CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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- wafer
- epitaxy
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2B1242 SPRING 2006<br />
Basic <strong>Si</strong> CVD types (both batch and single-<strong>wafer</strong> rectors)<br />
APCVD (atmospheric pressure CVD)<br />
Only for HT <strong>epitaxy</strong> (e.g. p-<strong>epitaxy</strong> on p+ bulk)<br />
LPCVD (low-pressure CVD)<br />
Deposition around 10-100 torr, e.g. for n+ HT <strong>epitaxy</strong>,<br />
LT <strong>Si</strong>Ge <strong>epitaxy</strong> or SEG<br />
UHVCVD (ultra-high vacuum CVD)<br />
Deposition around 10-3 torr. For LT <strong>Si</strong>Ge <strong>epitaxy</strong><br />
(NSEG)<br />
Mikael Östling <strong>KTH</strong>
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