and 20: 2B1242 SPRING 2006 Si CVD sources a
Page 21 and 22: 2B1242 SPRING 2006 Consequences: (P
Page 23 and 24: 2B1242 SPRING 2006 Surface reaction
Page 25 and 26: 2B1242 SPRING 2006 Reversible react
Page 27 and 28: 2B1242 SPRING 2006 Autodoping Light
Page 29 and 30: 2B1242 SPRING 2006 Epi thin film ch
Page 31 and 32: 2B1242 SPRING 2006 Example of batch
Page 33 and 34: 2B1242 SPRING 2006 UHVCVD LT non-se
Page 35 and 36: 2B1242 SPRING 2006 Silicon Molecula
Page 37 and 38: 2B1242 SPRING 2006 LT epitaxy: SiGe
Page 39 and 40: 2B1242 SPRING 2006 Si SEG Conventio
Page 41 and 42: 2B1242 SPRING 2006 Advanced LT epit

CH1-silicon wafer & Si epitaxy - KTH

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