CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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- wafer
- epitaxy
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2B1242 SPRING 2006<br />
Oxygen in CZ- <strong>Si</strong><br />
Oxygen dissolves from quartz crucible during CZ growth<br />
~10 18 cm -3 !<br />
Three effects during circuit processing :<br />
+ <strong>Si</strong>-O-<strong>Si</strong> bindings resulting in higher mechanical strength<br />
- Oxygen donors (<strong>Si</strong>O 4). 10 16 cm -3 form at 400-500 ° C<br />
- Bulk precipitation (<strong>Si</strong>O 2) (but can be controlled by gettering)<br />
Mikael Östling <strong>KTH</strong>
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