CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
CH1-silicon wafer & Si epitaxy - KTH
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2B1242 SPRING 2006<br />
UHVCVD<br />
LT non-selective epi method developed by IBM specially for <strong>Si</strong>Ge<br />
Batch method at very low temperature 500-600°C<br />
(Chang Fig 22 p 128 )<br />
Mikael Östling <strong>KTH</strong>
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