CH1-silicon wafer & Si epitaxy - KTH

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2B1242 SPRING 2006 The Grove model for epitaxial growth Growth limited by mass-transfer or surface reaction F F 1 2 = = h k g s ( C C s g − C h g = vapor mass transfer coefficient k s = surface reaction constant s ) Assume: Steady state: F 1 =F 2 = F Growth rate n = F/C a where C a = number of Si atoms/cm 3 (Sze Fig. 20 p 324) C g = yC t where y is the mole fraction and C t is the total number of gas molec/cm 3 � kshg v = k + h ⎞ ⎟ y ⎠ k s small � Surface reaction controlled h g small � Mass-transport controlled s g ⎛ Ct ⎜ ⎝ Ca C t k s y C ⎟ a ⎟ ⎛ ⎞ ⎜ ⎝ ⎠ Mikael Östling KTH v v ≅ ≅ h g ⎛ ⎜ ⎝ C C t a ⎞ ⎟ ⎠ y
2B1242 SPRING 2006 Consequences: (Plummer Fig 9-7) (Sze Fig 21 p. 326 ) Mikael Östling KTH
Page 1 and 2: Lecture 1 Wafer fabrication and Sil
Page 3 and 4: 2B1242 SPRING 2006 Wafer fabricatio
Page 5 and 6: 2B1242 SPRING 2006 Float-zone metho
Page 7 and 8: 2B1242 SPRING 2006 Oxygen in CZ- Si
Page 9 and 10: 2B1242 SPRING 2006 Gettering Captur
Page 11 and 12: 2B1242 SPRING 2006 Silicon epitaxy
Page 13 and 14: 2B1242 SPRING 2006 Silicon epitaxy
Page 15 and 16: 2B1242 SPRING 2006 Heteroepitaxy (S
Page 17 and 18: 2B1242 SPRING 2006 Basic Si CVD typ
Page 19: 2B1242 SPRING 2006 Si CVD sources a
Page 23 and 24: 2B1242 SPRING 2006 Surface reaction
Page 25 and 26: 2B1242 SPRING 2006 Reversible react
Page 27 and 28: 2B1242 SPRING 2006 Autodoping Light
Page 29 and 30: 2B1242 SPRING 2006 Epi thin film ch
Page 31 and 32: 2B1242 SPRING 2006 Example of batch
Page 33 and 34: 2B1242 SPRING 2006 UHVCVD LT non-se
Page 35 and 36: 2B1242 SPRING 2006 Silicon Molecula
Page 37 and 38: 2B1242 SPRING 2006 LT epitaxy: SiGe
Page 39 and 40: 2B1242 SPRING 2006 Si SEG Conventio
Page 41 and 42: 2B1242 SPRING 2006 Advanced LT epit

CH1-silicon wafer & Si epitaxy - KTH

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